A Study of High Quality Beta-Irondisilicides formed on (001) Silicon Substrates by a Vacuum Deposition Method and the Fabrication of Light Emitting Diodes

(001)硅基片真空沉积法制备高质量β-二硅化铁及发光二极管的研究

• 批准号: 16560017
• 负责人: ISHII Makoto
• 金额: $ 2.37万
• 依托单位: KANAZAWA INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560017/
• 关键词: iron disilicide; iron; vacuum deposition; thin film; silicon; epitaxy; high purity; heterojunction; oriented growth; β-FeSi2

Strongly a-axis oriented (β-FeSi_2 layers on Si(001) substrates were formed when the substrates were heated at a temperature of 700℃, and iron deposition rate on Si(001) substrates was about 0.5nm/min using a vacuum evaporation method. N-type β-FeSi_2 layers were formed on Si(001) substrates at a temperature of 700℃ with evaporating different kinds of iron sources. The lowest carrier concentration is 1.3x10^<16>cm^<-3> and mobility is as high as 303cm^<-2>/Vs at room temperature. It is found from secondary ion analysis of iron sources and β-FeSi_2-formed-layers that the dominant impurity is cobalt. The influence of environment gases on the carrier concentrations in β-FeSi_2- formed-layers is also discussed. P-Si/β-FeSi_2/n-Si(001) substrate structure was formed and diodes were fabricated. The ideal factor of the current-voltage characteristics was as well as 1.27.

当加热温度为700min时，在Si(001)衬底上形成了强a轴取向的(β-FeSi2)层，用真空蒸发法在Si(001)衬底上沉积铁的速率约为0.5 nm/℃。用蒸发不同铁源的方法在Si(001)衬底上生长了N型β-FeSi2薄膜，温度为700℃。室温下最低载流子浓度为1.3×10~(-3)cm~(-3)，迁移率高达303 cm~(-2)/vs。通过对铁源和β-FeSi2形成层的二次离子分析发现，主要杂质是钴。讨论了环境气体对β-FeSi2形成层中载流子浓度的影响。形成了p-Si/β-FeSi2/n-Si(001)衬底结构，并制作了二极管。电流-电压特性的理想因子为1.27。

项目成果

Influence of the Residual Impurities in Iron Sources on Q -FeSi_2 Layers Formed on Silicon (001) Substrates by a Vacuum Deposition Method

铁源中残留杂质对真空沉积法在硅(001)基片上形成Q-FeSi_2层的影响

• 发表时间: 2006
• 期刊: The 9th Meeting of Silicede Semiconductors and, the Related Compoound Vol. 9
• 作者: M.Ishii;S.Hanamura;T.Miyata;T.Minami
• 通讯作者: T.Minami

蒸着法によるβ-FeSi_2生成層への残留不純物の影響

残留杂质对气相沉积法β-FeSi_2生成层的影响

• 发表时间: 2006
• 期刊: 第9回シリサイド系半導体研究会 9
• 作者: M.Ishii;S.Hanamura;T.Miyata;T.Minami;石井 恂
• 通讯作者: 石井 恂

A Study of formation on Silicon (001) Substrates by Vacuum Deposition of Iron at Elevated Temperatures

高温真空沉积铁在​​硅(001)衬底上形成的研究

• 期刊: to be Prepared in Jpn. J. Appl. Phys
• 作者: M.Ishii;S.Hanamura;T.Miyata;T.Minami;石井 恂;M.Ishii et al.
• 通讯作者: M.Ishii et al.

High purity β-FeSi2 formed on silicon(001) substrates by an vacuum Deposition method

真空沉积法在硅(001)衬底上形成高纯β-FeSi2

• 期刊: Jpn.J.Appl.Phys. (発売予定)
• 作者: M.Ishii;S.Hanamura;T.Miyata;T.Minami;石井 恂;M.Ishii et al.;M.Ishii et al.;M.Ishii et al.;Makoto Ishii
• 通讯作者: Makoto Ishii

β-FeSi_2 formation by an ultra-high vacuum deposition method

超高真空沉积法制备β-FeSi_2

• 期刊: Jpn.Appl.Phy. (発表予定)
• 作者: M.Ishii;et al.
• 通讯作者: et al.