A STUDY OF NEW SOURCE MATERIAL FOR GROWING ALGaN SYSTEM IN LOW PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION APPARATUS

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A quadrupole mass analyzer is for the first time used to study effective decomposition reactions of monomethylhydraine-trimethylgallium system in a growth chamber of low pressure chemical vapor deposition apparatus. It is found that the puroducts such as amine, methylamine, cyanogen and hydrocarbons, are effectively formed at a temperature as low as around 300ﾟC.The formation of methylamine and amine is available for growing nitride crystals, although The formation of cyanogen is not available.GaN layrs grown on (001) GaAs substrates by low pressure chemical vapor deposition apparatus using monomethylhydraine-trimethylgallium in a hydrogen are examined. The substrate temperature were changed from 400 to 700ﾟC.X-ray diffractions show the c-axis-oriented growth of GaN crystals were dominant in the substrate temperature from 550 to 650ﾟC,and also show very weak intensities due to cubic GaN crystals. However, the only c-axis-oriented hexagonal GaN crystals are grown when GaN crystals are grown using the monomethylhydrazine-trimethylgallium source on an AlN or GaN buffer layr which is grown at lower temperature on (001) GaAs substrate.