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Basic Research for the Fabrication of Light Emitting Devices Utilizing Quantum Confined Exciton Molecules

Basic Research for the Fabrication of Light Emitting Devices Utilizing Quantum Confined Exciton Molecules
利用量子约束激子分子制造发光器件的基础研究
批准号:
10305025
负责人:
FUJITA Shigeo
金额:
$19.46万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A).
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 2000

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英文摘要
The objective of this project is to pursue basic research on radiative and nonradiative recombination processes of excitons and exciton molecules in widegap semiconductors. This was facilitated by making detailed characterization on the correlation between microscopic structures and macroscopic optical properties in both ZnSe-based II-Vl semiconductors and GaN-based III-V semiconductors by means of employing time-resolved photoluminescence (TRPL) spectroscopy. The results obtained in the period of 2000 to 2001 can be summarized as follows.(1) Time-space resolved luminescence apparatus was developed by combining optical microscope with ultraviolet optics, pico-second pulsed lasers and streak camera. PL dynamics in self-formed CdSe quantum dots (QDs) grown on cleaved ZnSe (110) substrates was characterized using this system. Large fluctuation of both wavelengths and lifetimes was observed in PL spectra. It can be understood as size of potential confinement differs with QDs, so that trans … More ition energy as well as oscillator strength of excitons is modulated accordingly.(2) Dynamical behavior of optical gain formation has been assessed at room temperature (RT) in the InGaN multi quantum well (MQW) lased Baser diodes (LDs) by employing pump & probe (P&P) spectroscopy under the pulse width of 150 fs. The LDs are composed of (a) In_<0.1>Ga_<0.9>N-In_<0.02>Ga_<0.98>N MQW and (b) In_<0.3>Ga_<0.7>N-In_<0.05>Ga_<0.95>N MQW, whose stimulated emissions correspond to near ultraviolet (390 nm) and blue (440 nm), respectively. The optical gain was contributed from the nearly delocalized states [the lowest-quantized MQW levels (LQL)] in the sample (a), while it was from highly localized levels with respect to LQL by 500 meV for the sample (b). It was found that the photo-generated carriers rapidly (less than 1 ps) transferred to LQL, and then relaxed to the localized tail within the time-scale of about 5 ps, giving rise to the optical gain. Such gain spectra were saturated and other bands appeared in the vicinity of LQL under higher photo-excitation. Less
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Y.Kawakami, Y.Narukawa, Sg.Fujita et al.: "Dynamics of optical gain in In_xGa_<1-x>N multi-quantum-well-based laser diodes"Applied Physics Letters. 77 14. 2151-2153 (2000)
Y.Kawakami、Y.Narukawa、Sg.Fujita 等人:“In_xGa_<1-x>N 多量子阱激光二极管中的光学增益动力学”应用物理快报。
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发表时间:
期刊:
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通讯作者:
Y.Kawakami,Y.Narukawa,Sg.Fujita 他: "Dimensionality of excitons in InGaN-based light emitting devices "Physica Statuds Solidi (a). 178. 331-336 (2000)
Y. Kawakami、Y. Narukawa、Sg. Fujita 等人:“InGaN 基发光器件中激子的维数”Physica Statuds Solidi (a) (a)。
DOI: --
发表时间:
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作者: []
通讯作者:
Y.Kawakami,Y.Narukawa,K.Omae 他: "Dynamics of optical gain in In_xGa_<1-x>N multi-quantum-well-based laser diodes"Applied Physics Letters. 77. 2151-2153 (2000)
Y. Kawakami、Y. Narukawa、K. Omae 等人:“In_xGa_<1-x>N 多量子阱激光二极管中的光学增益动力学”应用物理快报 77. 2151-2153 (2000)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Y.Narukawa, Y.Kawakami, Sg.Fujita et al.: "Recombination dynamics in In_xGa_<1-x>N multiple-quantum-well based laser diodes under high photoexcitation"Physica Status Solid (a). 176. 39-43 (2000)
Y.Narukawa、Y.Kawakami、Sg.Fujita 等人:“In_xGa_<1-x>N 多量子阱基激光二极管在高光激发下的复合动力学”Physica Status Solid (a)。
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24
    Photodynamics of White Luminescence in Organic Thin Films
    • 批准号:
      13450011
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $5.38万
    • 财政年份:
      2001
    • 负责人:
      FUJITA Shigeo
    • 依托单位:
    Research for the Fabrication of Light Emitting Diodes with Ultra-high Efficiency
    • 批准号:
      10355001
    • 项目类别:
      Grant-in-Aid for Scientific Research (A).
    • 资助金额:
      $18.69万
    • 财政年份:
      1998
    • 负责人:
      FUJITA Shigeo
    • 依托单位:
    Dynamics of Semiconductor Vapor Growth with Photocatalytic Surface Reactions
    • 批准号:
      07405017
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $17.41万
    • 财政年份:
      1995
    • 负责人:
      FUJITA Shigeo
    • 依托单位:
    Development of blue-green semiconductor lasers by metalorganic vapor phase epitoxy
    • 批准号:
      06555006
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research (B)
    • 资助金额:
      $1.73万
    • 财政年份:
      1994
    • 负责人:
      FUJITA Shigeo
    • 依托单位:
    海外基金