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Development of Anisotropic Dry Etching Process Using Laser Cooling Method

利用激光冷却方法开发各向异性干蚀刻工艺

基本信息

批准号：
09555046
负责人：
YASUTAKE Kiyoshi
金额：
$ 4.99万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09555046/
关键词：
anisotropic dry etching NFィイD23ィエD2 plasma neutral F radical beam laser collimation laser cooling metastable lifetime ECR plasma stimulated light force 半導体ドライエッチング Fラジカルビーム ECRラジカル源フッ素ラジカル

项目摘要

A new method of anisotoropic dry etching using a laser-collimated neutral F radical beam has been proposed. Using this method, no damage nor pattern distortion by the charged particles is expected in the miniaturized Si devices.(1) For generation of F radicals, we made 13.56 MHz plasma source to decompose NFィイD23ィエD2 gas. NFィイD23ィエD2 is the best matching for the present purpose judged from the view points of radical generation efficiency, easy handling, and no decomposition products.(2) The wavelength for the closed laser cooling cycle was determined to be 685.793nm by the precision emission spectrum analysis of NFィイD23ィエD2 plasma.(3) The lower state of laser cooling cycle (3pィイD14ィエD1DィイD30(/)7/2ィエD3【tautomer】3sィイD14ィエD1PィイD25/2ィエD2) is the metastable state. Therefore, the metastable lifetime τィイD2FィエD2 of 3sィイD14ィエD1PィイD25/2ィエD2 state is the key factor to accomplish successful laser collimation of F radical beam using spontaneous light force. So far, however, no reliable report on τィイD2FィエD2 has been published. We have made a new approach to measure τィイD2FィエD2 of 3sィイD14ィエD1PィイD25/2ィエD2 state to get τィイD2FィエD2=3.7±0.5μs.(4) Based on the short lifetime of 3sィイD14ィエD1PィイD25/2ィエD2 state, it is not a practical way to collimate F radical beam using spontaneous light force. However, the powerful laser collimation method using stimulated light force can be used to collimate F radical beam.(5) We have developed a highly efficient ECR (electron cyclotron resonance) microwave plasma source of F radical beam. Compared to the RF radical source, 20-fold increase of the Si etching rate and 80-fold increase of the 685.793nm emission intensity of F radicals have been achieved by the developed ECR source.(6) We measured the Si etching rates with and without the ion retarding bias voltage applied to the Si wafer. It was concluded that a practical etching rate by neutral F radicals would be obtainable for semiconductor manufacturing process.

提出了一种利用激光准直中性F自由基光束进行各向异性干法刻蚀的新方法。使用这种方法，小型化的硅器件不会受到带电粒子的损伤，也不会出现图案失真。(1)为了产生F自由基，我们制作了13.56兆赫兹等离子体源来分解NFィイD23ィエD2气体。从自由基产生效率、易操作和无分解产物的角度来看，(3pィイD14ィエD1DィイD30(/)7/2ィエD3【tautomer】3sィイD14ィエD1PィイD25/2ィエD2)ィイD23ィエD2是最适合目前用途的。(2)通过对NFィイD23ィエD2等离子体的精确发射光谱分析，确定闭合激光冷却循环的波长为685.793 nm。(3)激光冷却循环的低状态NfィイD23ィエD2为亚稳态。因此，3SτィイD14ィエD1PィエD25/2 D2态的亚稳态寿命是利用自发光力实现F自由基光束激光准直的关键。然而，到目前为止，还没有关于τィイD2FィエD2的可靠报告发表。我们提出了一种新的测量τィイD2FィエD2 of 3sィイD14ィエD1PィイD25/2ィエD2态的方法，得到τィイD2FィエD2=3.7±0.5μS。(4)基于3SィイD14ィエD1PィイD25/2ィエD2态寿命短，用自发光力准直F自由基光束是不可行的。然而，利用受激光力的强大激光准直方法可以用来准直F自由基光束。(5)我们研制了一种高效的电子回旋共振微波等离子体源。与射频自由基源相比，所研制的ECR源对硅的刻蚀速率提高了20倍，F自由基685.793 nm的发射强度提高了80倍。(6)测量了施加在硅片上的离子延迟偏置电压对硅片的刻蚀速率。得出的结论是，在半导体制造工艺中，中性F自由基的刻蚀速率是可以获得的。