Strukturierung von H-passiviertem Si(100) mittels laserinduzierter Desorption zur Adsorption von organischen Molekülen in geordneten Mustern

使用激光诱导解吸结构化 H 钝化 Si(100) 以有序模式吸附有机分子

• 批准号: 5311676
• 负责人: Professor Dr. Eckart Hasselbrink
• 金额: --
• 依托单位: CENIDE - Center for Nanointegration
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2001
• 资助国家: 德国
• 起止时间: 2000-12-31 至 2004-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5311676?language=en
• 关键词: Strukturierung; von; passiviertem; Si; 100

Photo-induced reactions on H-terminated Si surfaces will be studied. VUV-Photoexcitation is provided by an F2-excimer laser. It will be explored whether VUV-photodesorption can be used for patterning of H-passivated Si surfaces. Adsorption of organic molecules on patterned and unpatterned surfaces will be studied with the goal to achieve selective adsorption such that patterned organic molecule arrays result. The structure in the substrate and/or of the adsorbed organic film will be probed on the 100 nm scale using Atomic Force Microscopy (AFM). High Resolution Electron Energy Loss Spectroscopy (HREELS) will shed light on the adsorption properties. The transition from VUVphotoinduced H-desorption under UHV conditions to laser direct writing in air will be studied. The later is a highly nonlinear process which may have a thermal as well as electronic mechanism. These experiments will also help to clarify the mechanism operative in local oxidation and patterning using an AFM in air.

我们将研究氢封端硅表面的光致反应。VUV光激发由F2准分子激光器提供。它将探讨是否VUV光解吸可用于H-钝化的Si表面的图案化。将研究有机分子在图案化和未图案化表面上的吸附，目标是实现选择性吸附，从而产生图案化的有机分子阵列。将使用原子力显微镜（AFM）在100 nm尺度上探测衬底和/或吸附的有机膜的结构。高分辨率电子能量损失谱（HREELS）将阐明吸附性能。研究了从超高真空光致氢解吸到空气中激光直写的转变。后者是一个高度非线性的过程，可能有热以及电子机制。这些实验也将有助于澄清在空气中使用AFM的局部氧化和图案化的机制。