Development of the semi conductor imaging spectrometer for hard X-ray and gamma-ray observations

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Based on single crystal growth by the Travelling Heater Method (THM-CdTe) wafers, we have developed CdTe detectors with high energy resolution for both planar and pixel configurations. We have demonstrated that the wafer shows good uniformity when we make a large area CdTe detector with planar electrodes. According to measurements using a collimated γ-ray beam from an ^<241>Am source, the location of the peak in the pulse height distribution is obtained to within 0.1 % and the variation of the area of the 60 keV peak is less than 0.9 %, regardless of the position in the 21 mm×21 mm surface. We have developed a large area CdTe pixel detectors. The detector has an area of 3.2 cm×3.2 cm and a thickness of 0.5 mm. Pixel size is 2 mm×2 mm. The energy resolution is 1.6 keV (FWHM) for 60 keV at 0 degree. In order to have ASIC with capabilities of both imaging and spectroscopy, we have developed o kinds of ASICs based on 0.35 μ CMOS technology. We have succeeded to demonstrate the readout scheme from pixels as well as the basic function of pulse processing.