Development of blue-green semiconductor lasers by metalorganic vapor phase epitoxy

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For the development of II-VI semiconductor laser grown by metalorganic vapor phase epitaxy (MOVPE) , novel structural control and doping techniques have been investigated. The results are summarized as follows ;1.Photo-assisted MOVPE with alkyl-sources was proved to be the promising technology, where photo-generated carriers can assist the p-type doping.2.Tertiarybutylamine was found to be the ptomising p-type doping precursor.3.The maximum net acceptor concentration in p-type ZnSe was 5*10^<17>cm^<-3>, which was achieved by the post-growth thermal annealing.4.Laser operation with double heterostructure could not be observed, because of unexpected interdiffusion during the annealing.5.Metal/GaAs/ZnSe structures were proposed as a novel electrode configuration.6.A guideline towards MOVPE-grown laser, i.e., source precursors, growth conditions, structures on p-type substrates, acceptor activation by rapid thermal annealing, etc., has been clearly identified.