Development of Ceramic Type Thin-Film Electroluminescent Devices High-Luminance Flat Panel Lamp

陶瓷型薄膜电致发光器件高亮度平板灯的研制

基本信息

  • 批准号:
    08555014
  • 负责人:
  • 金额:
    $ 3.65万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1996
  • 资助国家:
    日本
  • 起止时间:
    1996 至 1997
  • 项目状态:
    已结题

项目摘要

Large area thin-film electroluminescent (TFEL) devices with high luminance as well as high luminous efficiency have been developed not only as Flat panel displays but also as flat panel lamps. The large area BaTiO_3 ceramic sheet was formed using a doctor blade method. Smooth surface BaTiO_3 ceramic sheets with a thickness of 0.14-0.4mm were obtained without the use of grinding or polishing processes. The ZnS : Mn thin-film emitting layr was deposited onto the ceramic sheets by a low-pressure chemical vapor deposition (MOCVD) technique. To obtain ZnS : Mn TFEL devices which exhibit a high luminance as well as high-luminous efficiency, both the dielectric properties of BaTiO_3 ceramic sheet as the insulating layr and postannealing conditions of ZnS : Mn thin film as the emitting layr were optimized.High-liminous efficiency ZnS : Mn TFEL devices using a BaTiO_3 insulating ceramic sheet prepared by the doctor blade method without the use of grinding or polishing processes were developed. Luminances above 16000,5800 and 750cd/m^2 and maximum luminous efficiencies of 12.5,11 and 61m/W for orange emission were obtained in a ZnS : Mn TFEL device using a ceramic sheet with a thickness of about 0.4mm, when driven at 5,1kHz and 60Hz, respectively. In addition, a luminous efficiency of 11.5lm/W and a luminance of 9500 cd/m^2 were obtained in a ZnS : Mn TFEL device driven by a 5kHz sinusoidal wave voltage of 200 V.The luminous efficiencies obtained in TFEL devices using an insulating ceramic sheet were higher than those reported in conventional double-insulating-layr-type TFEL devices. High luminances for green or red emisssion were obtained in TFEL devices with a Ga_2O_3 : Mn or a Ga_2Oa_3 : Cr thin-film emitting
具有高亮度和高发光效率的大面积薄膜电致发光(TFEL)器件不仅可以用作平板显示器,还可以用作平板灯。采用刮刀法制备了大面积BaTiO_3陶瓷片。在不经研磨或抛光的情况下,获得了厚度为0.14-0.4mm的表面光滑的BaTiO_3陶瓷片。采用低压化学气相沉积(MOCVD)技术在陶瓷片上沉积了ZnS:Mn薄膜发射层。为了获得ZnS:为了获得高亮度、高发光效率的MnTFEL器件,优化了BaTiO_3陶瓷片的介电性能和ZnS:Mn薄膜的退火工艺,研制了高发光效率的ZnS:MnTFEL器件。采用厚度为0.4mm的陶瓷片制作的ZnS:Mn薄膜电致发光器件,在5、1 kHz和60 Hz驱动下,橙子发光的亮度分别达到16000、5800和750 cd/m2,最大发光效率分别为12.5、11和61 m/W。在5 kHz正弦波电压为200 V的驱动下,ZnS:Mn薄膜电致发光器件的发光效率为11.5lm/W,亮度为9500 cd/m^2。使用绝缘陶瓷片的薄膜电致发光器件的发光效率高于传统的双绝缘层薄膜电致发光器件。用Ga_2O_3:Mn或Ga_2O_3:Cr薄膜作发光材料的薄膜电致发光器件获得了高亮度的绿色或红色发光

项目成果

期刊论文数量(7)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Minami, T.Kakumu, K.Shimokawa and S.Takata: ""New transparent conducting ZnO-In_2O_3-SnO_2 thin films prepared by magnetron sputtering"" Thin Solid Films. (in press).
T.Minami、T.Kakumu、K.Shimokawa 和 S.Takata:“通过磁控溅射制备新型透明导电 ZnO-In_2O_3-SnO_2 薄膜””固体薄膜。
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    0
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T.Minami, Y.Takeda, T.Kakumu, S.Takata and I.Fukuda: ""Preparation of highly transparent and conducting Ga_2O_3-In_2O_3 films by direct current magnetron sputtering"" Journal of Vacuum Science and Technology A. 15(3). 958-962 (1997)
T.Minami、Y.Takeda、T.Kakumu、S.Takata 和 I.Fukuda:“通过直流磁控溅射制备高透明导电 Ga_2O_3-In_2O_3 薄膜””真空科学与技术杂志 A. 15(3)
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    0
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T.Minami, H.Kumagai, T.Kakumu, S.Takata and M.Ishii: ""Highly transparent and conductive ZnO-In_2O_3 thin films prepared by atmospheric pressure chemical vapor deposition"" Journal of Vacuum Science and Technology A. 15(3). 1069-1073 (1997)
T.Minami、H.Kumagai、T.Kakumu、S.Takata 和 M.Ishii:“通过常压化学气相沉积制备高透明导电的 ZnO-In_2O_3 薄膜”” Journal of Vacuum Science and Technology A. 15(
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    0
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  • 通讯作者:
T.Miyata, T.Yamamoto, H.Nakamura, M.Ishii, T.Minami: "High-luminous efficiency ZnS : Mn TFEL Devices using Insulating Ceramic Sheets" Proc.Fourth International Display Workshops. 597-600 (1997)
T.Miyata、T.Yamamoto、H.Nakamura、M.Ishii、T.Minami:“使用绝缘陶瓷片的高发光效率 ZnS : Mn TFEL 器件”Proc.第四届国际显示研讨会。
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    0
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T.Minami, Y.Takada, S.Takata and T.Kakumu: ""Preparation of transparent conducting In_4Sn_3O_<12> thin films by DC magnetron sputtering"" Thin Solid Films. 308-309. 13-18 (1997)
T.Minami、Y.Takada、S.Takata 和 T.Kakumu:“通过直流磁控溅射制备透明导电 In_4Sn_3O_<12> 薄膜””固体薄膜。
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ISHII Makoto其他文献

ISHII Makoto的其他文献

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{{ truncateString('ISHII Makoto', 18)}}的其他基金

Development of a direct induction method for human lung epithelial cells by reprogramming and elucidation of its molecular basis
通过重编程开发人肺上皮细胞直接诱导方法并阐明其分子基础
  • 批准号:
    18H02821
  • 财政年份:
    2018
  • 资助金额:
    $ 3.65万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A rearch study on the security of life and the development of the self-employed sector in local areas
地方群众生命保障与个体工商户发展调查研究
  • 批准号:
    16K04072
  • 财政年份:
    2016
  • 资助金额:
    $ 3.65万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Elucidation of epigenetic gene regulation mechanism for establishment of new therapeutic strategies for severe infectious diseases
阐明表观遗传基因调控机制,建立重症传染病治疗新策略
  • 批准号:
    15K09580
  • 财政年份:
    2015
  • 资助金额:
    $ 3.65万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Epigenetic gene regulation in sepsis
脓毒症的表观遗传基因调控
  • 批准号:
    22790956
  • 财政年份:
    2010
  • 资助金额:
    $ 3.65万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
A comparative study of young workers' occupation and marriage pathways during an era of declining birthrate in local areas across Japan.
日本各地少子化时期青年劳动者的职业和婚姻路径的比较研究
  • 批准号:
    20330106
  • 财政年份:
    2008
  • 资助金额:
    $ 3.65万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Reseach on employment stability and autonomy of professional-type white-collar and the structure of division and cooperation of labor
职业型白领就业稳定性、自主性及分工合作结构研究
  • 批准号:
    17530217
  • 财政年份:
    2005
  • 资助金额:
    $ 3.65万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
A Study of High Quality Beta-Irondisilicides formed on (001) Silicon Substrates by a Vacuum Deposition Method and the Fabrication of Light Emitting Diodes
(001)硅基片真空沉积法制备高质量β-二硅化铁及发光二极管的研究
  • 批准号:
    16560017
  • 财政年份:
    2004
  • 资助金额:
    $ 3.65万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
A STUDY OF NEW SOURCE MATERIAL FOR GROWING InGaN SYSTEM IN LOW PRESSURE ORGANOMETALLIC CHEMICAL VAPOR PHASE DEPOSITION APPARATUS
低压有机金属化学气相沉积装置中生长InGaN系统新原料的研究
  • 批准号:
    10650022
  • 财政年份:
    1998
  • 资助金额:
    $ 3.65万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
A STUDY OF NEW SOURCE MATERIAL FOR GROWING ALGaN SYSTEM IN LOW PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION APPARATUS
低压有机金属化学气相沉积装置中生长AlGaN系新原料的研究
  • 批准号:
    05650020
  • 财政年份:
    1993
  • 资助金额:
    $ 3.65万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
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