Study and application of s-d hybridization in the superconducting InN

在Mott转变附近，低载流子密度InN的超导电性表现为两种类型的超导转变。其中一种类型同时出现在电导和迈斯纳效应中，这与在高T_c超导体中观察到的类似。另一种是BCS型超导，其超导带隙类似于金属In。通过测量低温下的磁等离子体反射和磁阻，研究了费米面的结构。结果表明，在导带中存在两种类型的电子。为了解释这两种超导电性，提出了价带强S-d耦合引起的由S电子和d电子组成的剩余载流子模型。

The superconductivity of InN with low carrier density near the Mott transition shows two types of superconducting transitions. One type occurs in the electrical conduction and in Meissner effect simultaneously, which is similar to that observed in high Tcsuperconductors. The other is BCS-type superconductivity with the superconducting gap similar to that of metal In. The structure of the Fermi surface is investigated measuring magneto-plasma reflection and magneto- resistance at low temperatures. The results show that there are two types of electrons in the conduction band. In order to explain the two types of superconductivity, a model of residual carriers consisting s- and d-electrons caused by a strong s-d coupling in the valence band is presented.