Formation of nanoconstriction in thin insulating films by applying electric field.

通过施加电场在绝缘薄膜中形成纳米收缩。

基本信息

  • 批准号:
    06650723
  • 负责人:
  • 金额:
    $ 1.47万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 财政年份:
    1994
  • 资助国家:
    日本
  • 起止时间:
    1994 至 1995
  • 项目状态:
    已结题

项目摘要

Metal (Al)/insulator (SiO_2 and/or MgO)/metal (Au) stacking structure with thin (5-20nm) insulating films have been fabricated. The electrically insulating state changes into conductive state by applying d.c. voltage.The threshold voltage from insulating state to conductive state (V_t) has been measured as a function of the thickness for SiO_2 (t_<SiO2>) and MgO (t_<MgO>) films, respectively. Results are as follows : for SiO2 films, V_t [V] =0.7 [V/nm] ・t_<SiO2> [nm], and for MgO films, V_t [V] =0.44 [V/nm]・t_<MgO> [nm].The Au anodic surfaces before and after applying field have been observed using scanning tunneling microscope (STM). The morphology on the Au anodic surface changed for the each process to form nanoconstrictions in the insulating films. Present experiment revealed the fact that the electrical change in the MIM structure form insulating to conducting related the formation of nanoconstriction due to the deformation of the surface of anodic material.
制备了金属(Al)/绝缘体(SiO_2和/或MgO)/金属(Au)叠层结构,绝缘膜厚度为5- 20 nm。测量了SiO_2膜和MgO膜从绝缘态到导电态的阈值电压(Vt)与膜厚的关系<SiO2><MgO>。结果表明:SiO2膜的Vt [V] =0.7 [V/nm] ·<SiO2>tnm,MgO膜的Vt [V] =0.44 [V/nm]·<MgO>tnm。Au阳极表面的形态改变的每一个过程中形成的绝缘膜中的纳米收缩。本实验揭示了MIM结构中由绝缘到导电的电性变化与阳极材料表面变形导致的纳米收缩的形成有关。

项目成果

期刊论文数量(22)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Y.Misaki, A.Saito, and K.Hamasaki: "Crossover of Noise in Superconducting Mesoscopic Devices." Extended Abst. of the 1995 Int'l Conf. on Solid State Devices and Materials.407-409 (1995)
Y.Misaki、A.Saito 和 K.Hamasaki:“超导介观器件中的噪声交叉”。
  • DOI:
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    0
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  • 通讯作者:
T.Ishiguro et al.: "STM observation of nanoconstriction in thin insulating films formed by applying electric field." J.Appl.Phys.(submitted).
T.Ishiguro 等人:“通过施加电场形成的绝缘薄膜中纳米收缩的 STM 观察。”
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    0
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H.Abe, K.Hamasaki, and T.Ishiguro: "Fabrication of Superconducting Quantum Interference Device with Thin-Film Quantum Point Contacts" Jpn. J.Appl. Phys.33. 7210-7213 (1994)
H.Abe、K.Hamasaki 和 T.Ishiguro:“采用薄膜量子点接触的超导量子干涉装置的制造”Jpn。
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    0
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  • 通讯作者:
A.Takada, T.Ikuta, A.Tachibana, T.Fukumoto, M.Hatle, and K.Hamasaki: "Quasiparticle Characteristics and Noise Properties of Superconductor-Normal Metal-Superconductor Quantum Wall Devices." Jpn. J.Appl. Phys.34. 1401-1404 (1995)
A.Takada、T.Ikuta、A.Tachibana、T.Fukumoto、M.Hatle 和 K.Hamasaki:“超导-普通金属-超导量子壁器件的准粒子特性和噪声特性”。
  • DOI:
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  • 影响因子:
    0
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H.Abe et.al.: "Fabrication of Superconducting Quantum Interference Device with Tin-Film Quantum Point Contacts." Jpn.J.Appl.Phys.33. 7210-7213 (1994)
H.Abe 等人:“采用锡膜量子点接触的超导量子干涉装置的制造”。
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ISHIGURO Takashi其他文献

ISHIGURO Takashi的其他文献

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{{ truncateString('ISHIGURO Takashi', 18)}}的其他基金

Fabrication of microscopic infrared spectrum analysis system for in-situ observation of chemical reaction in the water
原位观察水中化学反应的显微红外光谱分析系统的研制
  • 批准号:
    23360282
  • 财政年份:
    2011
  • 资助金额:
    $ 1.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Investigation of the formation process of transparent conductive film by using superheated steam and/or water plasma jet
利用过热蒸汽和/或水等离子体射流形成透明导电膜的过程研究
  • 批准号:
    22656139
  • 财政年份:
    2010
  • 资助金额:
    $ 1.47万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Fabrication of opto-functional AR coating for the solar spectrum by green chemistry process with water
通过水的绿色化学工艺制备太阳光谱光学功能增透膜
  • 批准号:
    20360292
  • 财政年份:
    2008
  • 资助金额:
    $ 1.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Evaluation of Optical Properties of Dye-sensitized Solar Cell Incorporating Mesoscopic Interfacial Roughness
结合介观界面粗糙度的染料敏化太阳能电池的光学性能评估
  • 批准号:
    16360312
  • 财政年份:
    2004
  • 资助金额:
    $ 1.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of Selective Solar Absorber Coating by・ Stratified Integration of Mesoscopic Structures
通过介观结构的分层集成开发选择性太阳能吸收涂层
  • 批准号:
    14550651
  • 财政年份:
    2002
  • 资助金额:
    $ 1.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Improvement in Systematized Photo-thermoelectric Energy Conversion Film by Controlling Mesoscopic Film Structure
通过控制介观薄膜结构改进系统化光热电能量转换薄膜
  • 批准号:
    12650658
  • 财政年份:
    2000
  • 资助金额:
    $ 1.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Formation of photo-thermoelectric energy conversion functional films by controlling film structure in nanometer scale.
通过纳米尺度控制薄膜结构形成光热电能量转换功能薄膜。
  • 批准号:
    10650649
  • 财政年份:
    1998
  • 资助金额:
    $ 1.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Control of magnetic properties of Invar alloy by using giant stress in thin films.
利用薄膜中的巨大应力控制因瓦合金的磁性能。
  • 批准号:
    08650765
  • 财政年份:
    1996
  • 资助金额:
    $ 1.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

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