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Negative-Ion Beam Material Processing Techniques

Negative-Ion Beam Material Processing Techniques
负离子束材料加工技术
批准号:
08044140
负责人:
ISHIKAWA Junzo
金额:
$3.84万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997

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中文摘要
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英文摘要
l.High Current Negative-Ion Extraction and Acceleration Techniques for Negative-Ion ImplanterA lens equipped just after an extractor and charge compensation by introduced gas were effective for beam divergence due to space charge of high current ion beam. A method of gas supply brought a new production of mA-class negative ions such as F,O,and CN in our RF plasma-sputter-type heavy negative-ion source. With this ion source, a negative-ion implanter was developed which could accelerate negative ions up to 100keV.2.Negative-Ion Implantation Technique and Application to Material ProcessingIn the negative-ion implantation, a surface potential of insulators is only several volts due to formation of an electric double layr during implantation. This is a charging-free implantation method. (1) non-scattering and uniform negative-ion implantation method for powders was developed, and (2) negative-ion implantation was found to control biocompatibility of polymers used in medical and biological f … More ields.3.Deceleration Technique for Low Energy Negative-Ion and Negative-Ion Beam Deposition ApparatusDeceleration just before substrate was effective, and could suppress beam divergence. We constructed a negative-ion beam deposition apparatus in an ultra-high vacuum and an negative-ion etching system.4.Application of Low-Energy Negative-Ion Beams to Material ProcessingAs material processing technique, we investigated ion beam deposition and etching by using negative-ion beam.(1) C and CN negative-ion beam deposition at a low energy was found to create metastable material films such as diamond-like carbon and carbon nitride.(2) Fluorine-negative-ion etching at a low energy could effectively etch Si and SiO_2 film with a low damage.Thus, we investigated techniques of acceleration and deceleration of a high-current negative ion beam and developed negative ion apparatus. Negative-ion beam techniques of low energy deposition, etching and high energy implantation was established as material processing techniques. Less
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会议论文
石川 順三: "負イオンの発見から現在の応用に至るまで" アイオニクス. 第23巻. 1-6 (1997)
Junzo Ishikawa:“从负离子的发现到其当前的应用”,Ionics,第 23 卷,1-6 (1997)。
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Hiroshi Tsuji: "Negative-Ion Production of Reactive Elements from Compound Gases in the RF Plasma-Sputter-Type Heavy Ngative-Ion Source" Ion Implantatin Technology-96. IEEE96TH8182. 334-337 (1997)
Hiroshi Tsuji:“在射频等离子体溅射型重负离子源中从复合气体中产生活性元素的负离子”离子注入技术-96。
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43
    Development of Nitride and Carbide Cathodes for Realization of Highly Stable Vacuum Micro Electron Sources
    • 批准号:
      12135204
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $17.98万
    • 财政年份:
      2000
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    Ion Beam Processing of Polymeric Biomaterials
    • 批准号:
      11694148
    • 项目类别:
      Grant-in-Aid for Scientific Research (B).
    • 资助金额:
      $3.01万
    • 财政年份:
      1999
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    Establishment of Charging Free and Non-Scatter Implantation Technology for Micro Powders by Using Negative-Ion Beam
    • 批准号:
      08555172
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $12.74万
    • 财政年份:
      1996
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    Development of Charge-up Free lon lmplantation by Using Negative lon Beam
    • 批准号:
      05555008
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research (B)
    • 资助金额:
      $10.62万
    • 财政年份:
      1993
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    海外基金