Study of Ultra High Frequency Surface Acoustic Wave Filters by the use of Diamond-cubic AIN Structure

金刚石立方AIN结构超高频声表面波滤波器的研究

• 批准号: 11650332
• 负责人: INUSHIMA Takashi
• 金额: $ 2.3万
• 依托单位: TOKAI UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650332/
• 关键词: SAW filter; Diamond; AlN; Thin film technology; MOCVD; Crystal growth at ECR point; Low temperature crystal growth; Surface acoustic wave velocity; ラム波

The research subject we studied in the fiscal year 2000 was to evaluate the p-type diamond as the SAW substrate and the deposition method of a thin film AlN grown on the diamond. The conduction mechanism of the heavily doped p-type diamond was analyzed. The diamond is a semiconductor with a wide band gap energy of 5.5 eV, and has a different conduction mechanism from that of Si and GaAs having a band gap energy of about 1 eV.When the impurity concentration increases, a new and shallower impurity level is formed due to the interaction between the impurities, and the carriers moves via this level. This mechanism was demonstrated by the use of a sandwich structure of lightly doped p-type diamond in between the heavily doped p-type diamonds with impurity band conduction (see the references (1), (5) and (6)).As for the deposition method for the AlN, we investigated two methods, one was the deposition at the resonance point of the nitrogen electron cyclotron plasma and the other was the conv … More entional metal organic chemical vapor deposition (MOCVD). By the use of MOCVD, we got good quality AlN at the deposition temperature of 1150℃. By the use of the former method, we succeeded in growing good quality AlN at the temperature lower than 600℃. This method enabled us to grow high quality AlN on metal Al hetero-epitaxially. By the use of this method, we fabricated AlN SAW filters onto the Al inter-digital-transducer (IDT) and we got the quality factor of 3 million at the fabricated SAW filter. This high quality factor is understood to be due to the Lamb wave excitation in the AlN thin film of uniform thickness. This result was reported at the International Workshop of Nitride (IWN 2000) at Nagoya (see reference (2,3)).To evaluate our computer simulation of the SAW filter, we made several SAW filters by the use of AlN grown on sapphire C-plane and on R-plane. The line and space of IDT was 1.3 μm. The fabricated SAW filters had a band-pass frequency of 1.1 GHz and SAW velocity of 5,620 km/s. These values were within 1.8% error of the estimated values (see reference (5)). From these investigations, we obtained plenty of data on how to grow cubic AlN onto p-type diamond. Less

2000年度的研究课题是作为SAW基板的p型金刚石和在金刚石上生长薄膜AlN的成膜方法的评价。分析了重掺杂p型金刚石的导电机理。金刚石是具有5.5eV的宽带隙能量的半导体，并且具有与具有约1 eV的带隙能量的Si和GaAs不同的导电机制。当杂质浓度增加时，由于杂质之间的相互作用而形成新的更浅的杂质能级，并且载流子经由该能级移动。本文通过在具有杂质带导的重掺杂p型金刚石之间采用轻掺杂p型金刚石的三明治结构来证明这一机理（见参考文献（1）、（5）和（6））。关于AlN的沉积方法，我们研究了两种方法，一种是在氮电子回旋等离子体共振点沉积，另一种是在氮电子回旋等离子体共振点沉积。在氮电子回旋等离子体共振点沉积时，我们研究了氮电子回旋等离子体共振点沉积和氮电子回旋等离子体共振点沉积两种方法。在氮电子回旋等离子体共振点沉积时，我们研究了氮电子回旋等离子体共振点沉积和氮电子回旋等离子体共振点沉积两种方法。在氮电子回旋等离子体共振点沉积时，我们研究了氮电子回旋等离子体共振点沉积和氮电子回旋等离子体共振点沉积两种方法 ...更多信息 金属有机化学气相沉积（MOCVD）。采用MOCVD方法，在1150℃的沉积温度下得到了质量较好的AlN薄膜。采用前一种方法，我们成功地在低于600℃的温度下生长出了质量良好的氮化铝。该方法使我们能够在金属Al上异质外延生长高质量的AlN。利用这种方法，我们在铝叉指换能器（IDT）上制作了AlN声表面波滤波器，并在制作的声表面波滤波器上获得了300万的品质因数。这种高品质因数被理解为是由于均匀厚度的AlN薄膜中的兰姆波激发。这一结果在名古屋的国际氮化物研讨会（IWN 2000）上发表（见参考文献（2，3））。为了评估我们对SAW滤波器的计算机模拟，我们使用在蓝宝石C面和R面上生长的AlN制作了几个SAW滤波器。IDT线间距为1.3 μm。制作的SAW滤波器的带通频率为1.1 GHz，SAW速度为5，620 km/s。这些值在估计值的1.8%误差范围内（见参考文献（5））。通过这些研究，我们获得了大量关于如何在p型金刚石上生长立方AlN的数据。少

项目成果

T.Inushima et al.,: "Heteroepitaxial growth of AlN at resonance point of nitrogen-ECR plasma"J.Crystal Growth. 209. 406-409 (2000)

T.Inushima 等人：“AlN 在氮 ECR 等离子体共振点的异质外延生长”J.Crystal Growth。

T.Inushhima et al.,: "Hopping Conductin via the Excited States of Boron in p-type Diamond"Diamond and Related Materials. 9. 1066-1070 (2000)

T.Inushhima 等人：“通过 p 型金刚石中硼的激发态进行跳跃传导”金刚石和相关材料。

T. Inushhima et al.,: "Hopping Conduction via the Excited States of Boron in p-type Diamond"Diamond and Related Materials. 10(In press). (2000)

T. Inushhima 等人：“通过 p 型金刚石中硼的激发态进行跳跃传导”金刚石和相关材料。

T.Inushhima et al.,: "Hopping Conduction via the Excited States of Boron in p-type Diamond"Diamond and Related Materials. 9. 1066-1070 (2000)

T.Inushhima 等人：“通过 p 型金刚石中硼的激发态进行跳跃传导”金刚石和相关材料。

T. Inushima et al.,: "Comparison of AlN thin films grown on Sapphire and cubic SiC substrates by LP-MOCVD"J. Crystal Growth. 209. 410-414 (2000)

T. Inushima 等人，“通过 LP-MOCVD 在蓝宝石和立方 SiC 衬底上生长的 AlN 薄膜的比较”J。