Film Stress and Morphology Evolution during MOCVD Growth of InGaN

InGaN MOCVD 生长过程中的薄膜应力和形貌演变

• 批准号: 1006763
• 负责人: Joan Redwing
• 金额: $ 38.8万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-07-01 至 2015-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1006763&HistoricalAwards=false
• 关键词: Film; Stress; Morphology; Evolution; during

Technical: This project explores the evolution of film stress, surface morphology and microstructure during the growth of InGaN by metalorganic chemical vapor deposition (MOCVD) on Ga-polar and N-polar GaN surfaces. A combination of in-situ wafer curvature measurements to probe dynamic changes in biaxial stress during MOCVD growth and post-growth transmission electron microscopy characterization will be emphasized. Initial studies will focus on investigation of compressive stress relaxation in InGaN grown on Ga-polar GaN on (0001) SiC substrates. The effects of N-rich vs group III-rich growth and intentional Si doping on stress relaxation, surface morphology and the structural and optical properties of the material will be studied early in the project. Comparable studies will then be carried out for N-polar InGaN/GaN grown on misoriented SiC. The project aims for identification and understanding of fundamental mechanisms of stress relaxation in InGaN, and the type and spatial distribution of resulting defects along with development of strategies to control stress and reduce defect formation. Non-technical: The project addresses basic research issues in a topical area of materials science with technological relevance in electronics and photonics. The results from the proposed study are anticipated to yield new insights into the mechanisms of stress relaxation and microstructure evolution in Ga-polar and N-polar InGaN layers that can be exploited for improvements in photovoltaic and solid state lighting performance. The project forms the basis of Ph.D. thesis work of two graduate students; undergraduate students will also be involved in the research through REU programs at Penn State. The project enables the PI and her graduate students to collaborate with members of the Penn State MRSEC Center for Nanoscale Science and personnel at the Franklin Institute Museum in Philadelphia, PA on the development of a cart-based interactive demonstration kit on energy materials. The PI will assist in the development of module activities that utilize light emitting diodes to convey technical concepts such as light emission from semiconductor materials, color mixing and solid state lighting. The museum show on energy materials will initially be developed for visitors of the Franklin Institute but will also be distributed nationwide to at least twenty other science museums.

技术：本项目探讨了金属有机化学气相沉积（MOCVD）在ga -极性和n -极性GaN表面生长InGaN过程中薄膜应力、表面形貌和微观结构的演变。将强调结合原位晶圆曲率测量来探测MOCVD生长过程中双轴应力的动态变化以及生长后的透射电子显微镜表征。最初的研究将集中在（0001）SiC衬底上的ga -极性GaN上生长的InGaN的压应力松弛。富n与富iii族生长以及有意掺杂Si对材料应力松弛、表面形貌以及结构和光学性质的影响将在项目早期进行研究。然后将对在错取向SiC上生长的n极性InGaN/GaN进行类似的研究。该项目旨在识别和了解InGaN中应力松弛的基本机制，以及由此产生的缺陷的类型和空间分布，并制定控制应力和减少缺陷形成的策略。非技术：该项目涉及与电子和光子学技术相关的材料科学主题领域的基础研究问题。该研究结果有望对ga -极性和n -极性InGaN层的应力松弛和微观结构演变机制产生新的见解，可用于改善光伏和固态照明性能。该项目是两名研究生博士论文工作的基础；本科生也将通过宾夕法尼亚州立大学的REU项目参与研究。该项目使PI和她的研究生能够与宾夕法尼亚州立大学MRSEC纳米科学中心的成员以及宾夕法尼亚州费城富兰克林研究所博物馆的工作人员合作，开发基于小车的能源材料交互式演示套件。PI将协助开发利用发光二极管来传达技术概念的模块活动，例如半导体材料的发光，颜色混合和固态照明。能源材料的博物馆展览将首先为富兰克林研究所的参观者开发，但也将在全国至少20个其他科学博物馆分发。