Study of Cluster Ion Analysis method?

团簇离子分析法的研究？

• 批准号: 14550025
• 负责人: MATSUO Jiro
• 金额: $ 1.79万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550025/
• 关键词: ion; cluster; secondary ion; SIMS; simulation; many-body collision; oxygen; sputtering

Secondary Ion Mass Spectrometry (SIMS) with Gas Cluster Ion Beams (GCIB) was investigated with experiments and molecular dynamics (MD) simulations. A new cluster SIMS system with high-intensity cluster ion source has been developed. Ar cluster ion beam with the average size of 2000 was utilized as a primary ion beam. The beam diameter is less than 1mm at the target position, and a current density of 10uA/cm^2 is obtained. The etch rate of Si with this current density is more than 20nm/min., which is far beyond the etch rate in recent low energy SIMS system. The secondary ion intensity linearly increases with the acceleration voltage. a threshold voltage of a few keV for secondary ion emission was found. These results are consistent with previous sputtering exveriments.Due to the dense energy deposition in a local area with cluster ion impacts, the ion-mixing effect is heavier than the same energy per atom of Ar monomer ion. The calculated sputtering yields with Ar_<10>^+ with a kinetic energy of 100eV/atom is about 1atoms/ion, which is one order of magnitude higher than those with Ar^+ at the same energy/atom. This indicates that cluster ion beam has a great capability to be utilized as a primary ion beam in high depth resolution SIMS with short analysis time.

通过实验和分子动力学 (MD) 模拟研究了气体团簇离子束 (GCIB) 二次离子质谱 (SIMS)。开发了一种具有高强度簇离子源的新型簇SIMS系统。使用平均尺寸为2000的Ar簇离子束作为一次离子束。目标位置处光束直径小于1mm，获得10uA/cm^2的电流密度。该电流密度下Si的刻蚀速率超过20nm/min，远远超出了目前低能SIMS系统的刻蚀速率。二次离子强度随加速电压线性增加。发现二次离子发射的阈值电压为几keV。这些结果与之前的溅射实验一致。由于簇离子撞击的局部区域有密集的能量沉积，离子混合效应比每个原子相同能量的Ar单体离子更重。计算出动能为100eV/原子的Ar_<10>^+的溅射产率约为1原子/离子，比相同能量/原子的Ar^+高一个数量级。这表明团簇离子束具有在高深度分辨率SIMS中用作初级离子束的强大能力，且分析时间短。

项目成果

N.Toyoda, J.Matsuo, T.Aoki, I.Yamada, D.B.Fenner: "Secondary ion mass spectrometry with gas cluster ion beams"Applied Surface Science. 203・204. 214-218 (2003)

N.Toyoda、J.Matsuo、T.Aoki、I.Yamada、D.B.Fenner：“使用气体团簇离子束的二次离子质谱”应用表面科学 203・204（2003 年）。

I.Yamada, J.Matsuo, N.Toyoda: "Cluster Ion Beam Processing 〜METI/NEDO Projects and Recent Progress〜"Proc. of 14th International Conference on Ion Implantation Technology. (2003)

I.Yamada、J.Matsuo、N.Toyoda：“簇离子束处理 ~METI/NEDO 项目和最新进展 ~”第 14 届国际离子注入技术会议 (2003)。

I.Yamada, J.Matsuo, N.Toyoda: "METI/NEDO Projects on Cluster Ion Beam Process Technology"Proc. of 17th international conference on the application of accelerators in research and industry (AIP Conference Proceedings, 680). 727-730 (2003)

I.Yamada、J.Matsuo、N.Toyoda：“METI/NEDO 集束离子束处理技术项目”Proc。

T.Kitagawa, K.Miyauchi, K.Kanda, Y.Shimizugawa, et al.: "Near Edge X-Ray Absorption Fine Structure Study for Optimization of Hard Diamond-Like Carbon Film Formation with Ar Cluster Ion Beam"Japanese Journal of Applied Physics. 42. 3971-3975 (2003)

T.Kitakawa、K.Miyauchi、K.Kanda、Y.Shimizukawa 等人：“Near Edge X 射线吸收精细结构研究，用于优化 Ar 簇离子束硬质类金刚石碳膜形成”日本应用杂志

T.Kitagawa, I.Yamada, N.Toyoda, H.Tsubakino, J.Matsuo, G.H.Takaoka, A.Kirkpatrick: "Hard DLC Film Formation by Gas Cluster Ion Beam Assisted Deposition"Nuclear Instruments and Methods in Physics Research B. 201. 405-412 (2003)

T.Kitakawa、I.Yamada、N.Toyoda、H.Tsubakino、J.Matsuo、G.H.Takaoka、A.Kirkpatrick：“通过气体团簇离子束辅助沉积形成硬质 DLC 薄膜”物理研究中的核仪器和方法 B.201