Generating of ultra precision mono crystal SiC smooth Surface by controlling of interface with substrate on MBE growth

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Silicon carbide (SiC) is highly expected as the next generation mechanical material owing to its high hardness, thermal resistance and semiconductive property. SiC can be used as a mechanical-electrical-optical component in both bulk and thin layers, such as reflection mirrors of laser and X-ray, surfaces of stamping die and high-performance bearings, etc. The author has achieved that mono-crystal thin SiC layer of up to 0.4nm rms surface roughness over 10μm length could be attained by the Si/carbon (C) hetero-MBE process, in which both of the evaporated molecular states of Si and C must be supplied to a Si substrate simultaneously under ultra- high vacuum. In those experiments, molecular Si was supplied by irradiating Electron Beam (EB) to a solid Si ingot and evaporating it, while C was supplied as pure acetylene gas that has the highest percentage of C involvement. Also, both of the evaporated molecular Si and C can be supplied by sputtering their solid bulk; hence, there are several kinds of combinations for supplying both Si and C molecules. However, it is not verified which surface properties are generated by different combinations and which conditions are effective in attaining the desired SiC. This study tested a series of combinations of supplying incident molecules under a wide range of operating conditions in SiC synthesis by MBE and some guidelines for the combination of supplying molecules and operating conditions were made clear in order to obtain the desired surface properties.