Control of the Structure and Electronic Structure of Organic/metal Interfaces and the Exploitation of the Electronic Functions

(1)从去年开始继续进行有机/金属界面的检查。对六苯基（6 P）与Au或Mg之间界面的形成进行了各种电子光谱技术的追踪，结果表明，6 P的生长方式明显依赖于金属，沉积在6 P表面的金属原子扩散到6 P层中，特别是在Au的情况下。在有机层中的可能的能带弯曲进行了检查，通过沉积TPD到不同的金属在真空下形成的界面。结果表明，在界面处形成厚度达100 nm的双电层后，没有能带弯曲。(2)在Alq 3上沉积Al作为阴极时，插入一层非常薄的LiF层，电子注入效率提高的起源。结果表明，（a）能级排列的变化，和（B）在直接接触的Al和Alq 3之间的强化学相互作用的去除的综合贡献。(3)本文将过去一年中在云母上沉积Au形成的Au（111）表面上烷烃的研究扩展到清洁结晶Cu（111）表面上的聚偏氟乙烯体系。红外反射-吸收光谱和角分辨紫外光电子能谱证实了薄膜的形成。使用这些数据，获得有关薄膜生长，有机/金属在界面上的相互作用，和分子内能带色散关系的详细信息。

(1) The examination of organic/metal interfaces was continued from the last year. The formation of interfaces between p-sexiphenyl (6P) and Au or Mg was pursued with various electronic spectroscopic techniques, and the results indicated that the growth mode of 6P is significantly dependent on the metal, and that the metal atoms deposited onto &P surface diffuse into the 6P player, in particular in the case of Au. The possible band bending in the organic layer was examined for interfaces formed by depositing TPD onto various metals under ultrahigh vacuum. The results show that there is no band bending after the completion of the formation of an electric double layer at the interface up to 100nm thickness.(2) The origin of the enhancement of electron injection efficiency at the insertion of a very thin layer of LiF at the deposition of Al onto Alq3 as the cathode. The results indicated combined contribution of (a) the change of energy level alignment, and (b) the removal of strong chemical interaction between Al and Alq3 at direct contact.(3) The study of alkane on Au(111) surface formed by depositing Au onto mica in the last year was extended to the system of poly(vinylidene fluoride) onto clean crystalline Cu(111) surface. The formation of well-oriented film was demonstrated by infrared reflection-absorption spectroscopy and angle-resolved UV photoelectron spectroscopy. Using these data, detailed information was obtained about the film growth, organic/metal interaction at the interface, and the intramolecular energy-band dispersion relation.