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Establishment of Charging Free and Non-Scatter Implantation Technology for Micro Powders by Using Negative-Ion Beam

Establishment of Charging Free and Non-Scatter Implantation Technology for Micro Powders by Using Negative-Ion Beam
负离子束无电荷、无散射微粉注入技术的建立
批准号:
08555172
负责人:
ISHIKAWA Junzo
金额:
$12.74万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997

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中文摘要
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英文摘要
1.Elucidation of Particle-Scattering Phenomenon and Threshold Charging VoltageScattering of powders during conventional positive-ion implantation without any charge compensation results from a high charging voltage. Taking account of forces acting on one particle in the top layr : Coulomb repulsive force and attractive forces to other particles in the layr just below, such as gravity and van der Waals force, the threshold charging voltage for scattering was derived for a stationary state and a vibrated state. This relation was confirmed by experiments. Thus, we have clarified the mechanism of particle scattering.2.Development of Negative-Ion Implanter for Powders with an Agitator and Non-ScatteringWe constructed a negative-ion implantation for micro-powders as equipped with ion beam bending deflector and an agitator of electromagnetic vibrator at a frequency of 120 Hz. With this implanter, various negative ions were implanted into powders at 70 keV.No scattering was observed. The negat … More ive-ion implantation is found a nonscattering implantation method for powders.3.Evaluation of Charging Surface Potential of Insulators at Negative-Ion ImplantationWe measured surface potentials of several kinds of insulators by secondary electron energy analysis. The surface potential during negative-ion implantation was only several volts negative much less than threshold voltage. Therefore, scattering is considered to not result in negative-ion implantation.4.Establishment of Agitation Method by Vibration for Treatment of Whole Surface of Powder-ParticlesFor agitation by vibration, required conditions of frequency and amplitude were theoretically driven. The conditions were confirmed by vibration experiments. For evaluation of uniformity, copper negative ions were implanted into glass beads. From contents of copper atoms in a bead by XPS,the implantation under the vibration was found to make treatment of whole surface with good uniformity.Thus, we developed a negative-ion implanterfor powders and established negative-ion implantation into powders as a charging free and non-scattering ion implantation method with a good uniformity. Less
期刊论文(40)
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会议论文
Junzo Ishikawa: "Negative-Ion Sources for Modification of Matherials (invited)" Review of Scientific Instruments. Vol.67. 1410-1415 (1996)
Junzo Ishikawa:“用于材料改性的负离子源(特邀)”科学仪器评论。
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Junzo Ishikawa: "Non-Scattering Technique of Ion Implantation into Powders of Micro-Beads by Using Negative Ions" (to be published in Surface Coatings and Technology). 6ページ (1998)
Junzo Ishikawa:“使用负离子将离子注入微珠粉末的非散射技术”(将发表在《表面涂层与技术》上),第 6 页(1998 年)。
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Junzo Ishikawa: "Study on Emission Yields of Negative- and Positive-Ion Induced Secondary Electron from Thin SiO_2 Film" Nuclear Instruments and Methods. B127-128. 278-281 (1997)
Junzo Ishikawa:“SiO_2 薄膜负离子和正离子诱导二次电子发射产率的研究”核仪器和方法。
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28
    Development of Nitride and Carbide Cathodes for Realization of Highly Stable Vacuum Micro Electron Sources
    • 批准号:
      12135204
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $17.98万
    • 财政年份:
      2000
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    Ion Beam Processing of Polymeric Biomaterials
    • 批准号:
      11694148
    • 项目类别:
      Grant-in-Aid for Scientific Research (B).
    • 资助金额:
      $3.01万
    • 财政年份:
      1999
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    Negative-Ion Beam Material Processing Techniques
    • 批准号:
      08044140
    • 项目类别:
      Grant-in-Aid for international Scientific Research
    • 资助金额:
      $3.84万
    • 财政年份:
      1996
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    Development of Charge-up Free lon lmplantation by Using Negative lon Beam
    • 批准号:
      05555008
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research (B)
    • 资助金额:
      $10.62万
    • 财政年份:
      1993
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    海外基金