Control of magnetic properties of Invar alloy by using giant stress in thin films.

利用薄膜中的巨大应力控制因瓦合金的磁性能。

基本信息

  • 批准号:
    08650765
  • 负责人:
  • 金额:
    $ 1.41万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    1996
  • 资助国家:
    日本
  • 起止时间:
    1996 至 1997
  • 项目状态:
    已结题

项目摘要

Atomic magnetic moment depends on the atomic distance and/or crystalstructure. Based on this view point, the Fe-Ni alloy sputtered thin films have been investigated.As-deposited films on the glass substrates show the saturated magnetization expected from ideal alloy. The structure is, however, amorphous structure. After annealing, the structure changes into polycrystalline and saturation magnetization decreases. To obtain the f.c.c. crystalline phase in as-deposited state, Au under layr is adopted. Then, the f.c.c.phase is realized in a concentration range over the 30at%Ni. Based on this result, the Fe_<0.7>Ni_<0.3> films on the Au under layr are investigated. The atomic magnetic moment depends on the film thickness of Fe_<0.7>Ni_<0.3>. in a range less than 60nm. The crystal deformation is evaluated by using x-ray diffraction and transmission electron diffraction. Fe_<0.7>Ni_<0.3>/Au show the lattice deformation toward surface normal.On the other hand, to induce further lattice deformation on the Fe_<0.7>Ni_<0.3> films on Au under layrs, stacking of sputtered Mo layrs are examined. It is confirmed that the internal film stress of the Mo can be changed with working Ar gas pressure. In the case of Mo/Fe_<0.7>Ni_<0.3>/Au stacking structure, the lattice deformation takes place in both directions of the in-plane and surface normal direction.As the result, in the film of Fe_<0.7>Ni_<0.3> anisometric lattice deformation was observed by the stacking of Mo and/or Au layr. The corresponding atomic magnetic moment changes with the averaged lattice parameter. The trajectory of the change, however, depends on the lattice deformation.
原子磁矩取决于原子距离和/或晶体结构。基于这一观点,我们对Fe-Ni合金溅射薄膜进行了研究,在玻璃衬底上沉积的薄膜表现出理想合金所期望的饱和磁化强度。然而,该结构是无定形结构。退火后,结构转变为多晶,饱和磁化强度降低。要获得fcc在沉积状态下的晶相,采用层下Au。然后,f.c.c.相在超过30at%Ni的浓度范围内实现。在此基础上,研究了在Au衬底上的Fe_<0.7>Ni_<0.3>2薄膜。原子磁矩与Fe_ Ni_2薄膜厚度有关<0.7><0.3>。在小于60 nm的范围内。用X射线衍射和透射电子衍射评价了晶体的形变。Fe_<0.7>Ni_2<0.3>/Au薄膜表现出晶格向表面法线方向的形变,另一方面,为了进一步诱导层下Au上Fe_ Ni<0.7>_2<0.3>薄膜的晶格形变,我们研究了溅射Mo层的堆叠。实验结果表明,Mo薄膜内应力随工作Ar气压的变化而变化。在Mo/Fe_<0.7>Ni_2<0.3>/Au叠层结构中,晶格在面内和表面法线方向上都发生了形变,结果表明,在Fe_ Ni_2薄膜中<0.7><0.3>,由于Mo和/或Au层的叠层而发生了非等轴晶格形变。相应的原子磁矩随平均晶格参数的变化而变化。然而,变化的轨迹取决于晶格变形。

项目成果

期刊论文数量(6)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Ishiguro and T.Sato: "Structural Evolution of Sputtered Molybdenum Thin Film Growth" Mater.Trans., JIM. to be published. (1998)
T.Ishiguro 和 T.Sato:“溅射钼薄膜生长的结构演化”Mater.Trans.,JIM。
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T.Ishiguro,T.Sato,T.Iwashita,S.Yamada,Y.Ichinose,T.Shinohara,M.Tobise and H.Hagiwara: "Pole density distribution in CoCrTa/Cr sputtered thin film media and magnetic properties." Journal of Magnetism and Magnetic Materials. 155. 256-260 (1996)
T.Ishiguro、T.Sato、T.Iwashita、S.Yamada、Y.Ichinose、T.Shinohara、M.Tobise 和 H.Hagiwara:“CoCrTa/Cr 溅射薄膜介质中的磁极密度分布和磁特性。”
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    0
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T.Ishiguro,S.Ikeda and K.Hamasaki: "Deformation of Anodic Surface Induced by Applying Electic Field in Metal/Thin Insulator/Metal Stacking Structure." Jpn.J.Appl.Phys.35. 4775-4779 (1996)
T.Ishiguro、S.Ikeda 和 K.Hamasaki:“在金属/薄绝缘体/金属堆叠结构中施加电场引起的阳极表面变形”。
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    0
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T.Ishiguro et al.: "Pole density distribution in CoCrTa/Cr sputtered thin film media and magnetic properties." Journal of Magnetism and Magnetic Materials. 155. 256-260 (1996)
T.Ishiguro 等人:“CoCrTa/Cr 溅射薄膜介质中的极密度分布和磁特性。”
  • DOI:
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  • 影响因子:
    0
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  • 通讯作者:
T.Ishiguro, T.Sato, T.Iwashita, S.Yamada, Y.Ichinose, T.Shinohara, M.Tobise and H.Hagiwara: "Pole density distribution in CoCrTa/Cr sputtered thin film media and magnetic properties" Journal of Magnetism and Magnetic Materials. 155. 256-260 (1996)
T.Ishiguro、T.Sato、T.Iwashita、S.Yamada、Y.Ichinose、T.Shinohara、M.Tobise 和 H.Hagiwara:“CoCrTa/Cr 溅射薄膜介质中的极密度分布和磁性能”期刊
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ISHIGURO Takashi其他文献

ISHIGURO Takashi的其他文献

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{{ truncateString('ISHIGURO Takashi', 18)}}的其他基金

Fabrication of microscopic infrared spectrum analysis system for in-situ observation of chemical reaction in the water
原位观察水中化学反应的显微红外光谱分析系统的研制
  • 批准号:
    23360282
  • 财政年份:
    2011
  • 资助金额:
    $ 1.41万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Investigation of the formation process of transparent conductive film by using superheated steam and/or water plasma jet
利用过热蒸汽和/或水等离子体射流形成透明导电膜的过程研究
  • 批准号:
    22656139
  • 财政年份:
    2010
  • 资助金额:
    $ 1.41万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Fabrication of opto-functional AR coating for the solar spectrum by green chemistry process with water
通过水的绿色化学工艺制备太阳光谱光学功能增透膜
  • 批准号:
    20360292
  • 财政年份:
    2008
  • 资助金额:
    $ 1.41万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Evaluation of Optical Properties of Dye-sensitized Solar Cell Incorporating Mesoscopic Interfacial Roughness
结合介观界面粗糙度的染料敏化太阳能电池的光学性能评估
  • 批准号:
    16360312
  • 财政年份:
    2004
  • 资助金额:
    $ 1.41万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of Selective Solar Absorber Coating by・ Stratified Integration of Mesoscopic Structures
通过介观结构的分层集成开发选择性太阳能吸收涂层
  • 批准号:
    14550651
  • 财政年份:
    2002
  • 资助金额:
    $ 1.41万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Improvement in Systematized Photo-thermoelectric Energy Conversion Film by Controlling Mesoscopic Film Structure
通过控制介观薄膜结构改进系统化光热电能量转换薄膜
  • 批准号:
    12650658
  • 财政年份:
    2000
  • 资助金额:
    $ 1.41万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Formation of photo-thermoelectric energy conversion functional films by controlling film structure in nanometer scale.
通过纳米尺度控制薄膜结构形成光热电能量转换功能薄膜。
  • 批准号:
    10650649
  • 财政年份:
    1998
  • 资助金额:
    $ 1.41万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Formation of nanoconstriction in thin insulating films by applying electric field.
通过施加电场在绝缘薄膜中形成纳米收缩。
  • 批准号:
    06650723
  • 财政年份:
    1994
  • 资助金额:
    $ 1.41万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

相似海外基金

Film Stress and Morphology Evolution during MOCVD Growth of InGaN
InGaN MOCVD 生长过程中的薄膜应力和形貌演变
  • 批准号:
    1006763
  • 财政年份:
    2010
  • 资助金额:
    $ 1.41万
  • 项目类别:
    Continuing Grant
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