A STUDY OF NEW SOURCE MATERIAL FOR GROWING InGaN SYSTEM IN LOW PRESSURE ORGANOMETALLIC CHEMICAL VAPOR PHASE DEPOSITION APPARATUS

低压有机金属化学气相沉积装置中生长InGaN系统新原料的研究

基本信息

  • 批准号:
    10650022
  • 负责人:
  • 金额:
    $ 2.56万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    1998
  • 资助国家:
    日本
  • 起止时间:
    1998 至 1999
  • 项目状态:
    已结题

项目摘要

A quadrupole mass analyzer is for the first time used to study effective decomposition reactions of monomethylhydrazine-trimethylgallium and monomethylhydrazine-trimethylindium systems in a growth chamber of low-pressure chemical vapor deposition apparatus. It is found that the products such as amine, methylamine and hydrocarbons, are formed at a temperature as low as around 300℃ and that the stable cyane and monomethylcianide are formed together with intermediate products such as acetonitrile, dimethylamine, monomethylhydrazone, etc. as increasing the temperature. The intermediate products are decomposed above a temperature of approximately 650℃ in our apparatus.InGaN layers continuously grown on GaN amorphous layers by a low-pressure chemical vapor phase deposition method using monomethylhydrazine-trimethylgallium-trimethylindium were examined. It is found that the indium content in InGaN layers decreased with the increasing growth temperature from 650 to 750℃ due to the increasing desorption of indium formed on the substrates from the decomposition of trimethylinjium and that the indium content in grown layers increased with increasing the trimethylgallium under the constant trimethylindium at 650℃.
首次采用四极质谱仪研究了一甲基肼-三甲基镓和一甲基肼-三甲基铟体系在低压化学气相沉积装置生长室中的有效分解反应。发现在300℃左右的低温下,生成胺、甲胺和烃类等产物,随着温度的升高,生成稳定的氰基和一甲基氰基,并生成乙腈、二甲胺、一甲基腙等中间产物。中间产物在650℃以上分解,采用一甲基肼-三甲基镓-三甲基铟低压化学气相沉积法在GaN非晶衬底上连续生长InGaN层。结果表明,在650 ~ 750℃范围内,随着生长温度的升高,InGaN层中的铟含量逐渐降低,这是由于三甲基铟分解形成在衬底上的铟的脱附量增加所致;在650℃下,在三甲基铟含量不变的情况下,生长层中的铟含量随着三甲基镓含量的增加而增加。

项目成果

期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
M. Ishii et al: "Thermal Decomposition of Monomethylhydrazine-Hydrogen in Low-Pressure Chemical Vapor Deposition Apparatus"Jpn. J. Appl. Phys.. (in Preparation).
M. Ishii 等:“低压化学气相沉积装置中一甲基肼-氢的热分解”Jpn。
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M.Ishii et al.: "Diagonstics of Gas Reaction Using Monomethylhydrazine-Trimethylindium in Chemical Vapor Phase Deposition Apparatus"Jpn.J.Appl.Phys.. in preparation.
M.Ishii等人:“Diagonstics of Gas Reaction using Monomethylhydrazine-Trimethylindium in Chemical Vapor Phase Deposition Apparatus”Jpn.J.Appl.Phys..正在准备。
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    0
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  • 通讯作者:
M.Ishii et al.: "Diagonstics of Gas Reaction Using Monomethylhydrazine-Trimethylinjium in Chemical Vapor Deposition Apparatus,"Jpn.J.Appl.Phys.. (in Preparation).
M.Ishii 等人:“化学气相沉积装置中使用单甲基肼-三甲基酊的气体反应的诊断”,Jpn.J.Appl.Phys..(准备中)。
  • DOI:
  • 发表时间:
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  • 影响因子:
    0
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  • 通讯作者:
M.Ishii et al.: "Thermal Decomposition of Monomethylhydrazine-Hydrogen in Low-Pressure Chemical Vapor Phase Deposition Apparatus"Jpn.J.Appl.Phys.. in preparation.
M.Ishii等人:“低压化学气相沉积装置中单甲基肼-氢的热分解”Jpn.J.Appl.Phys..正在准备中。
  • DOI:
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  • 影响因子:
    0
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M.Ishii et al.: "Thermal Decopmosition of Monomethylhydrazine at High Temperature" Jpn.J.Appl.Phy.(発表予定).
M. Ishii 等人:“高温下单甲基肼的热分解”Jpn.J.Appl.Phy(待提交)。
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ISHII Makoto其他文献

ISHII Makoto的其他文献

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{{ truncateString('ISHII Makoto', 18)}}的其他基金

Development of a direct induction method for human lung epithelial cells by reprogramming and elucidation of its molecular basis
通过重编程开发人肺上皮细胞直接诱导方法并阐明其分子基础
  • 批准号:
    18H02821
  • 财政年份:
    2018
  • 资助金额:
    $ 2.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A rearch study on the security of life and the development of the self-employed sector in local areas
地方群众生命保障与个体工商户发展调查研究
  • 批准号:
    16K04072
  • 财政年份:
    2016
  • 资助金额:
    $ 2.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Elucidation of epigenetic gene regulation mechanism for establishment of new therapeutic strategies for severe infectious diseases
阐明表观遗传基因调控机制,建立重症传染病治疗新策略
  • 批准号:
    15K09580
  • 财政年份:
    2015
  • 资助金额:
    $ 2.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Epigenetic gene regulation in sepsis
脓毒症的表观遗传基因调控
  • 批准号:
    22790956
  • 财政年份:
    2010
  • 资助金额:
    $ 2.56万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
A comparative study of young workers' occupation and marriage pathways during an era of declining birthrate in local areas across Japan.
日本各地少子化时期青年劳动者的职业和婚姻路径的比较研究
  • 批准号:
    20330106
  • 财政年份:
    2008
  • 资助金额:
    $ 2.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Reseach on employment stability and autonomy of professional-type white-collar and the structure of division and cooperation of labor
职业型白领就业稳定性、自主性及分工合作结构研究
  • 批准号:
    17530217
  • 财政年份:
    2005
  • 资助金额:
    $ 2.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
A Study of High Quality Beta-Irondisilicides formed on (001) Silicon Substrates by a Vacuum Deposition Method and the Fabrication of Light Emitting Diodes
(001)硅基片真空沉积法制备高质量β-二硅化铁及发光二极管的研究
  • 批准号:
    16560017
  • 财政年份:
    2004
  • 资助金额:
    $ 2.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of Ceramic Type Thin-Film Electroluminescent Devices High-Luminance Flat Panel Lamp
陶瓷型薄膜电致发光器件高亮度平板灯的研制
  • 批准号:
    08555014
  • 财政年份:
    1996
  • 资助金额:
    $ 2.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY OF NEW SOURCE MATERIAL FOR GROWING ALGaN SYSTEM IN LOW PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION APPARATUS
低压有机金属化学气相沉积装置中生长AlGaN系新原料的研究
  • 批准号:
    05650020
  • 财政年份:
    1993
  • 资助金额:
    $ 2.56万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

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