Dynamics of Semiconductor Vapor Growth with Photocatalytic Surface Reactions

本研究的目的是开发光催化表面反应，这是我们的小组已经探索，作为一种新的技术，为未来的设备应用与生长动力学，生长控制，杂质掺杂和材料控制的调查。主要结果如下：1.通过对ZnSe生长过程的原位监测，发现ZnSe生长的基本过程是烷基锌的分解，伴随着光生载流子的产生，烷基锌的分解导致烷基硒的分解。（i）生长的最初始阶段是由热分解主导的，随后是热分解，（ii）证实了逐层生长，3.将该技术应用于气相生长中的难点ZnSe的p型掺杂，并成功地获得了10 μ cm ~ 3量级的净受主浓度<17><-3>。光学和电学特性表明，非辐射缺陷可以通过选择最佳的生长条件来减少，用该技术生长的ZnCdSe/ZnSe/ZnSSe量子阱激光器在77 K下实现了连续激光输出，这在气相生长器件中尚属首次。

This research was carried out aimed at developing the photocatalytic surface reactions, which had been explored by our group, as a new technology for future device applications with the investigations on growth dynamics, growth control, impurity doping, and material control. The results are summarized as follows ;1.With in-situ monitoring during the grwoth of ZnSe, the fundamental growth processes were found to ve decomposition of alkylzinc associated with photogenerated carries, and then this brought in decomposition of alkylselenium.2.Important knowledges were ; (i) the most initial stage the growth was dominated by thermal decomposition and the photocatalysis followed, (ii) the layr-by-layr growth was confirmed, and (iii) the growth processes were closely related to the surface stoichiometry.3.This technique was applied for p-type doping of ZnSe, which had been a difficult subject in vapor growth, and successfully resulted in the net acceptor concentration of the order of 10^<17>cm^<-3>. The optical and electrical characterizations revealed non-radiative defects, and they could be reduced by choosing the optimum growth conditions.ZnCdSe/ZnSe/ZnSSe quantum well lasers grown by this technique achieved CW lasing at 77K,which was for the first time in vapor-grown devices.