Dynamics of Semiconductor Vapor Growth with Photocatalytic Surface Reactions

光催化表面反应的半导体气相生长动力学

• 批准号: 07405017
• 负责人: FUJITA Shigeo
• 金额: $ 17.41万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07405017/
• 关键词: photocatalysis; growth processes; ZnCdSSe; impurity doping; p-type control; quantum structure; current-injection lasing; 反応素過程; 欠陥制御; 励起子発光寿命

This research was carried out aimed at developing the photocatalytic surface reactions, which had been explored by our group, as a new technology for future device applications with the investigations on growth dynamics, growth control, impurity doping, and material control. The results are summarized as follows ;1.With in-situ monitoring during the grwoth of ZnSe, the fundamental growth processes were found to ve decomposition of alkylzinc associated with photogenerated carries, and then this brought in decomposition of alkylselenium.2.Important knowledges were ; (i) the most initial stage the growth was dominated by thermal decomposition and the photocatalysis followed, (ii) the layr-by-layr growth was confirmed, and (iii) the growth processes were closely related to the surface stoichiometry.3.This technique was applied for p-type doping of ZnSe, which had been a difficult subject in vapor growth, and successfully resulted in the net acceptor concentration of the order of 10^<17>cm^<-3>. The optical and electrical characterizations revealed non-radiative defects, and they could be reduced by choosing the optimum growth conditions.ZnCdSe/ZnSe/ZnSSe quantum well lasers grown by this technique achieved CW lasing at 77K,which was for the first time in vapor-grown devices.

本研究旨在通过对生长动力学、生长控制、杂质掺杂和材料控制等方面的研究，将本课题组探索的光催化表面反应作为一种新技术应用于未来的器件应用。结果表明：1.通过对生长过程的现场监测，发现烷基锌在光生载流子作用下的主要生长过程是烷基锌的分解，进而导致烷基硒的分解。(I)生长初期以热分解为主，其次是光催化作用，(Ii)证实了逐层生长，(Iii)生长过程与表面化学计量密切相关。3.将该技术应用于气相生长中的一个难点问题--p型掺杂，成功地获得了10^&lt；17&gt；cm^&lt；-3&gt；的净受主浓度。光学和电学表征显示了非辐射缺陷，通过选择最佳的生长条件可以减少这些缺陷。用这种技术生长的ZnCd/ZnSe/ZnSSe量子阱激光器在77K下实现了连续激光，这在气相生长器件中是第一次。

项目成果

藤田 静雄: "MO (GS) MBE and photo-MO (GS) MBE of II-VI semiconductors" Journal of Crystal Growth. 164. 196-201 (1996)

Shizuo Fujita：“II-VI 半导体的 MO (GS) MBE 和光 MO (GS) MBE”《晶体生长杂志》164. 196-201 (1996)。

藤田茂夫: "Stimulated Emission from ZnSe-Based Laser Diode Structure Grown by Photoassisted MOVPE with Annealing Technique" Extended Abstracts of 1997 International Conference on Solid State Devices and Materials. 214-215 (1997)

Shigeo Fujita：“采用退火技术的光辅助 MOVPE 生长的 ZnSe 基激光二极管结构的受激发射”1997 年国际固态器件和材料会议的扩展摘要 214-215 (1997)。

藤田 静雄: "Growth of p-type Zn(S)Se layers by MOVPE" Journal of Crystal Growth. (印刷中).

Shizuo Fujita：“通过 MOVPE 生长 p 型 Zn(S)Se 层”《晶体生长杂志》（正在出版）。

藤田 茂夫: "Properties of Wide Bandgap Semiconductors" INSPEC Publication(分担執筆), 247 (1997)

Shigeo Fujita：“宽带隙半导体的特性”INSPEC Publication（撰稿人），247 (1997)

FUJITA Shigeo, et al.: Semiconductor and Semimetals 44. Academic Press, 338 (1997)

FUJITA Shigeo 等：半导体和半金属 44。学术出版社，338（1997）