Epitaxial Growth of Novel II-VI Semiconductor Alloys for Ultraviolet Optical Devices

用于紫外光学器件的新型 II-VI 半导体合金的外延生长

基本信息

  • 批准号:
    05452097
  • 负责人:
  • 金额:
    $ 4.93万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
  • 财政年份:
    1993
  • 资助国家:
    日本
  • 起止时间:
    1993 至 1994
  • 项目状态:
    已结题

项目摘要

The objective of this research is to establish epitaxial growth technique for novel II-VI semiconductor alloys which is to be applied to the optical devices in ultraviolet region. The results are summarized as follows.1. (Zn, Cd) (S,Se) alloys and a ZnCdSSe-ZnSSe double heterostructure (DH structure) were grown on GaP by gas-source (GS) molecular beam epitaxy (MBE). From the ZnCdSSe active layr of the DH structure photoluminescence peaking at around 3.2eV was observed, which suggests that the band structure was type-I and carriers were confined in the active layr in accordance with band-lineup calculation.2.Since the growth rate in GSMBE was quite slow, MBE using an elemental sulfur was investigated. To overcome the high vapor-pressure of an elemental sulfur, a cracking cell was designed, by which sufficient growth rate could be obtained.3.RHEED observation revealed that when ZnS was directly grown on a GaP (100) substrate by MBE,the growth mode was 3-dimensional and many twins were co … More ntained. It was found by optimization of growth conditions that 3-dimensional growth and twin generation were suppressed by a misoriented GaP substrate and a ZnS buffer layr grown at a high temperature, respectively.4.n-type conduction control in ZnS-based alloys was successfully achieved up to 2x10^<18>cm^<-3> by chlorine doping. However, p-type conduction was not obtained by nitrogen doping, unlike ZnSe-based alloys.5.On the basis of the above results, Au/ZnSSe/ZnCdSSe/ZnSSe : Cl MIS structure was fabricated on a misoriented GaP through ZnS buffer layr. Compared with conventional MIS,the MIS in this study is characterized by the ZnCdSSe quantum well. The well is expected to confine carriers and to enhance emission efficiency. Strong ultraviolet emission at 400nm was obtained by current injection at 77K for the first time.These results strongly suggest high potential of (Zn, Cd) (S,Se) alloys on GaP system for the application to ultraviolet optical devices. Further investigation for the improvement of crystallographic quality may contribute to the realization of devices in the spectral region. Less
本研究的目的是建立一套适用于紫外光器件的新型II-VI族半导体合金的外延生长技术。研究结果如下:1. (Zn用气体源分子束外延(GS)技术在GaP衬底上生长了(S,Se)合金和ZnCdSSe-ZnSSe双异质结构(DH结构)。从DH结构的ZnCdSSe活性层观察到光致发光峰在3.2eV左右,这表明其能带结构为I型,载流子被限制在活性层中,这与能带排列计算一致。2.由于GSMBE中的生长速率很慢,因此研究了使用元素硫的MBE。3. RHEED观察表明,利用分子束外延技术在GaP(100)衬底上直接生长ZnS时,ZnS的生长模式为三维生长模式,在生长过程中出现了大量的孪晶 ...更多信息 保留。通过对生长条件的优化,发现在高温下生长的GaP衬底和ZnS缓冲层分别抑制了三维生长和孪晶的产生。4.通过氯掺杂,成功地实现了ZnS基合金的n型导电控制,最高可达2 × 10 ~<18><-3>(-3)cm ~ 3。在此基础上,通过ZnS缓冲层在取向差的GaP上制备了Au/ZnSSe/ZnCdSSe/ZnSSe:Cl MIS结构。与传统的MIS相比,本研究中的MIS的特征在于ZnCdSSe量子阱。该阱有望限制载流子并提高发射效率。首次在77 K下通过电流注入获得了400 nm的强紫外光发射,这些结果表明GaP体系上的(Zn,Cd)(S,Se)合金在紫外光器件方面具有很高的应用潜力。进一步研究晶体学质量的改善可能有助于实现光谱区的器件。少

项目成果

期刊论文数量(20)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Sg.Fujita: "Growth of ZnS and ZnCdSSe Alloys on GaP Using an Elemental Sulfur Source by Molecular Beam Epitaxy" Journal of Crystal Growth. 138. 28-34 (1994)
Sg.Fujita:“通过分子束外延使用元素硫源在 GaP 上生长 ZnS 和 ZnCdSSe 合金”《晶体生长杂志》。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Sg.Fujita: ""Fabrication of II-VI Semiconductor Quantum Well Structures in ZnCdSSe Alloy Systems"" Physica B. 191. 57-70 (1993)
Sg.Fujita:“ZnCdSSe 合金系统中 II-VI 半导体量子阱结构的制造”Physica B. 191. 57-70 (1993)
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Sg.Fujita: ""Near-UV Electroluminescence from ZnCdSe/ZnSSe Metal-Insulator-Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy"" Jpn.J.Appl.Phys. 32. L1200-1202 (1993)
Sg.Fujita:“分子束外延生长的 GaP 上 ZnCdSe/ZnSSe 金属绝缘体半导体二极管的近紫外电致发光”Jpn.J.Appl.Phys。
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    0
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FUJITA Shigeo其他文献

FUJITA Shigeo的其他文献

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{{ truncateString('FUJITA Shigeo', 18)}}的其他基金

Photodynamics of White Luminescence in Organic Thin Films
有机薄膜中白光发光的光动力学
  • 批准号:
    13450011
  • 财政年份:
    2001
  • 资助金额:
    $ 4.93万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Basic Research for the Fabrication of Light Emitting Devices Utilizing Quantum Confined Exciton Molecules
利用量子约束激子分子制造发光器件的基础研究
  • 批准号:
    10305025
  • 财政年份:
    1998
  • 资助金额:
    $ 4.93万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A).
Research for the Fabrication of Light Emitting Diodes with Ultra-high Efficiency
超高效率发光二极管的制作研究
  • 批准号:
    10355001
  • 财政年份:
    1998
  • 资助金额:
    $ 4.93万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A).
Dynamics of Semiconductor Vapor Growth with Photocatalytic Surface Reactions
光催化表面反应的半导体气相生长动力学
  • 批准号:
    07405017
  • 财政年份:
    1995
  • 资助金额:
    $ 4.93万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Development of blue-green semiconductor lasers by metalorganic vapor phase epitoxy
金属有机气相外延开发蓝绿光半导体激光器
  • 批准号:
    06555006
  • 财政年份:
    1994
  • 资助金额:
    $ 4.93万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Growth and properties of ZnCdSSe new alloy semiconductors for short wavelength laser applications
用于短波长激光应用的 ZnCdSSe 新型合金半导体的生长和性能
  • 批准号:
    02452147
  • 财政年份:
    1990
  • 资助金额:
    $ 4.93万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
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