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A STUDY OF NEW SOURCE MATERIAL FOR GROWING InGaN SYSTEM IN LOW PRESSURE ORGANOMETALLIC CHEMICAL VAPOR PHASE DEPOSITION APPARATUS

A STUDY OF NEW SOURCE MATERIAL FOR GROWING InGaN SYSTEM IN LOW PRESSURE ORGANOMETALLIC CHEMICAL VAPOR PHASE DEPOSITION APPARATUS
低压有机金属化学气相沉积装置中生长InGaN系统新原料的研究
批准号:
10650022
负责人:
ISHII Makoto
金额:
$2.56万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 1999

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中文摘要
翻译
在低压化学气相沉积装置的生长室中,首次用四极杆质量分析仪研究了一甲肼-三甲基镓和一甲肼-三甲基林钠体系的有效分解反应。结果表明,胺、甲胺、碳氢化合物等产物的生成温度低至30 0℃左右,随着温度的升高,与乙腈、二甲胺、单甲肼等中间产物一起形成稳定的氰化物和甲基氧化锌。采用monomethylhydrazine-trimethylgallium-trimethylindium低压化学气相沉积方法在GaN非晶层上连续生长InGaN薄膜,研究了中间产物在650℃以上的分解过程。结果表明,在650~750℃的生长温度范围内,由于衬底上三甲基镓分解生成的铟的解吸增加,InGaN层中的铟含量随着生长温度的升高而降低;在650℃恒定的三甲基镓中,生长层中的铟含量随着三甲基镓含量的增加而增加。
英文摘要
A quadrupole mass analyzer is for the first time used to study effective decomposition reactions of monomethylhydrazine-trimethylgallium and monomethylhydrazine-trimethylindium systems in a growth chamber of low-pressure chemical vapor deposition apparatus. It is found that the products such as amine, methylamine and hydrocarbons, are formed at a temperature as low as around 300℃ and that the stable cyane and monomethylcianide are formed together with intermediate products such as acetonitrile, dimethylamine, monomethylhydrazone, etc. as increasing the temperature. The intermediate products are decomposed above a temperature of approximately 650℃ in our apparatus.InGaN layers continuously grown on GaN amorphous layers by a low-pressure chemical vapor phase deposition method using monomethylhydrazine-trimethylgallium-trimethylindium were examined. It is found that the indium content in InGaN layers decreased with the increasing growth temperature from 650 to 750℃ due to the increasing desorption of indium formed on the substrates from the decomposition of trimethylinjium and that the indium content in grown layers increased with increasing the trimethylgallium under the constant trimethylindium at 650℃.
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DOI: --
发表时间:
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作者: []
通讯作者:
M.Ishii et al.: "Diagonstics of Gas Reaction Using Monomethylhydrazine-Trimethylindium in Chemical Vapor Phase Deposition Apparatus"Jpn.J.Appl.Phys.. in preparation.
M.Ishii等人:“Diagonstics of Gas Reaction using Monomethylhydrazine-Trimethylindium in Chemical Vapor Phase Deposition Apparatus”Jpn.J.Appl.Phys..正在准备。
DOI: --
发表时间:
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影响因子: --
作者: []
通讯作者:
M.Ishii et al.: "Diagonstics of Gas Reaction Using Monomethylhydrazine-Trimethylinjium in Chemical Vapor Deposition Apparatus,"Jpn.J.Appl.Phys.. (in Preparation).
M.Ishii 等人:“化学气相沉积装置中使用单甲基肼-三甲基酊的气体反应的诊断”,Jpn.J.Appl.Phys..(准备中)。
DOI: --
发表时间:
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作者: []
通讯作者:
M.Ishii et al.: "Thermal Decomposition of Monomethylhydrazine-Hydrogen in Low-Pressure Chemical Vapor Phase Deposition Apparatus"Jpn.J.Appl.Phys.. in preparation.
M.Ishii等人:“低压化学气相沉积装置中单甲基肼-氢的热分解”Jpn.J.Appl.Phys..正在准备中。
DOI: --
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影响因子: --
作者: []
通讯作者:
9
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