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Development of Negative-Ion-Beam Techniques for Film Formation and Crystallinity Control

Development of Negative-Ion-Beam Techniques for Film Formation and Crystallinity Control
负离子束成膜和结晶度控制技术的发展
批准号:
61460065
负责人:
ISHIKAWA Junzo
金额:
$4.22万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1986
资助国家:
日本
项目状态:
已结题
起止时间:
1986 至 1987

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中文摘要
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英文摘要
In this research project, two application apparatuses of negative ion beam were developed, and negative-ion-beam techniques for film formation and crystallinity control were also developed by using these apparatuses. From invesigation in this project, many important results were obtained.A negative ion beam deposition system has been constructed by combination of a high-current heavy negative ion source (NIABNIS), which was already developed by the authors, a mass-separator, and a newly designed deceleration electrode and lens system. Thw deposition system could deliver a sufficient amount of negative ions with a quite low energy controlled precisely for film formation. Carbon films were prepared with a mass-separated pure C^- or C2^- ion beam at various beam energy for investigating properties of the film. The properties of carbon films, such as optical band gap, electrical resistivity, atomic adensity, and thermal conductivity, depend upon a negative-ion-beam energy and ion species. … More These dependencies were considered to result from an energy density. which is deposited to a local area of a substrate by ion beam, and from a displacement probability of the film by it, or from a binding state (electron configuration) ofion species.On the other hand, a negative ion implanter was also constructed. By using this implanter, fundamental properties such as ion projection range and distribution of implanted atoms for nagative ion implantation were confirmed to be predicted with the LSS's theory as well as for a conventional positive ion implantation. Then, a crystallinity of implanted layer formed by C^- ion beam was investigated. After annealing the layer at 925゜C during 20 minutes, BETA-SiC bond was formed in the layer.Electron detachment cross sections for heavy negative ion beams were investigated as an interaction of negative ions with gas particles. This phenomenon is fundamental and important for pure physics, and such information is also important for technology and is required for designing an apparatus of negative ion beam. Less
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作者: []
通讯作者:
石川順三: "イオン源工学" アイオニクス社, 547 (1986)
石川纯三:《离子源工程》Ionics,547 (1986)
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19
    Development of Nitride and Carbide Cathodes for Realization of Highly Stable Vacuum Micro Electron Sources
    • 批准号:
      12135204
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $17.98万
    • 财政年份:
      2000
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    Ion Beam Processing of Polymeric Biomaterials
    • 批准号:
      11694148
    • 项目类别:
      Grant-in-Aid for Scientific Research (B).
    • 资助金额:
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    • 财政年份:
      1999
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    Negative-Ion Beam Material Processing Techniques
    • 批准号:
      08044140
    • 项目类别:
      Grant-in-Aid for international Scientific Research
    • 资助金额:
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    • 财政年份:
      1996
    • 负责人:
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    • 依托单位:
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    • 批准号:
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    • 项目类别:
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    • 资助金额:
      $12.74万
    • 财政年份:
      1996
    • 负责人:
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    • 依托单位:
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