Formation of nanoconstriction in thin insulating films by applying electric field.

通过施加电场在绝缘薄膜中形成纳米收缩。

• 批准号: 06650723
• 负责人: ISHIGURO Takashi
• 金额: $ 1.47万
• 依托单位: Nagaoka University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06650723/
• 关键词: Field Evapolation; Quantum Wire; Thin Film; Insulating Thin Film; Quantum Effect

Metal (Al)/insulator (SiO_2 and/or MgO)/metal (Au) stacking structure with thin (5-20nm) insulating films have been fabricated. The electrically insulating state changes into conductive state by applying d.c. voltage.The threshold voltage from insulating state to conductive state (V_t) has been measured as a function of the thickness for SiO_2 (t_<SiO2>) and MgO (t_<MgO>) films, respectively. Results are as follows : for SiO2 films, V_t [V] =0.7 [V/nm] ・t_<SiO2> [nm], and for MgO films, V_t [V] =0.44 [V/nm]・t_<MgO> [nm].The Au anodic surfaces before and after applying field have been observed using scanning tunneling microscope (STM). The morphology on the Au anodic surface changed for the each process to form nanoconstrictions in the insulating films. Present experiment revealed the fact that the electrical change in the MIM structure form insulating to conducting related the formation of nanoconstriction due to the deformation of the surface of anodic material.

制备了金属（Al）/绝缘体（SiO_2和/或MgO）/金属（Au）叠层结构，绝缘膜厚度为5- 20 nm。测量了SiO_2膜和MgO膜从绝缘态到导电态的阈值电压（Vt）与膜厚的关系<SiO2><MgO>。结果表明：SiO2膜的Vt [V] =0.7 [V/nm] ·<SiO2>tnm，MgO膜的Vt [V] =0.44 [V/nm]·<MgO>tnm。Au阳极表面的形态改变的每一个过程中形成的绝缘膜中的纳米收缩。本实验揭示了MIM结构中由绝缘到导电的电性变化与阳极材料表面变形导致的纳米收缩的形成有关。

项目成果

Y.Misaki, A.Saito, and K.Hamasaki: "Crossover of Noise in Superconducting Mesoscopic Devices." Extended Abst. of the 1995 Int'l Conf. on Solid State Devices and Materials.407-409 (1995)

Y.Misaki、A.Saito 和 K.Hamasaki：“超导介观器件中的噪声交叉”。

T.Ishiguro et al.: "STM observation of nanoconstriction in thin insulating films formed by applying electric field." J.Appl.Phys.(submitted).

T.Ishiguro 等人：“通过施加电场形成的绝缘薄膜中纳米收缩的 STM 观察。”

H.Abe, K.Hamasaki, and T.Ishiguro: "Fabrication of Superconducting Quantum Interference Device with Thin-Film Quantum Point Contacts" Jpn. J.Appl. Phys.33. 7210-7213 (1994)

H.Abe、K.Hamasaki 和 T.Ishiguro：“采用薄膜量子点接触的超导量子干涉装置的制造”Jpn。

A.Takada, T.Ikuta, A.Tachibana, T.Fukumoto, M.Hatle, and K.Hamasaki: "Quasiparticle Characteristics and Noise Properties of Superconductor-Normal Metal-Superconductor Quantum Wall Devices." Jpn. J.Appl. Phys.34. 1401-1404 (1995)

A.Takada、T.Ikuta、A.Tachibana、T.Fukumoto、M.Hatle 和 K.Hamasaki：“超导-普通金属-超导量子壁器件的准粒子特性和噪声特性”。

H.Abe et.al.: "Fabrication of Superconducting Quantum Interference Device with Tin-Film Quantum Point Contacts." Jpn.J.Appl.Phys.33. 7210-7213 (1994)

H.Abe 等人：“采用锡膜量子点接触的超导量子干涉装置的制造”。