Next generation mesoplasma SIEMENS technology for direct production of wafer-equivalent thin film solar cells
Next generation mesoplasma SIEMENS technology for direct production of wafer-equivalent thin film solar cells
批准号:
21226017
负责人:
YOSHIDA Toyonobu
金额:
$103.17万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (S)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2012
中文摘要
该项目旨在开发下一代中间等离子体西门子技术,用于直接生产晶圆等效薄膜太阳能电池。特别注意理解的纳米团簇辅助快速外延的机制,也是激发的原子氢的绝对密度的原位测量,这两者都是中间等离子体的核心,以及具有成本效益的生产系统的技术发展。基于这些知识和理解,我们通过展示超快外延沉积的高材料产量,超过了西门子技术的动力学极限,证明了介观等离子体CVD的独特特性。
英文摘要
This project aims at the development of next generation mesoplasma SIEMENS technology for direct production of wafer-equivalent thin film solar cells. Special attentions were paid to understanding the mechanisms of the nano-cluster assisted fast rate epitaxy and also to an in-situ measurement of the absolute density of the excited atomic hydrogen, both of which are the core of the mesoplasma, together with the technological development of the cost effective production system. Based on these knowledge and understandings, we have proved the unique characteristics of mesoplasma CVD by demonstrating the ultrafast epitaxial deposition with high material yields that exceeds beyond the kinetics limit of the SIEMENS technology.
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Nano-cluster assisted high rate and high yield Si epitaxy
纳米团簇辅助高速率高良率硅外延
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[M. Kambara, L.W.Chen, S.D. Wu, T. Yoshida, (Invited)]
通讯作者:
(Invited)
ホームページ上での成果公開
在主页上公布结果
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Molecular Dynamics Simulation of Si Nano-Clusters in Mesoplasma High Rate And Low Temperature Epitaxy
中质硅纳米团簇高速低温外延的分子动力学模拟
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[L.W.Chen, M.Kambara, T.Yoshida]
通讯作者:
T.Yoshida
Feasibility study of mesoplasma CVD for direct production of high pure Si thin films from trichlorosilane
三氯氢硅介质CVD直接制备高纯硅薄膜的可行性研究
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[M.Kambara, J.Fukuda, T.Yamamoto, T.Yoshida]
通讯作者:
T.Yoshida
メゾプラズマ高速エピタキシー(招待講演)
间质快速外延(特邀报告)
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[H. Togashi, A. Ejiri, M. Hasegawa, J. Hiratsuka, Y. Nagashima, K. Nakamura, K. Narihara, Y. Takase, H. Tojo, N. Tsujii, I. Yamada, T. Yamaguchi, TST-2 Team, Reiji KUMAI, S.Kobayashi, K.Amemiya, 神原淳]
通讯作者:
神原淳
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Development of High-temperature cBN Thin Film DevicesFor Severe Environments
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批准号:16106009
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项目类别:Grant-in-Aid for Scientific Research (S)
-
资助金额:$72.63万
-
财政年份:2004
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负责人:YOSHIDA Toyonobu
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依托单位:
DEVELOPMENT OF NANO-CBN THIN FILM DEVICES WORKING AT HIGH-TEMPERATURES UNDER SEVERE CONDITIONS
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批准号:13355028
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$32.2万
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财政年份:2001
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负责人:YOSHIDA Toyonobu
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依托单位:
IN-SITU MEASUREMENT AND SIMULATION FOR DEFORMATION AND SOLIDIFICATION PHENOMENA OF SUPER-COOLED SINGLE DROPLET UNDER PLASMA SPRAY CONDITIONS (2002)
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批准号:12305048
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$30.18万
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财政年份:2000
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负责人:YOSHIDA Toyonobu
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依托单位:
海外基金