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Control of magnetic properties of Invar alloy by using giant stress in thin films.

Control of magnetic properties of Invar alloy by using giant stress in thin films.
利用薄膜中的巨大应力控制因瓦合金的磁性能。
批准号:
08650765
负责人:
ISHIGURO Takashi
金额:
$1.41万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997

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中文摘要
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英文摘要
Atomic magnetic moment depends on the atomic distance and/or crystalstructure. Based on this view point, the Fe-Ni alloy sputtered thin films have been investigated.As-deposited films on the glass substrates show the saturated magnetization expected from ideal alloy. The structure is, however, amorphous structure. After annealing, the structure changes into polycrystalline and saturation magnetization decreases. To obtain the f.c.c. crystalline phase in as-deposited state, Au under layr is adopted. Then, the f.c.c.phase is realized in a concentration range over the 30at%Ni. Based on this result, the Fe_<0.7>Ni_<0.3> films on the Au under layr are investigated. The atomic magnetic moment depends on the film thickness of Fe_<0.7>Ni_<0.3>. in a range less than 60nm. The crystal deformation is evaluated by using x-ray diffraction and transmission electron diffraction. Fe_<0.7>Ni_<0.3>/Au show the lattice deformation toward surface normal.On the other hand, to induce further lattice deformation on the Fe_<0.7>Ni_<0.3> films on Au under layrs, stacking of sputtered Mo layrs are examined. It is confirmed that the internal film stress of the Mo can be changed with working Ar gas pressure. In the case of Mo/Fe_<0.7>Ni_<0.3>/Au stacking structure, the lattice deformation takes place in both directions of the in-plane and surface normal direction.As the result, in the film of Fe_<0.7>Ni_<0.3> anisometric lattice deformation was observed by the stacking of Mo and/or Au layr. The corresponding atomic magnetic moment changes with the averaged lattice parameter. The trajectory of the change, however, depends on the lattice deformation.
期刊论文(6)
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会议论文
T.Ishiguro and T.Sato: "Structural Evolution of Sputtered Molybdenum Thin Film Growth" Mater.Trans., JIM. to be published. (1998)
T.Ishiguro 和 T.Sato:“溅射钼薄膜生长的结构演化”Mater.Trans.,JIM。
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通讯作者:
T.Ishiguro,T.Sato,T.Iwashita,S.Yamada,Y.Ichinose,T.Shinohara,M.Tobise and H.Hagiwara: "Pole density distribution in CoCrTa/Cr sputtered thin film media and magnetic properties." Journal of Magnetism and Magnetic Materials. 155. 256-260 (1996)
T.Ishiguro、T.Sato、T.Iwashita、S.Yamada、Y.Ichinose、T.Shinohara、M.Tobise 和 H.Hagiwara:“CoCrTa/Cr 溅射薄膜介质中的磁极密度分布和磁特性。”
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T.Ishiguro,S.Ikeda and K.Hamasaki: "Deformation of Anodic Surface Induced by Applying Electic Field in Metal/Thin Insulator/Metal Stacking Structure." Jpn.J.Appl.Phys.35. 4775-4779 (1996)
T.Ishiguro、S.Ikeda 和 K.Hamasaki:“在金属/薄绝缘体/金属堆叠结构中施加电场引起的阳极表面变形”。
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Fabrication of microscopic infrared spectrum analysis system for in-situ observation of chemical reaction in the water
  • 批准号:
    23360282
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 资助金额:
    $12.65万
  • 财政年份:
    2011
  • 负责人:
    ISHIGURO Takashi
  • 依托单位:
Investigation of the formation process of transparent conductive film by using superheated steam and/or water plasma jet
  • 批准号:
    22656139
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
  • 资助金额:
    $2.34万
  • 财政年份:
    2010
  • 负责人:
    ISHIGURO Takashi
  • 依托单位:
Fabrication of opto-functional AR coating for the solar spectrum by green chemistry process with water
  • 批准号:
    20360292
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 资助金额:
    $12.4万
  • 财政年份:
    2008
  • 负责人:
    ISHIGURO Takashi
  • 依托单位:
Evaluation of Optical Properties of Dye-sensitized Solar Cell Incorporating Mesoscopic Interfacial Roughness
  • 批准号:
    16360312
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 资助金额:
    $9.47万
  • 财政年份:
    2004
  • 负责人:
    ISHIGURO Takashi
  • 依托单位:
海外基金