Preparation of SiC thin film from polyamic acid by the reaction with SiO gas and its shape and property control

聚酰胺酸与SiO气体反应制备SiC薄膜及其形貌与性能控制

• 批准号: 12650672
• 负责人: UCHIYAMA Yasuo
• 金额: $ 1.86万
• 依托单位: Nagasaki University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650672/
• 关键词: polyamic acid; SiO gas; silicon carbide; vapor growth; shape control; property control; 気相合成

Preparation method : Polyamic acid (PAA) solution was obtained by reacting pyromellitic dianhydride with equimolar aromatic diamine, 4, 4' -oxydianiline, cast on a glass plate, and then imidized. Polyimide film obtained was removed from the plate and was reacted with SiO gas for 1 hour under Argon or in vacuo. By this method, beta-SiC was formed depending on thickness of the starting film, reaction time and heat treatment temperature after imidization. In the case of 8 μm thickness polyimide film, the film was silicidized completely.Shape control : PAA solution was painted on several substrates with different shapes and was reacted with SiO gas to prepare SiC with controlled shape. Due to the stress caused by shrinkage during imidization, polyimide film obtained was broken. Therefore, although shape of the SiC obtained succeed the shape of the carbon source, we can't obtained desired SiC with controlled shape.Property control : By adding boron or lanthanum during PAA preparation, we could obtained foreign element bearing polyimide. By reacting foreign element bearing polyimide film with SiO gas, we also could obtained foreign element bearing SiC film. Electrical resistivity of lanthanum bearing SiC film increases with an increase of temperature up to 400℃.

配制方法：均苯四甲酸二酐与等摩尔的芳香二胺、4，4' -二氨基二苯醚反应，得到聚酰胺酸（PAA）溶液，浇铸在玻璃板上，然后进行酰亚胺化。从板上取下所得聚酰亚胺膜，在氩气或真空下与SiO气体反应1小时。通过该方法，β-SiC的形成取决于起始膜的厚度、反应时间和酰亚胺化后的热处理温度。在8 μm厚聚酰亚胺薄膜的情况下，薄膜硅化完全。形状控制：将PAA溶液涂在几种不同形状的基底上，与SiO气体反应，制备形状可控的SiC。由于酰亚胺化过程中收缩引起的应力，所得聚酰亚胺膜破裂。因此，虽然所得到的SiC的形状与碳源的形状相吻合，但不能得到形状可控的SiC。性能控制：通过在PAA制备过程中添加硼或镧，可以得到含杂质的聚酰亚胺。利用含杂质的聚酰亚胺薄膜与SiO气体反应，也可以得到含杂质的SiC薄膜。含镧SiC薄膜的电阻率在400℃以下随温度的升高而增大。

项目成果

Y.Uchiyama, H.Tasaki, K.Kobayashi, H.Sano: "Preparation of β-sialon from silika-gel"Reports of the Faculty of Engineering, Nagasaki University, Vol.31, No.56. 137-141 (2001)

Y.Uchiyama、H.Tasaki、K.Kobayashi、H.Sano：“从硅胶中制备 β-sialon”长崎大学工学部报告，第 31 卷，第 137-141 期（2001 年） ）

Y.UCHIYAMA, N.URASE, T.HIGUCHI, H.SANO: "Proceedings of the 3rd International Syposium on Eco-Materials Processing and Design. Asan, Korea, Jan. 27-29(2002), pp. 18-21."Effect of Carbon Sources on Synthesis of β-SiC. 4 (2002)

Y.UHIYAMA、N.URASE、T.HIGUCHI、H.SANO：“第三届生态材料加工与设计国际研讨会论文集。韩国牙山，1 月 27-29 日（2002 年），第 18-21 页。 “碳源对β-SiC合成的影响。4（2002）

Y.Uchiyama, N.Urase, T.Higuchi, H.Sano: "Effect of Carbon Sources on Synthesis of β-SiC"Proc. of the 3rd International Symposium on Eco-Materials Processing & Design (ISPD). 18-21 (2002)

Y.Uchiyama、N.Urase、T.Higuchi、H.Sano：“碳源对 β-SiC 合成的影响”第三届国际生态材料加工与设计研讨会 (ISPD) 报告。 2002）

T.HIGUCHI, N.URASE, H.SANO, Y.UCHIYAMA: "Proceeding of the 18th International Japan-Korea Seminar on Ceramics, Kagoshima, Japan, Nov. 20-22(2001), pp. 176-180."Effect of Texture and Structure of Carbon Source Films on Formation of β-SiC Thin Film. 5 (2001

T.HIGUCHI、N.URASE、H.SANO、Y.UchiYAMA：“第 18 届国际日韩陶瓷研讨会论文集，日本鹿儿岛，11 月 20-22 日（2001 年），第 176-180 页。”效果碳源膜的织构和结构对β-SiC薄膜形成的影响5（2001年）

Y.Uchiyama, N.Urase, T.Higuchi, H.sano: "Effect of Texture and Structure of Carbon Sources on Synthesis of β-SiC Thin Film"Program and Abstracts of the 2nd International Symposium on Advanced Ceramics The Leading Materials in 21st Century. A303. 19-22 (20

Y.Uchiyama、N.Urase、T.Higuchi、H.sano：“碳源织构和结构对β-SiC薄膜合成的影响”21世纪第二届先进陶瓷国际研讨会议程及摘要世纪 A303。