A Study of High Quality Beta-Irondisilicides formed on (001) Silicon Substrates by a Vacuum Deposition Method and the Fabrication of Light Emitting Diodes

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Strongly a-axis oriented (β-FeSi_2 layers on Si(001) substrates were formed when the substrates were heated at a temperature of 700℃, and iron deposition rate on Si(001) substrates was about 0.5nm/min using a vacuum evaporation method. N-type β-FeSi_2 layers were formed on Si(001) substrates at a temperature of 700℃ with evaporating different kinds of iron sources. The lowest carrier concentration is 1.3x10^<16>cm^<-3> and mobility is as high as 303cm^<-2>/Vs at room temperature. It is found from secondary ion analysis of iron sources and β-FeSi_2-formed-layers that the dominant impurity is cobalt. The influence of environment gases on the carrier concentrations in β-FeSi_2- formed-layers is also discussed. P-Si/β-FeSi_2/n-Si(001) substrate structure was formed and diodes were fabricated. The ideal factor of the current-voltage characteristics was as well as 1.27.