UP-CONVERTED PHOTOLUMINESCENCE IN ORDERED AlGaInP ALLOY SEMICONDUCTOR SESTEMS AND ITS PRESSURE EFFECTS

有序 AlGaInP 合金半导体系统中的上转换光致发光及其压力效应

• 批准号: 09640397
• 负责人: KOBAYASHI Toshihiko
• 金额: $ 1.92万
• 依托单位: KOBE UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09640397/
• 关键词: ordered structure; GaInP; AlGaInP; heterojunction; photoluminescence; pressure; 混晶半導体

Ga_<0.5>In_<0.5>P grown on GaAs substrates under appropriate conditions is known to form naturally ordered superlattices with the CuPt structure. Although the interface plays an important role in the formation of the ordered structure, little is known about it due to difficulties in probing the heterointerface in as grown samples. We have observed upconversion of photoluminescence (PL) from GaInP at -1.9 eV in several partially ordered GaInP epilayers grown on GaAs and in GaAs/GaInP quantum well structures when the excitation photon energy (1.58 eV) is sufficiently below that of GaInP but is slightly above the bandgap of GaAs near 1.5 eV.While the spectral" positions are almost close to those of the normal PL excited by photons with energy of 2.54 eV, some of their spectral shapes are quite different from those of normal PL spectra. Since this upconversion process occurs in the vicinity of the interface, it can be used to probe properties of the heterojunction such as the band offsets and diffusion of carriers across the interface. A two-photon absorption mechanism at the type II GaAs/partially ordered GaInP interface seems to explain our results. Also, we have studied the time-resolved photoluminescence in GaAs/partially ordered GaInP quantum wells, which is an alternative way of probing the interfaces. Some of these structures contain thin (- 2 nm) layers of GaP between the GaInP and GaAs layers. A so-called "deep emission" band at -1.46 eV is dominated. This deep emission is closely related to the order-disorder phenomenon observed previously for GaInP.A model for spatially indirect recombinations of electron and holes at the interface without GaP layer is proposed to explain our results, in which the conduction band alignment at the GaAs/partially ordered GaInP is of type II.

在合适的生长条件下，生长在GaAs衬底上的Ga0.5&gt；In0.5&gt；P可以形成具有CuPT结构的自然有序超晶格。尽管界面在有序结构的形成中起着重要的作用，但由于在As生长样品中探测异质界面的困难，人们对此知之甚少。当激发光子能量(1.58 eV)低于GaInP的激发能，但略高于1.5 eV附近的GaInP禁带时，我们观察到GaInP在-1.9 eV处的光致发光(PL)在几个部分有序的GaInP外延层和在GaInP/GaInP量子阱结构中的上转换。虽然在2.54 eV的光子激发下，它们的光谱位置几乎接近正常光致发光的位置，但它们的一些光谱形状与正常光致发光光谱有很大的不同。由于这种上转换过程发生在界面附近，它可以用来探测异质结的性质，如能带偏移和载流子在界面上的扩散。在第二类GaAs/偏序GaInP界面上的双光子吸收机制似乎解释了我们的结果。此外，我们还研究了作为探测界面的另一种方法，在GaAs/部分有序GaInP量子阱中的时间分辨光致发光。其中一些结构在GaInP和GaAs层之间包含薄层(-2 nm)间隙。在-1.46 eV的所谓的“深发射”带占主导地位。这种深发射与以前观察到的GaInP的有序-无序现象密切相关。为了解释我们的结果，提出了一个无间隙层界面处电子和空穴空间间接复合的模型，在该模型中，GaInP/部分有序GaInP的导带排列是II型的。

项目成果

T.Kobayashi et al.: "High-Pressure Study of Deep Emission Band at GaInP/GaAs Interface" The Review of High Pressure Science and Technology. 7. 715-717 (1998)

T.Kobayashi 等人：“GaInP/GaAs 界面深发射带的高压研究”高压科学与技术评论。

T.Kobayashi: "High-Pressure Study of Deep Emission Band at GaInP/GaAS Interface" The Review of High Pressure Science and Technology. 7. 715-717 (1998)

T.Kobayashi：“GaInP/GaAS 界面深发射带的高压研究”高压科学与技术评论。

N.Tsuji: "Pressure Dependence of Time-Resolved Photoluminescence in Ordered Ga_<0.5> In_<0.5> P" The Review of High Pressure Science and Technology. 7. 763-765 (1998)

N.Tsuji：“有序 Ga_<0.5> In_<0.5> P 中时间分辨光致发光的压力依赖性”高压科学与技术评论。

T.Kobayashi et al.: "Time-Resolved Photoluminescence Study of GaAs/Ordered GaInP Interface under High Pressure" physica status solidi (b). 211. 247-253 (1999)

T.Kobayashi 等人：“高压下 GaAs/有序 GaInP 界面的时间分辨光致发光研究”物理状态固体 (b)。

T.Kobayashi et al.: "High-Pressure Study of Deep Emission Band at GaInP/GaAs Interface" The Review of High Pressure Science and Technology. 7(in press). (1998)

T.Kobayashi 等人：“GaInP/GaAs 界面深发射带的高压研究”高压科学与技术评论。