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Study of ultrahigh-frequency signal generation and processing using resonant tunneling chaos devices

利用谐振隧道混沌器件产生和处理超高频信号的研究

基本信息

批准号：
12650344
负责人：
MAEZAWA Koichi
金额：
$ 2.24万
依托单位：
NAGOYA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650344/
关键词：
chaos resonant tunneling HEMT InGaAs InP MMIG frequency divider bifurcation 集積回路 InAlAs

项目摘要

The purpose of this study is to fabricate ultrahigh-frequency chaos generator circuits using resonant tunneling diodes and to establish new signal generation/processing technologies using them.We mainly studied the forced Van der Pol oscillator, which is a simple circuit consisting of a resonant tunnelmg diode, a capacitor, and an inductor. This circuit outputs various signal patterns depending on the frequency, amplitude, and a bias voltage of the oscillating input. First, we confirmed the basic operation of the circuit by numerical simulation, and here we found that this circuit can be used as an ultra-high speed frequency divider. Next, we fabricated the monolithic microwave integrated circuits (MMICs) on InP substrates using RTD/HEMT integration technology. Then, we demonstrated high frequency operation of the circuits at frequencies as high as 50 GHz, The maximum is hmited by the HEMT used in the output buffer, so the extremely high frequency operation close to theoperation frequency cutoff frequency of the RTD is expected with appropriate circuit design.In addition to this another type of chaos generator circuit, the shift map chaos generator, was studied using CMOS RTD emulation circuit. We demonstrated its basic operations using VDEC (VLSI Design and Education Center) 0.6um CMOS chip fabrication program.

本研究的目的是利用共振隧道二极管制造超高频混沌产生电路，并利用它们建立新的信号产生/处理技术。我们主要研究了强制范德堡尔振荡器，它是一个简单的电路，由一个谐振隧道二极管、一个电容和一个电感组成。该电路根据振荡输入的频率、幅度和偏置电压输出各种信号模式。首先，我们通过数值模拟确认了电路的基本工作原理，在这里我们发现该电路可以作为超高速分频器使用。接下来，我们采用RTD/HEMT集成技术在InP衬底上制作单片微波集成电路（mmic）。然后，我们演示了电路在高达50 GHz频率下的高频工作，最大值受到输出缓冲器中使用的HEMT的限制，因此通过适当的电路设计，可以实现接近RTD工作频率截止频率的极高频率工作。在此基础上，利用CMOS RTD仿真电路研究了另一种混沌产生电路——移位映射混沌产生电路。我们使用VDEC （VLSI设计与教育中心）0.6um CMOS芯片制作程序演示了其基本操作。