A STUDY OF NEW SOURCE MATERIAL FOR GROWING ALGaN SYSTEM IN LOW PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION APPARATUS

低压有机金属化学气相沉积装置中生长AlGaN系新原料的研究

• 批准号: 05650020
• 负责人: ISHII Makoto
• 金额: $ 1.54万
• 依托单位: KANAZAWA INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05650020/
• 关键词: III-V Compound; Gallium Nitride; Chemical Vapor Deposition; Monomethylhydrazine; Reaction Process; Crystal Growth; Mass-spectra; X-ray Diffraction

A quadrupole mass analyzer is for the first time used to study effective decomposition reactions of monomethylhydraine-trimethylgallium system in a growth chamber of low pressure chemical vapor deposition apparatus. It is found that the puroducts such as amine, methylamine, cyanogen and hydrocarbons, are effectively formed at a temperature as low as around 300ﾟC.The formation of methylamine and amine is available for growing nitride crystals, although The formation of cyanogen is not available.GaN layrs grown on (001) GaAs substrates by low pressure chemical vapor deposition apparatus using monomethylhydraine-trimethylgallium in a hydrogen are examined. The substrate temperature were changed from 400 to 700ﾟC.X-ray diffractions show the c-axis-oriented growth of GaN crystals were dominant in the substrate temperature from 550 to 650ﾟC,and also show very weak intensities due to cubic GaN crystals. However, the only c-axis-oriented hexagonal GaN crystals are grown when GaN crystals are grown using the monomethylhydrazine-trimethylgallium source on an AlN or GaN buffer layr which is grown at lower temperature on (001) GaAs substrate.

在低压化学气相沉积装置的生长室中，首次用四极杆质量分析仪研究了一甲基肼-三甲基镓体系的有效分解反应。结果表明，在300ﾟC左右的温度下，可以有效地生成胺、甲胺、氰化物和碳氢化合物等产物。甲胺和胺的生成有利于氮化物晶体的生长，但不能生成氰化物。用氢气中一甲基肼-三甲基镓的低压化学气相沉积装置在(001)GaN衬底上生长了GaN。衬底温度在400~700ﾟC之间变化。X射线衍射谱表明，衬底温度在550~650ﾟC范围内，GaN晶体以c轴取向为主，立方GaN晶体的生长强度也很弱。然而，在低温生长的AlN或GaN缓冲层上，用单甲基肼-三甲基镓生长GaN晶体时，只能生长出c轴取向的六方GaN晶体。

项目成果

Makoto Ishii: "Mass-spectrometric Study of Monomethylhydrazine Decomposition in Low-Pressure Chemical Vapor Deposition Apparatus by in-situ Gas Sampling" Japanese Journal of Applied Physics. (発表予定).

Makoto Ishii：“低压化学气相沉积装置中单甲基肼分解的原位气体采样质谱研究”《日本应用物理学杂志》（待出版）。

Makoto Ishii et al.: " "Mass-spectrometric Study of Monomethylhydrazine Decomposition in A Low-Pressure Organometallic Chemical Vapor Deposition Apparatus by in-situ Gas Sampling"" Journal of Applied Physics. (in preparation to Japanese).

Makoto Ishii 等人：“通过原位气体采样对低压有机金属化学气相沉积装置中一甲基肼分解的质谱研究”《应用物理学杂志》。