Growth of Dislocation-Free Single Crystal Silicon Sheet

无位错单晶硅片的生长

• 批准号: 08455076
• 负责人: YASUTAKE Kiyoshi
• 金额: $ 1.73万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455076/
• 关键词: dislocation-free single crystal Si; Si sheet; liquid phase crystal growth; 無転移単結晶Si

The aim of this study is to develop a growth method of dislocation-free single crystal Si sheet. Basically, a method of liquid phase crystal growth (LPCG) from Si-containing solvent has been used. To obtain sheet-shaped crystal, we studied longitudinal growth in shaping slits and graphoepitaxy on grooved glass substrates.(1) A dislocation-free single crystal Si of 12 x 5 x 3 mn^3 has been grown by the LPCG method. The surface orientation of the crystal was (111) and the resistivity was 10 - 20 OMEGAcm. By this result, we could show the possibility of the LPCG method to achieve continuous growth of dislocation-free single crystal Si sheet.(2) Th principle, it is possible to grow dislocation-free single crystal Si sheet that floats on the Sn solvent during the process (floating method). To grow Si sheets by the floating method, detailed simulation study is necessary on the Si supersaturation due to the temperature distribution taking the buoyancy effects into account.(3) The longitudinal … More LPCG method with shaping slits is the most promising method for practical production line. In this method, the solution should be introduced into the shaping slits with the assistance of the applied pressure. The temperature gradient along the shaping slits should be rigorously controlled. At the first stage, this method is applicable for solar cells. On the application for the LSI devices, more detailed electrical characterization is necessary.(4) The graphoepitaxy on grooved glass substrates may be effective for LSI application, because the thinner Si layer than 0.1 mum is easily grown by the LPCG method . However, the grooving technique to obtain periodical pattern with atomic order is necessary to be developed, which can not be achieved by the present X-ray lithography technique.(5) In order to grow large area Si sheet, it is necessary to develop a large-scale equipment, which makes it possible to feed Si material continuously, to maintain the constant solvent temperature, and to precisely control the temperature around the crystal growth region. Less

本研究的目的是开发一种无位错单晶硅片的生长方法。基本上采用的是从含硅溶剂中进行液晶生长的方法。为了获得片状晶体，我们研究了在凹槽玻璃衬底上的纵向生长和垂直外延。(1)用LPCG方法生长了无位错的12×5×3Mn^3单晶。晶体表面取向为(111)，电阻率为10-20OmeGAcm。通过这一结果，我们可以证明LPCG方法实现无位错单晶硅片连续生长的可能性。(2)Th原理，在此过程中(浮动法)可以生长出漂浮在锡溶剂上的无位错单晶硅片。为了用浮法生长硅片，需要对考虑浮力影响的温度分布引起的硅片过饱和度进行详细的模拟研究。(3)纵向…多带成形缝的LPCG方法是最有希望应用于实际生产线的方法。在这种方法中，应在外加压力的帮助下将解引入成形缝中。应严格控制成形缝上的温度梯度。在第一阶段，该方法适用于太阳能电池。对于LSI器件的应用，需要更详细的电学表征。(4)由于LPCG方法很容易生长出比0.1um更薄的硅层，所以在刻槽玻璃衬底上进行梯度外延可能是有效的。然而，需要发展刻槽技术来获得原子有序的周期性图形，这是目前的X射线光刻技术所不能实现的。(5)为了生长大面积的硅片，有必要开发一种大规模的设备，使连续输送硅材料，保持恒定的溶剂温度，以及精确控制晶体生长区域周围的温度成为可能。较少