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Study on high quality oxide formation

高质量氧化物形成的研究

基本信息

批准号：
12650697
负责人：
MATSUO Jiro
金额：
$ 2.3万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

Chemical reaction of cluster ions, which consist on a few to a few thousands of atoms, is quit different from ordinal chemical reaction of molecules, because of small many-body system. In this study, high quality oxide films, which are widely used for electron devices, optical components and super-conducting devices, are formed with cluster ion assisted technique.Extremely high pressure can be realized in surface collisions with many oxygen molecules, which are provided as a energetic cluster with the energy of a few eV/atoms. This condition can be retained more than 1ps and highly excited states of the oxygen molecules are happened collectively. The excited oxygen molecules are captured in oxide films very effectively. The energy to excite the molecules is a few eV, which is lower than formation energy of defects in substrates. Therefore, high quality oxides films without the defects are formed energetic cluster.The defects in the oxide films are investigated both with RBS, EXAFS and XRD experimentally, and Molecular Dynamic technique theoretically. Energy dependence of defect formation is examined in detail in order to study cluster ion collision on solid surfaces. According to EXAFS measurements, structure of amorphous Ti02 films grown at low temperature is rutile. Ti02 was epitaxially grown on A1203 at high temperature, which is a few hundreds lower than the temperature used in ordinary film formation technique.

团簇离子是由几个到几千个原子组成的小多体系统，其化学反应与一般的分子化学反应有很大的不同。本研究采用团簇离子辅助技术制备了高质量的氧化物薄膜，这些氧化物薄膜广泛应用于电子器件、光学元件和超导器件中，通过与许多氧分子的表面碰撞可以实现极高的压力，这些氧分子作为能量为几eV/原子的高能团簇提供。这种条件可以保持超过1 ps，并且氧分子的高激发态集体发生。被激发的氧分子被非常有效地捕获在氧化物膜中。激发分子的能量为几eV，低于衬底中缺陷的形成能量。本文采用RBS、EXAFS和XRD等实验手段对氧化膜中的缺陷进行了研究，并结合分子动力学技术对氧化膜中的缺陷进行了理论分析。为了研究团簇离子在固体表面上的碰撞，详细研究了缺陷形成的能量依赖性。根据EXAFS测量，在低温下生长的非晶Ti 〇 2膜的结构为金红石。TiO 2在高温下在Al 2 O3上外延生长，该温度比普通成膜技术中使用的温度低几百。