Magetoresistance Effect of Nanostructure Film Produced by Pulse Electrodeposition Method

纳米结构材料的物理性质研究在基础物理和应用方面都引起了广泛的关注。最近对铁磁和非磁性金属组合薄膜的磁阻（MR）的研究主要基于气相生长的薄膜，并且薄膜的磁阻根据其制备方法而表现出不同的值。电沉积是通过简单地控制电沉积条件来制备通常不混溶的金属组合的合金和金属多层膜的有利方法。然而，它提供了沉积膜结构的可能性不同的那些正在从vaporphase.In本研究中，我们已经调查了磁电阻效应和薄膜结构之间的关系，在纳米结构的多层膜制备的脉冲电沉积方法。

Research on physical properties of nanostructured materials ha attracted attention in term of fundamental physics and applications. Recent research on magneto-resistance (MR) for thin films produced in the combination of ferromagnetic and non-magnetic metals is based on films grown mainly from the vapor phase and the magnetoresistance of the films exhibits different values depending on their production method.Electrodeposition is an advantageous method for producing alloys and metallic multilayers of generally immiscible metal combinations simply by controlling the electrodeposition condition. However, it provides the possibility of depositing film structure different from those being produced from the vapor phase.In this study, we have investigated the relationships between the magetoresistance effect and the film structure in the nanostructured multilayered films prepared by the pulse electrodeposition method.