Development of wide range-nanometer resolution-real time measurement system of charged up specimen irradiated by electron beam

利用静电力显微镜系统成功地测量了电子束辐照带电绝缘体表面的电位分布。结果表明，在导电衬底上铺有绝缘膜的光掩膜上的电位分布随着加速电压和电子束电流的变化而变化很大。另一方面，我们建立了考虑样品内外电子行为的电子轨迹模拟，其结果与实验结果吻合较好。

Electrostatic force microscope system has been successfully completed to measure the potential distribution of a charged up insulator surface by electron beam irradiation. It is shown that the potential distribution built on a photo-mask, where an insulating film is on a conductive substrate, varies largely with the accelerating voltage and the current of the electron beam. On the other hand, we develop an electron trajectory simulation considering the behavior of electrons inside and outside of the specimen, and the result agrees well with the experimental result.