权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

DEVELOPMENT OF NANO-CBN THIN FILM DEVICES WORKING AT HIGH-TEMPERATURES UNDER SEVERE CONDITIONS

高温恶劣条件下纳米CBN薄膜器件的研制

基本信息

批准号：
13355028
负责人：
YOSHIDA Toyonobu
金额：
$ 32.2万
依托单位：
THE UNIVERSITY OF TOKYO
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13355028/
关键词：
CUBIC BORON NITRIDE THIN FILMS ELECTRONIC PROPERTIES HIGH TEMPERATURE ELECTRONICS N TYPE DOPINGS WIDE BANDGAP SEMICONDUCTOR VISCO-ELASTICITY RECTIFICATION CHARACTERISTICS BORON NITRIDE NANO ARRAY ドーピングワイドギャップ半導体特性ブラズマCVD スパッタリング

项目摘要

Increasing attention has been paid to the semiconductor devices that can work at high temperature. These devices will be applied to the control units for aircraft jet engines and giant power generators at higher operating temperatures, offering more efficient and reliable performances as the total system. Semiconductors with wide bandgap and high thermal conductivity can realize these applications in nature and GaN, SiC and Diamonds are listed as good candidates by many researchers. Among these, cubic boron nitride (cBN) has the widest bandgap in III-V and IV- group semiconductors as well as high chemical stability and thermal conductivity, and hence is considered to be the most suitable material for these applications. About 10 years ago, we succeeded to deposit such cBN thin films both by ICP-CVD and sputtering methods. Since then, we have been recognized as one of the leading groups. Based firmly on this proved track records in this field, important findings and advancements have be … More en achieved in this project.The first major achievement in this project is the fabrication of cBN thin films on silicon substrate suppressing amorphous interlayer formation. Such cBN growth only through the t-BN phase from silicon was realized by an invention of time-dependent-bias-technique (TDBT) using ICP-CVD method. Epitaxial growth of cBN on silicon will be a major breakthrough for the large area, high-quality synthesis of cBN in future, so this process will be essential to reach this goal.The discovery of the elastic deformation of boron nitride nano array (BNNA) in nano-scale is the second important finding, observed by the transmission electron microscopy (TEM). The peculiar deformation was caused in sp^2-bonded turbostratic boron nitride (tBN), built on a thin edge of silicon by ICP-CVD. The reversible minimum-bending curvature radius of the arrays was found to reach approximately 0.3 nm. Such an unique elastic deformation can not be explained by the conventional theory of deformation of ceramics and metals, and requires further investigation for thorough understandings of the mechanism. Still it can possess the potential of being applied in both MEMS and various nano-scale devices as shock absorber or relevant buffers.As the third major result, we have fabricated a prototype device of high temperature semiconductor with cBN to demonstrate the high potential and high quality of the films processed in a newly developed ultra-clean sputtering system. This device has the structure of heterojunction diode between cBN and silicon and has exhibited the rectification ratio over 10^4 at room temperature, capable of working up to 570K.From the above, it can be seen that considerable progress was made towards the overall goal of this project, and the results obtained so far clearly demonstrate the feasibility of this approach. Less

能够在高温下工作的半导体器件越来越受到人们的关注。这些器件将应用于工作温度更高的飞机喷气发动机和大型发电机的控制单元，作为整个系统提供更有效和可靠的性能。具有宽禁带和高热导率的半导体可以在自然界中实现这些应用，GaN，SiC和金刚石被许多研究人员列为良好的候选者。其中，立方氮化硼（cBN）在III-V族和IV族半导体中具有最宽的带隙以及高化学稳定性和热导率，因此被认为是最适合这些应用的材料。大约10年前，我们成功地通过ICP-CVD和溅射方法来存款这样的cBN薄膜。从那时起，我们就被公认为是领先的团体之一。基于这一领域的良好记录， ...更多信息本项目的第一个主要成果是在硅衬底上制备cBN薄膜，抑制非晶夹层的形成。这种cBN生长仅通过来自硅的t-BN相通过使用ICP-CVD方法的时间依赖偏压技术（TDBT）的发明来实现。在硅衬底上外延生长cBN将是未来大面积、高质量合成cBN的一个重大突破，因此这一工艺将是实现这一目标的关键。第二个重要发现是通过透射电子显微镜（TEM）观察到的氮化硼纳米阵列（BNNA）在纳米尺度上的弹性变形。这种特殊的变形是由ICP-CVD在硅的薄边缘上形成的sp^2键合的乱层氮化硼（tBN）引起的。发现阵列的可逆最小弯曲曲率半径达到约0.3 nm。这种独特的弹性变形不能用传统的陶瓷和金属变形理论来解释，需要进一步的研究来深入理解其机理。作为第三个主要结果，我们制作了一个cBN高温半导体的原型器件，以展示在新开发的超净溅射系统中加工的薄膜的高电势和高质量。该器件具有cBN和硅之间的异质结二极管结构，在室温下表现出超过10^4的整流比，能够工作到570 K。从以上可以看出，朝着该项目的总体目标取得了相当大的进展，到目前为止所获得的结果清楚地证明了这种方法的可行性。少