Growth and properties of ZnCdSSe new alloy semiconductors for short wavelength laser applications

用于短波长激光应用的 ZnCdSSe 新型合金半导体的生长和性能

• 批准号: 02452147
• 负责人: FUJITA Shigeo
• 金额: $ 4.16万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-02452147/
• 关键词: Short Wavelength Lasers; Double Heterostructure; Band Discontinuity; New Alloy Semiconductor; 有機金属分子線成長

1. Procedures for calculating band gaps and lattice constants in the ZnCdSSe new alloy semiconductor system, and for estimating band lineups in their multilayered structures were established. The results demonstrated the ZnCdSe/ZnSSe blue-green laser and ZnSSe/ZnCdSSe ultraviolet laser structures coherently grown on GaAs and GaP substrates, respectively.2. Growth conditions of ZnSe, ZnSSe, ZnCdSe, ZnCdS, and ZnCdSSe in metalorganic molecular beam epitaxy(MOMBE)for precise lattice matching or for coherent growth on GaAs substrates were successfully established. Sulfur passivation pretreatment of GaAs was found, to be effective for atomically controled growth and for high quality epilayers and epilayer/substrate interfaces. In situ reflactive high energy electron diffraction(RHEED)monitoring was applied for the growth control of multilayered structures and successfully resulted in well defined structures.3. From crystaline and optical properties of epilayers and multilayered structures, … More heterointerface properties, interdiffusion, and band discontinuity were characterized.4. Doping of Cl and N was found to be promising for n- and p-type conductivity control, respectively.5. Optically pumped laser action was confirmed in the double heterostructures. Characterization of threshold power, quantum efficiency, and polarization revealed that band discontinuity was one of the important factors for high performance lasers.6. ZnCdSSe multilayered structures on GaP were fabricated and their fundamental properties were characterized. It was found that they possessed type-I band structure and carriers were effectively confined in well layers ; there features were promising for applications to lasers in ultraviolet region.Throughout the study, it was found that the ZnCdSSe new alloy semiconductor system possessed promising characteristics for short wavelength region laser applications ; it is strongly expected that this new alloy system well contribute to open a window for future optoelectronics. Less

1.计算ZnCdSSe新合金半导体系统的带隙和晶格常数的程序，并估计其多层结构中的能带排列。结果表明，分别在GaAs和GaP衬底上相干生长了ZnCdSe/ZnSSe蓝绿激光器和ZnSSe/ZnCdSSe紫外激光器结构.成功地建立了金属有机分子束外延（MOMBE）中ZnSe、ZnSSe、ZnCdSe、ZnCdS和ZnCdSSe的生长条件，以实现精确的晶格匹配或在GaAs衬底上的相干生长。硫钝化预处理的GaAs被发现，是有效的原子控制生长和高质量的外延层和外延层/衬底界面。将原位激发高能电子衍射（RHEED）监测应用于多层结构的生长控制，成功地得到了清晰的结构.从外延层和多层结构的晶体和光学性质来看， ...更多信息 对异质界面性质、互扩散和能带不连续性进行了表征. Cl和N的掺杂被发现分别对于n型和p型导电性控制是有希望的。在双异质结中证实了光泵激光的作用。阈值功率、量子效率和偏振特性的研究表明，能带不连续性是影响激光器性能的重要因素之一.在GaP衬底上制备了ZnCdSSe多层结构，并对其基本性质进行了表征。结果表明，ZnCdSSe合金半导体具有I型能带结构，载流子被有效地限制在阱层中，这些特性在紫外激光器中具有应用前景.通过研究发现，ZnCdSSe新合金半导体系统具有应用于短波长激光器的前景;强烈期望这种新的合金系统很好地有助于为未来的光电子学打开窗口。少

项目成果

Takahiro Ohnakado: ""On the properties of ZnSe/ (NH_4) _2S_x -pretreated GaAs heterointerfaces"" Jpn. J. Appl. Phys.30 (8). 1668-1669 (1991)

Takahiro Onakado：“关于 ZnSe/ (NH_4) _2S_x 预处理的 GaAs 异质界面的特性”Jpn。

Kunio Ichino: ""Metalorganic molecular beam epitaxy of ZnCdSSe quaternary alloys on GaAs substrate"" Jpn. J. Appl. Phys.30 (9B). L1624-L1626 (1991)

Kunio Ichino：“GaAs 衬底上 ZnCdSSe 四元合金的金属有机分子束外延”Jpn。

市野 邦男: "Metalorganic molecular beam epitaxy of ZnCdSSe quaternary alloys on GaAs substrate" Japanese Jopurnal of Applied Physics. 30. L1624-L1626 (1991)

Kunio Ichino：“GaAs 衬底上 ZnCdSSe 四元合金的金属有机分子束外延”，日本应用物理学杂志 30。L1624-L1626 (1991)。

Kunio Ichino: ""Design and fabrication of II-VI semiconductor heterostructures "(in Japanese)" Oyo Buturi. 61 (2). 117-125 (1992)

Kunio Ichino：““II-VI 半导体异质结构的设计和制造”（日语）”Oyo Buturi。

市野 邦男: "IIーVI族半導体ヘテロ構造の設計と作製" 応用物理. 61. 117-125 (1992)

Kunio Ichino：“II-VI 族半导体异质结构的设计和制造”应用物理 61. 117-125 (1992)。