Investigation of a light-induced Structure change of amorphous materials by using laser ablation method

利用激光烧蚀法研究光致非晶材料的结构变化

• 批准号: 10450329
• 负责人: KOINUMA Hideomi
• 金额: $ 9.02万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10450329/
• 关键词: LD TOF-MS; KCN treatment; a-Si:H; photo degradation; laser ablation; ZnO; precusor; KCN処理a-Si:H; レーザー脱離飛行時間型質量分析器; 酸化亜鉛; アモルファスシリコン

1. Analysis of LD TOF-MS for a-Si:H films treated with KCN solutionIn order to depress the photo degradation of a-Si:H, we treated a-Si:H films with the mixed solution of both KCN (solvent : ethanol 0.1M) and crown ether (18 crown 6-ether, 0.2M) under the various conditions. While a-Si:H films were soaked by 100mW/cmィイD12ィエD1 of Xe lamp for 40 hours, the remarkable degradation was hardly detected for a-Si:H film treated for 4 min. When LD TOF-MS analysis was carried out for a-Si:H films changing KCN treatment time, it was found that the highest threshold energy for the ablation was observed in 3-4 min treatment. Furthermore, SIMS analysis revealed the increase of mass number 26 indicating CNィイD1-ィエD1 ion with the increase of the treatment time. These results indicate that CNィイD1-ィエD1 ion with high coordination could terminate the dangling bonds in a-Si:H and it could depress the light-induced dangling bonds.2. Analysis of LD TOF-MS for oxide, nitride and ZnSLD TOF-MS is as sensitive as SIMS for detecting the impurities in material. When we consider the precursors arriving at growing surface in the film deposition method of laser ablation, LD TOF-MS is suitable rather than SIMS. We established the cleaning process for ZnO target.The nitride materials which can be expected to supply N as p-dopant effectively for achieving p-type ZnO were investigated by LD TOF-MS. Unfortunately, GaN ィイD22ィエD2 and AINィイD22ィエD2 precursors acting as co-dopant were hardly detected. When ZnS material was ablated by laser, ZnS molecular precursor was confirmed. Although ZnS film is conventionally deposited at less than 300℃ due to high vapor pressure of Zn and S, it can be deposited at 800℃ by laser ablation.

1. KCN溶液处理a-Si：H薄膜的LD TOF-MS分析为了抑制a-Si：H薄膜的光降解，我们用KCN（溶剂：乙醇0.1M）和冠醚（18冠6-醚，0.2M）的混合溶液在不同条件下处理a-Si：H薄膜。a-Si：H薄膜在100 mW/cm × 12此外，西姆斯分析显示，随着处理时间的增加，质量数26的增加，指示CN的D1-D1离子。这些结果表明，高配位的CN_xD_1-CN_xD_1离子可以终止a-Si：H中的悬挂键，并抑制光诱导的悬挂键. LD TOF-MS对氧化物、氮化物和ZnS的分析与西姆斯一样灵敏，可以检测材料中的杂质。当我们考虑激光烧蚀薄膜沉积方法中到达生长表面的前体时，LD TOF-MS比西姆斯更合适。我们建立了ZnO靶材的清洗工艺，并利用LD TOF-MS研究了有望有效提供N作为p型ZnO掺杂剂的氮化物材料，遗憾的是，作为共掺杂剂的GaN双掺杂D22双掺杂D2和AlN双掺杂D22双掺杂D2前体几乎没有检测到。激光烧蚀ZnS材料时，证实了ZnS分子的前驱体。由于Zn和S的高蒸气压，传统的ZnS薄膜沉积温度低于300℃，而激光烧蚀可以在800℃沉积ZnS薄膜。

项目成果

H. koinuma: "Development of Amorphous field Effect Solar Cells with Ultra-high Efficiency"The Presentation on results concerning the International Joint Research Grant Program. 17-26 (1999)

H. koinuma：“超高效率非晶场效应太阳能电池的开发”关于国际联合研究资助计划结果的介绍。

K.Tamura: "Epitaxial growth of ZnO films on lattice-mached ScAIMgO_4 (0001) substrates"J.Cryst.Growth. (In press).

K.Tamura：“在晶格匹配的 ScAlMgO_4 (0001) 基板上外延生长 ZnO 薄膜”J.Cryst.Growth。

K.Miyazaki et al: "An ab-initio molecular-orbitaal analysis on the initial plasma CVD process of a-Si : H film on glass subatrate" THIN SOLID FILMS. 316. 134-138 (1998)

K.Miyazaki 等人：“对玻璃基板上的 a-Si : H 薄膜的初始等离子体 CVD 过程进行从头算分子轨道分析”薄固体薄膜。

K. Miyazaki et al.: "An ab-initio molecular-orbital analysis on the initial plasma CVD process of a-Si:H films on glass subatrate"Thin Solid Films. 316. 134-138 (1998)

K. Miyazaki 等人：“对玻璃基板上的 a-Si:H 薄膜的初始等离子体 CVD 过程进行从头算分子轨道分析”固体薄膜。

T.Ohnishi et al: "Coaxial impact-collision ion scatterring spectroscopy analysis of ZnO this films and single crystals" MATERIALS SCIENCE & ENGINEERING B. 56. 256-262 (1998)

T.Ohnishi 等人：“ZnO 薄膜和单晶的同轴碰撞碰撞离子散射光谱分析”材料科学