DEVELOPMENT OF AN IMAGING TECHNIQUE OF MAGNETIC FLUX PENETRATING THROUGH SUPERCONDUCTING FILM
磁通量穿透超导薄膜成像技术的开发
基本信息
- 批准号:07650518
- 负责人:
- 金额:$ 1.34万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:1995
- 资助国家:日本
- 起止时间:1995 至 1997
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The main theme of the present research is to observe the movement of magnetic flux that is penetrating through the type-II super-conducting film. We proposed to use the type-I magnetic contrast found in the scanning electron microscope (SEM) for observing the flux. It may be possible to find the causes of the pinning effect of the flux which influences the super-conductivity, such as the material, the structure, the imperfection in the specimen. Since the SEM has a spatial resolution of nm scale, this system may be used to probe the origin of the magnetic characteristics of the specimen.In the present research, first, we assume a simple magnetic structure of the material. Then, the magnetic flux and the electric field, which is produced by the electron detector are calculated. The electron trajectories are calculated in this electromagnetic field, and the electron detection position distribution is obtained in three-dimension. By converting the movement of the distribution, the magnetic structure can be predicted.The temperature of the specimen stage made in the present research in the SEM reaches down to 30K and the super-conductivity is confirmed. However, the magnetic contrast in the present system has not been observed yet. It may be because of the angular distribution and the energy distribution of electrons emitted from the surfacde. They cover the characteristic variation in the contrast. The simulation shows some preferable conditions to improve the signal to the noise ratio, and at the same time to improve the sensitivity. In the preliminary comparison between the experiment and the calculation, that is to observe the magnetic flux using ordinary magnetic films, the validity of the simulation is confirmed.
本研究的主题是观察穿透II型超导薄膜的磁通量的运动。我们建议使用在扫描电子显微镜(SEM)中发现的I型磁衬度来观察磁通。从材料、结构、样品中的缺陷等方面可能找到影响超导性的磁通钉扎效应的原因。由于SEM具有纳米尺度的空间分辨率,该系统可用于探测样品磁特性的起源。在本研究中,首先,我们假设材料具有简单的磁结构。然后,计算了由电子探测器产生的磁通量和电场。计算了电子在该电磁场中的运动轨迹,得到了电子探测位置的三维分布。通过对磁场分布的运动进行换算,可以预测磁结构,本研究制作的样品台在扫描电镜中的温度达到30K,证实了超导性。然而,在本系统中的磁衬度尚未观察到。这可能与表面发射电子的角分布和能量分布有关。它们涵盖了对比度中的特征变化。仿真结果表明,在提高信噪比的同时,提高了灵敏度。通过实验与计算的初步对比,即用普通磁膜观测磁通量,验证了模拟的正确性。
项目成果
期刊论文数量(31)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
M.Kotera: "Evaluation of the Mott Polarimeter in the Electron Spin Polarization Scanning Electron Microscopy" Jpn.J.Appl.Phys. 35,12B. 6614-6619 (1996)
M.Kotera:“电子自旋偏振扫描电子显微镜中莫特旋光计的评估”Jpn.J.Appl.Phys。
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- 影响因子:0
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K.Tamuta: "Performance Analysis of the Mott Polarimeter" J.Vac.Soc.of Japan. 40,3. 173-176 (1997)
K.Tamuta:“莫特旋光计的性能分析”J.Vac.Soc.of Japan。
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- 影响因子:0
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小寺正敏: "Evaluation of the Mott Polarimeter in the Electron Spin Polarization Scanning Electron Microscopy" Jpn.J.Appl.Phys.35. 6614-6619 (1996)
Masatoshi Kodera:“电子自旋偏振扫描电子显微镜中莫特旋光计的评估”Jpn.J.Appl.Phys.35 (1996)。
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- 影响因子:0
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小寺正敏: "Performance Evaluation of the Mott polavineter in the Electron Spin polarization Scanning Electron Microscopy" Digest of Papers MicroProcess'96. 152-155 (1996)
Masatoshi Kodera:“电子自旋偏振扫描电子显微镜中莫特极化仪的性能评估”MicroProcess 论文摘要96 (1996)。
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- 影响因子:0
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小寺 正敏: "Motl電子スピン偏極検出器の性能解析" 真空. 40.3. 173-176 (1997)
Masatoshi Kodera:“Motl 电子自旋极化探测器的性能分析”真空 173-176 (1997)。
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KOTERA Masatoshi其他文献
KOTERA Masatoshi的其他文献
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{{ truncateString('KOTERA Masatoshi', 18)}}的其他基金
Multiscale analysis of charging phenomena to reduce the effects of charging in electron beam lithography
充电现象的多尺度分析,以减少电子束光刻中充电的影响
- 批准号:
16K06324 - 财政年份:2016
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of wide range-nanometer resolution-real time measurement system of charged up specimen irradiated by electron beam
电子束辐照带电样品宽范围纳米分辨率实时测量系统的研制
- 批准号:
22560026 - 财政年份:2010
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
A PRODUCTION OF AN ELECTROSTATIC SCANNING ELECTRON MICROSCOPE
静电扫描电子显微镜的研制
- 批准号:
03650361 - 财政年份:1991
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)