Negative-Ion Beam Material Processing Techniques
Negative-Ion Beam Material Processing Techniques
批准号:
08044140
负责人:
ISHIKAWA Junzo
金额:
$3.84万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997
中文摘要
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英文摘要
l.High Current Negative-Ion Extraction and Acceleration Techniques for Negative-Ion ImplanterA lens equipped just after an extractor and charge compensation by introduced gas were effective for beam divergence due to space charge of high current ion beam. A method of gas supply brought a new production of mA-class negative ions such as F,O,and CN in our RF plasma-sputter-type heavy negative-ion source. With this ion source, a negative-ion implanter was developed which could accelerate negative ions up to 100keV.2.Negative-Ion Implantation Technique and Application to Material ProcessingIn the negative-ion implantation, a surface potential of insulators is only several volts due to formation of an electric double layr during implantation. This is a charging-free implantation method. (1) non-scattering and uniform negative-ion implantation method for powders was developed, and (2) negative-ion implantation was found to control biocompatibility of polymers used in medical and biological f … More ields.3.Deceleration Technique for Low Energy Negative-Ion and Negative-Ion Beam Deposition ApparatusDeceleration just before substrate was effective, and could suppress beam divergence. We constructed a negative-ion beam deposition apparatus in an ultra-high vacuum and an negative-ion etching system.4.Application of Low-Energy Negative-Ion Beams to Material ProcessingAs material processing technique, we investigated ion beam deposition and etching by using negative-ion beam.(1) C and CN negative-ion beam deposition at a low energy was found to create metastable material films such as diamond-like carbon and carbon nitride.(2) Fluorine-negative-ion etching at a low energy could effectively etch Si and SiO_2 film with a low damage.Thus, we investigated techniques of acceleration and deceleration of a high-current negative ion beam and developed negative ion apparatus. Negative-ion beam techniques of low energy deposition, etching and high energy implantation was established as material processing techniques. Less
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石川 順三: "負イオンの発見から現在の応用に至るまで" アイオニクス. 第23巻. 1-6 (1997)
Junzo Ishikawa:“从负离子的发现到其当前的应用”,Ionics,第 23 卷,1-6 (1997)。
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通讯作者:
Junzo Ishikawa: "Short History from Discovery of Negative Ions to Their Current Applications" Ionics. Vol.23, No.261. 1-6 (1997)
Junzo Ishikawa:“从负离子的发现到当前应用的简史”离子学。
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Hiroshi Tsuji: "Negative-Ion Production of Reactive Elements from Compound Gases in the RF Plasma-Sputter-Type Heavy Ngative-Ion Source" Ion Implantatin Technology-96. IEEE96TH8182. 334-337 (1997)
Hiroshi Tsuji:“在射频等离子体溅射型重负离子源中从复合气体中产生活性元素的负离子”离子注入技术-96。
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Junzo Ishikawa: "Particle-Scattering Phenomenon of Powders Caused by Charging Voltage of the Surface during Ion Implantation" Ion Implantatin Technology-96. IEEE96TH8182. 249-252 (1997)
Junzo Ishikawa:“离子注入过程中表面充电电压引起的粉末粒子散射现象”离子注入技术-96。
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Hiroshi Tsuji: "Extraction of Molecular Negative-Ion Beams of CN from RF Plamsa-Sputter-Type Heavy Negative-Ion Source" Review of Scientific Instruments. (to be published). (1998)
Hiroshi Tsuji:“从射频等离子体溅射型重负离子源中提取 CN 分子负离子束”科学仪器评论。
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共 43 条
Development of Nitride and Carbide Cathodes for Realization of Highly Stable Vacuum Micro Electron Sources
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批准号:12135204
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
-
资助金额:$17.98万
-
财政年份:2000
-
负责人:ISHIKAWA Junzo
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依托单位:
Ion Beam Processing of Polymeric Biomaterials
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批准号:11694148
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$3.01万
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财政年份:1999
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负责人:ISHIKAWA Junzo
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依托单位:
Establishment of Charging Free and Non-Scatter Implantation Technology for Micro Powders by Using Negative-Ion Beam
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批准号:08555172
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$12.74万
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财政年份:1996
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负责人:ISHIKAWA Junzo
-
依托单位:
Development of Charge-up Free lon lmplantation by Using Negative lon Beam
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批准号:05555008
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$10.62万
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财政年份:1993
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负责人:ISHIKAWA Junzo
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依托单位:
Establishment of the Negative-Ion Beam Technology for Material Modification
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批准号:05402027
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$19.2万
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财政年份:1993
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负责人:ISHIKAWA Junzo
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依托单位:
Development of Negative-Ion-Beam Techniques for Film Formation and Crystallinity Control
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批准号:61460065
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.22万
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财政年份:1986
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负责人:ISHIKAWA Junzo
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依托单位:
海外基金