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Semiconductor coupled SAW device

Semiconductor coupled SAW device
半导体耦合声表面波器件
批准号:
11650356
负责人:
HOHKAWA Kohji
金额:
$2.62万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2002

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中文摘要
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英文摘要
In this paper, we investigated SAW-semiconductor coupled integrated circuits, which have excellent characteristics compared to devices consisting of a simple combination of two kinds of devices. We have shown the following results.1) As the fabrication technology, we investigated Epitaxial-Lift-Off film bonding process for fabricating the SAW-semiconductor coupled integrated circuit and obtained following results : We have studied basic fabrication process ; higher speed and damage free semiconductor film peeling from its mother substrate, surface treatment for a tight bonding, clarification of bonding mechanism using X-ray topography, and some basic technologies for the way to the mass-productivity.2) Device technology : We studied the interaction between the electric field caused by the propagating SAW and carriers and potential field distribution in a semiconductor. Based on this study, we proposed new function devices such as optical signal controlled oscillator, a variable phase device, and etc. We also studied devices, which are useful for the functional devices for many kinds of high-speed wireless communication systems. We proposed a high performance convolver, variable correletor and verified theusefullness of these devices experimentally. We also proposed distributed semiconductor coupled analog processing SAW device, which will be useful in a future.
期刊论文(47)
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会议论文
S.Nam, Y.Aoki, C.Kaneshiro, K.Koh, K.Hohkawa: "A Trial for Integrating Front End Circuits on a Substrate of SAW Device Employing ELO"Proceedings on IEEE Ultrasonic Stmposium. (to be pubrished). (2001)
S.Nam、Y.Aoki、C.Kaneshiro、K.Koh、K.Hohkawa:“在采用 ELO 的 SAW 器件基板上集成前端电路的试验”IEEE 超声波研讨会论文集。
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T. Arai, M. Goto, K. Horikoshi, S. Mashino and S. Aikyo: "Effects of Fluorocarbon Films on CF Radical in CF_4/H_2 Plasma"Jpn. J. Appl. Phys.. Vol. 38. 4377-4379
T. Arai、M. Goto、K. Horikoshi、S. Mashino 和 S. Aikyo:“氟碳薄膜对 CF_4/H_2 等离子体中 CF 自由基的影响”Jpn。
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Chinami Kaneshiro, Tsutomu Nakajima, Ken-ichiro Miyadai, Yusuke Aoki, Keishin Koh, Kohji Hohkawa: "X-Ray Analysis of stress Distribution in Semiconductor Films Bonded to a Piezoelectric Sub strate"Jpn. J. Appl. Phys. Vol.41,No.6A. 4000-4006 (2002)
Chinami Kaneshiro、Tsutomu Nakajima、Ken-ichiro Miyadai、Yusuke Aoki、Keishin Koh、Kohji Hohkawa:“接合到压电基板的半导体薄膜中的应力分布的 X 射线分析”Jpn。
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43
    Study on Surface acoustic wave/semiconductor functional devices
    • 批准号:
      08650414
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $1.41万
    • 财政年份:
      1996
    • 负责人:
      HOHKAWA Kohji
    • 依托单位:
    海外基金