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GENERATING AND ITS EVALUATION OF NANO-TEXTURE ON THE BASIS OF SELF-ORGANIZATION OF ATOMS AND PRE-PATTERNED NUCLEI

基于原子和预图案核自组织的纳米纹理的生成及其评估

基本信息

批准号：
13305013
负责人：
KAKUTA Akira
金额：
$ 30.12万
依托单位：
TOKYO METLOPOLITAN UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13305013/
关键词：
mono crystal silicon molecular beam epitaxy nano-texture

项目摘要

We have reported that free silicon molecules grew horizontally along a silicon substrate surface under a certain condition, so-called, a step-flow type growth, and could compose both a nano-meter order flatness and a perfect crystal structure by applying molecular Beam Epitaxy (MBE).In this study, it is clarified that the above mentioned step-flow type growth of silicon molecules can be either constrained or changed its growing direction by such geometrical patterns as regularly positioned micro-holes and grooves which are pre-shaped on the surface of silicon substrate before epitaxial deposition processes. As a result, the surface of silicon substrate can be textured at a nano-meter order.The mechanism of texturing is discussed in view of chemophysical deposition process and constriction of molecules under the step-flow depositing conditions. Micro steps are generated toward a certain orientation which is decided by a direction of substrate inclination and this growth is hindered by the pre-shaped pattern, hence, a square-like texture with a pitch of the pattern and a nano-meter order roughness inside of the texture patch is generated.It is revealed that various types of textured surfaces can be obtained by combining the pre-shaped geometrical patterns and depositing conditions. These silicon nano-textures are expected to be used for micro-optomechatronic contacts, replica surface of LIGA process and etc.

我们报道了利用分子束外延（MBE）技术，在一定条件下，自由硅分子沿硅衬底表面水平沿着生长，即所谓的阶梯流型生长，并可构成纳米级的平面度和完美的晶体结构。现澄清上述步骤-硅分子的流动型生长可以通过诸如规则定位的微孔和凹槽的几何图案来约束或改变其生长方向，在外延沉积工艺之前在硅衬底的表面上成形。从化学物理沉积过程和阶梯流沉积条件下分子收缩的角度讨论了织构化的机理。微台阶的生长受到预成形图形的阻碍，并向衬底倾斜方向生长，从而形成具有一定间距的方形织构，织构片内部具有纳米级的粗糙度，结合预成形几何图形和沉积条件，可以获得各种织构表面.这些硅纳米织构有望用于微光机电接触、LIGA工艺的复制表面等。