A STUDY OF LOW-DEMENTIONAL SURFACE PHASE FORMATION AND EPITAXY ON SILLICN SURFACE BY VERY LOW ENERGY ION BEAM DEPOSITION.

极低能离子束沉积硅表面低维表面相的形成和外延研究。

• 批准号: 12650033
• 负责人: SHOJI Fumiya
• 金额: $ 1.86万
• 依托单位: KYUSHU KYOTITSU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650033/
• 关键词: SURFACE AND INTERFACE; EPITAXY; ION BEAM DEPOSITION; ION SCATTERING; LOW ENERGY ELECTRON DIFFRACTION; Ag ION BEAM; Bi ION BEAM; ION SURFACE INTERACTION; ION SOURCE; イオン蒸着; エピタキシー; 表面構造; 薄膜成長; イオンビーム

Ag ion beam deposition has been performed on Si(100) and Si(111) surfaces at incident ion energy range of 10eV to 500eV. Under the fixed ion dose quantity of 0.5ML, the surface coverage was the highest in the ion energy of 100eV, which was due to the two dimensional distribution of the deposited atoms. In the ion energy, which was lower than 100eV, deposition atoms agglomerated to form the three dimensional islands. Other side, the ion was incorporated into the solid surface for the energy higher than 100eV. As a result of the LEED observation, the diffraction spots which reflected the surface periodic structure disappeared just after the ion deposition. However, clear diffraction spots appeared when the deposition surface was annealed at the temperature of about 570K. The structures which appeared after the annealing procedure were **3x**3 structure for Si(111) and 1x1 structure for Si(100).In the period of this research project, we cleared the effect of momentum of the ion on surface phase formation processes for the ion silicon surface systems, Ag ion- Si (100), (111) and Bi ion-Si (100), (111).

在Si（100）和Si（111）表面上进行了Ag离子束沉积，入射离子能量范围为10 ~ 500 eV。在0.5ML的固定剂量下，离子能量为100 eV时表面覆盖率最高，这是由于沉积原子的二维分布所致。在离子能量低于100 eV时，沉积原子聚集形成三维岛状结构。另一方面，离子被并入到固体表面的能量高于100 eV。作为LEED观察的结果，反映表面周期性结构的衍射斑点在离子沉积之后立即消失。而在570 K左右退火后，薄膜表面出现了清晰的衍射斑点。在本课题研究期间，我们研究了离子动量对Ag离子- Si（100），（111）和Bi离子-Si（100），（111）离子硅表面系统表面相形成过程的影响。

项目成果

M.Naitoh, M.Takei, S.Nishigaki, N.Oishi and F.Shoji: "Structure of Bi-Dimer Linear Chains on a Si(100) Surface : A Acanning Tunneling Microscopy Study"Jpn. J. Appl. Phys.. 39. 2793-2794 (2000)

M.Naitoh、M.Takei、S.Nishigaki、N.Oishi 和 F.Shoji：“Si(100) 表面上双二聚体线性链的结构：扫描隧道显微镜研究”Jpn。

M.Naitoh, M.Takei, S.Nishigaki N.Oishi, F.Shoji: "Scanning tunneling microscopy observabtion of Bi-induced surtace stwctures on the Si(100) Surtace"Surtace Science. 482-485. 1440-1444 (2001)

M.Naitoh、M.Takei、S.Nishigaki N.Oishi、F.Shoji：“Si(100) 表面上 Bi 诱导表面结构的扫描隧道显微镜观察”表面科学。

M.Naitoh, M.Takei, S.Nishigaki, N.Oishi, F.Shoji: "Scanning tunneling microssopg observation of Bi-induced surtace stwctures on the Si(100)surtace"Surtace Science. 482-485. 1440-1444 (2001)

M.Naitoh、M.Takei、S.Nishigaki、N.Oishi、F.Shoji：“Si(100) 表面上 Bi 诱导表面结构的扫描隧道显微观察”表面科学。

F.Shoji: "Nucl. Instrum.Methods in Phys. Res. B"164-165. 671-676 (2000)

F.Shoji：“物理研究 B 中的核仪器方法”164-165。

M.Naitoh,F.Shoji 他3名: "Structure of Bi-dimer linear chains on a Si(100) surface : A scanning tunneling microscopy study"Jpn.J.Appl.Phys.. 39. 2793-2794 (2000)

M.Naitoh、F.Shoji 等 3 人：“Si(100) 表面双二聚体线性链的结构：扫描隧道显微镜研究”Jpn.J.Appl.Phys.. 39. 2793-2794 (2000)