Semiconductor coupled SAW device
半导体耦合声表面波器件
基本信息
- 批准号:11650356
- 负责人:
- 金额:$ 2.62万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:1999
- 资助国家:日本
- 起止时间:1999 至 2002
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In this paper, we investigated SAW-semiconductor coupled integrated circuits, which have excellent characteristics compared to devices consisting of a simple combination of two kinds of devices. We have shown the following results.1) As the fabrication technology, we investigated Epitaxial-Lift-Off film bonding process for fabricating the SAW-semiconductor coupled integrated circuit and obtained following results : We have studied basic fabrication process ; higher speed and damage free semiconductor film peeling from its mother substrate, surface treatment for a tight bonding, clarification of bonding mechanism using X-ray topography, and some basic technologies for the way to the mass-productivity.2) Device technology : We studied the interaction between the electric field caused by the propagating SAW and carriers and potential field distribution in a semiconductor. Based on this study, we proposed new function devices such as optical signal controlled oscillator, a variable phase device, and etc. We also studied devices, which are useful for the functional devices for many kinds of high-speed wireless communication systems. We proposed a high performance convolver, variable correletor and verified theusefullness of these devices experimentally. We also proposed distributed semiconductor coupled analog processing SAW device, which will be useful in a future.
在本文中,我们研究了SAW半导体耦合集成电路,与由两种器件的简单组合组成的器件相比,它具有优异的特性。我们取得了以下成果: 1)作为制作技术,我们研究了外延剥离薄膜键合工艺来制作SAW-半导体耦合集成电路,并取得了以下成果:我们研究了基本的制作工艺;更高速且无损伤的半导体薄膜从母基板上剥离、紧密接合的表面处理、利用X射线形貌术阐明接合机制以及实现大规模生产的一些基本技术。2)器件技术:我们研究了传播SAW和载流子引起的电场之间的相互作用以及半导体中的势场分布。在此研究的基础上,我们提出了光信号控制振荡器、可变相位器件等新的功能器件。我们还研究了可用于多种高速无线通信系统的功能器件。我们提出了一种高性能卷积器、可变相关器,并通过实验验证了这些装置的实用性。我们还提出了分布式半导体耦合模拟处理 SAW 设备,这将在未来有用。
项目成果
期刊论文数量(47)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
S.Nam, Y.Aoki, C.Kaneshiro, K.Koh, K.Hohkawa: "A Trial for Integrating Front End Circuits on a Substrate of SAW Device Employing ELO"Proceedings on IEEE Ultrasonic Stmposium. (to be pubrished). (2001)
S.Nam、Y.Aoki、C.Kaneshiro、K.Koh、K.Hohkawa:“在采用 ELO 的 SAW 器件基板上集成前端电路的试验”IEEE 超声波研讨会论文集。
- DOI:
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- 影响因子:0
- 作者:
- 通讯作者:
T. Arai, M. Goto, K. Horikoshi, S. Mashino and S. Aikyo: "Effects of Fluorocarbon Films on CF Radical in CF_4/H_2 Plasma"Jpn. J. Appl. Phys.. Vol. 38. 4377-4379
T. Arai、M. Goto、K. Horikoshi、S. Mashino 和 S. Aikyo:“氟碳薄膜对 CF_4/H_2 等离子体中 CF 自由基的影响”Jpn。
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- 发表时间:
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- 影响因子:0
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T. Arai ,S. Aikyo and M. Goto: "Influence of Wall Heating on CF_2 Radical in CF4 Hollow Cathode Discharge Plasma"Czechoslovak Journal of Physics. Vol.50. 293-296 (2000)
T.荒井,S.
- DOI:
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- 影响因子:0
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- 通讯作者:
Chinami Kaneshiro, Tsutomu Nakajima, Ken-ichiro Miyadai, Yusuke Aoki, Keishin Koh, Kohji Hohkawa: "X-Ray Analysis of stress Distribution in Semiconductor Films Bonded to a Piezoelectric Sub strate"Jpn. J. Appl. Phys. Vol.41,No.6A. 4000-4006 (2002)
Chinami Kaneshiro、Tsutomu Nakajima、Ken-ichiro Miyadai、Yusuke Aoki、Keishin Koh、Kohji Hohkawa:“接合到压电基板的半导体薄膜中的应力分布的 X 射线分析”Jpn。
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- 影响因子:0
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Kohji Hohkawa, Takaya Suda, Yusuke Aoki, Chinami Kaneshiro and Keishin Koh: "Simulation Study on Semiconductor Coupled Surface Acoustic Wave Convolver through a Multi-Strip Electrodes"Jpn. J. Appl. Phys.. Vol. 40, No. 5B. 3740-3746 (2001)
Kohji Hohkawa、Takaya Suda、Yusuke Aoki、Chinami Kaneshiro 和 Keishin Koh:“通过多带电极对半导体耦合表面声波卷积器进行仿真研究”Jpn。
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- 影响因子:0
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HOHKAWA Kohji其他文献
HOHKAWA Kohji的其他文献
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{{ truncateString('HOHKAWA Kohji', 18)}}的其他基金
Study on Surface acoustic wave/semiconductor functional devices
声表面波/半导体功能器件研究
- 批准号:
08650414 - 财政年份:1996
- 资助金额:
$ 2.62万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
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