A STUDY OF NEW SOURCE MATERIAL FOR GROWING InGaN SYSTEM IN LOW PRESSURE ORGANOMETALLIC CHEMICAL VAPOR PHASE DEPOSITION APPARATUS
A STUDY OF NEW SOURCE MATERIAL FOR GROWING InGaN SYSTEM IN LOW PRESSURE ORGANOMETALLIC CHEMICAL VAPOR PHASE DEPOSITION APPARATUS
批准号:
10650022
负责人:
ISHII Makoto
金额:
$2.56万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 1999
中文摘要
首次采用四极质谱仪研究了一甲基肼-三甲基镓和一甲基肼-三甲基铟体系在低压化学气相沉积装置生长室中的有效分解反应。发现在300℃左右的低温下,生成胺、甲胺和烃类等产物,随着温度的升高,生成稳定的氰基和一甲基氰基,并生成乙腈、二甲胺、一甲基腙等中间产物。中间产物在650℃以上分解,采用一甲基肼-三甲基镓-三甲基铟低压化学气相沉积法在GaN非晶衬底上连续生长InGaN层。结果表明,在650 ~ 750℃范围内,随着生长温度的升高,InGaN层中的铟含量逐渐降低,这是由于三甲基铟分解形成在衬底上的铟的脱附量增加所致;在650℃下,在三甲基铟含量不变的情况下,生长层中的铟含量随着三甲基镓含量的增加而增加。
英文摘要
A quadrupole mass analyzer is for the first time used to study effective decomposition reactions of monomethylhydrazine-trimethylgallium and monomethylhydrazine-trimethylindium systems in a growth chamber of low-pressure chemical vapor deposition apparatus. It is found that the products such as amine, methylamine and hydrocarbons, are formed at a temperature as low as around 300℃ and that the stable cyane and monomethylcianide are formed together with intermediate products such as acetonitrile, dimethylamine, monomethylhydrazone, etc. as increasing the temperature. The intermediate products are decomposed above a temperature of approximately 650℃ in our apparatus.InGaN layers continuously grown on GaN amorphous layers by a low-pressure chemical vapor phase deposition method using monomethylhydrazine-trimethylgallium-trimethylindium were examined. It is found that the indium content in InGaN layers decreased with the increasing growth temperature from 650 to 750℃ due to the increasing desorption of indium formed on the substrates from the decomposition of trimethylinjium and that the indium content in grown layers increased with increasing the trimethylgallium under the constant trimethylindium at 650℃.
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M. Ishii et al: "Thermal Decomposition of Monomethylhydrazine-Hydrogen in Low-Pressure Chemical Vapor Deposition Apparatus"Jpn. J. Appl. Phys.. (in Preparation).
M. Ishii 等:“低压化学气相沉积装置中一甲基肼-氢的热分解”Jpn。
DOI:
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发表时间:
期刊:
影响因子:
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作者:
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通讯作者:
M.Ishii et al.: "Diagonstics of Gas Reaction Using Monomethylhydrazine-Trimethylindium in Chemical Vapor Phase Deposition Apparatus"Jpn.J.Appl.Phys.. in preparation.
M.Ishii等人:“Diagonstics of Gas Reaction using Monomethylhydrazine-Trimethylindium in Chemical Vapor Phase Deposition Apparatus”Jpn.J.Appl.Phys..正在准备。
DOI:
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发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
M.Ishii et al.: "Diagonstics of Gas Reaction Using Monomethylhydrazine-Trimethylinjium in Chemical Vapor Deposition Apparatus,"Jpn.J.Appl.Phys.. (in Preparation).
M.Ishii 等人:“化学气相沉积装置中使用单甲基肼-三甲基酊的气体反应的诊断”,Jpn.J.Appl.Phys..(准备中)。
DOI:
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发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
M.Ishii et al.: "Thermal Decomposition of Monomethylhydrazine-Hydrogen in Low-Pressure Chemical Vapor Phase Deposition Apparatus"Jpn.J.Appl.Phys.. in preparation.
M.Ishii等人:“低压化学气相沉积装置中单甲基肼-氢的热分解”Jpn.J.Appl.Phys..正在准备中。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
M.Ishii et al.: "Thermal Decopmosition of Monomethylhydrazine at High Temperature" Jpn.J.Appl.Phy.(発表予定).
M. Ishii 等人:“高温下单甲基肼的热分解”Jpn.J.Appl.Phy(待提交)。
DOI:
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发表时间:
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