权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Chemical reaction control in nano-area by radiation -transformation of radiation physics to radiation chemistry -

辐射控制纳米区域化学反应-辐射物理向辐射化学的转化-

基本信息

批准号：
13358008
负责人：
TANABE Tetsuo
金额：
$ 27.21万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13358008/
关键词：
Nano-structure analysis Electron Energy loss spectroscopy EXAFS Radiation damage Lattice defects Energetic particle induced luminescence Effective utilization of Radiation Laser probe analysis 電子線エネルギー損失分光 X線広域吸収端微細構造分析

项目摘要

(1) New in situ analysis methods to study materials modification near surface regions brought by ion implantation were developed utilizing various radiation like electrons, ions, laser photons, as a probe.(2) Applying EXELFS and EELS, developed by this study, damage process of graphite was examined. It is clearly demonstrated that some new type of bonding different from sp^2 accompanying flouren type structure formation in both electron-and ion-irradiation.(3) Glazing incidence electron microscopy was also developed and successfully applied for the surface modification like a blister formation. A new blistering mechanism was proposed for covalent and semiconductor materials based on ductile transformation.(4) Molecular dynamic approach was applied to examine the swelling of SiC by ion irradiation and probed to be very effective. It was found that in SiC, an additional mechanism i.e. changes of bond length between Si-Si and Si-C atoms and bond angles of Si-C-Si is contributing the swelling in addition to the void swelling.(5) The nano-identation method was also applied to examine change of surface mechanical properties by ion implantation and the material strength in nanometer thickness was successfully extracted.(6) Appling various simulation codes, energy conversion or damaging process in nano-range was extensively studied. It was found that electron excitation play very important role in damaging process of covalent and semiconductor materials.(7) Energy conversion of γ-ray through production of secondary electrons and photons was successfully demonstrated. A new electric cell driven by γ-ray source was developed.

(1)利用电子、离子、激光光子等各种辐射作为探针，发展了研究离子注入材料近表面改性的原位分析新方法。(2)应用本研究开发的EXELFS和EELS，研究了石墨的损伤过程。结果表明，在电子和离子辐照下，伴随着芴类结构的形成，出现了一些不同于sp^2的新型成键。(3)玻璃入射电子显微镜也被开发并成功地应用于表面改性，如水泡的形成。提出了一种新的基于韧性相变的共价键和半导体材料的起泡机理。(4)用分子动力学方法研究了离子辐照对SiC的溶胀作用，发现该方法是有效的。结果表明，在SiC中，除了空洞膨胀外，Si-Si和Si-C原子间键长和Si-C-Si键角的变化也是导致膨胀的另一个机制。(5)采用纳米压痕法检测了离子注入对材料表面力学性能的影响，成功地提取了纳米厚度下的材料强度。(6)应用各种模拟程序，对纳米尺度下的能量转换或损伤过程进行了广泛的研究。发现电子激发在共价键材料和半导体材料的损伤过程中起着非常重要的作用。(7)成功地证明了γ射线通过产生二次电子和光子的能量转换。研制了一种新型的γ射线源驱动电池。