Preparation and Characterization of Crystalline Thin Films Belonging in the Cu-In-S System for High Conversion Efficiency Solar Cells

高转换效率太阳能电池 Cu-In-S 体系晶体薄膜的制备与表征

• 批准号: 13650006
• 负责人: KOBAYASHI Satoshi
• 金额: $ 2.3万
• 依托单位: NIIGATA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650006/
• 关键词: solar cell; CuInS_2; CuIn_5S_8; epitaxial growth; vacuum evaporation; Cu-Au structure; chalcopyrite structure; photoluminescence; 真空蒸着; X線回折; 高速電子線回折

The preparation and characterization of crystalline thin films belonging in the Cu-In-S system were performed as the basic study for high conversion efficiency solar cells. The films were grown on Si (001) wafers using a multisource evaporation method.Thin films of CuInS_2, CuIn_5S_8 and mixture of these were epitaxially grown when the In source temperature was varied. XRD and RHEED observation showed that the CuInS_2 film did not crystallize in the chalcopyrite structure, but in the Cu-Au structure with the c-axis normal to the substrate coexisting with the sphalerite structure. The CuIn_5S_8 film crystallized in the relaxed spinel structure with fairly good orientation. No evidence of CuIn_3S_5 was found from the XRD patterns.The Cu rich CuInS_2 films deposited at 500℃ crystallized in the chalcopyrite structure coexisting with the Cu-Au structure and/or sphalerite structure. In films with the stoichiometric composition, however, the chalcopyrite phase was not found.The photoluminescence (PL) spectra of films grown at 500℃ including chalcopyrite phase were measured at near 20K for the first time. In addition to the donor-acceptor pair emission, the weak and broad exitonic emissions were also observed. The photon energy and broadening of the emission are explained as the superposition of different emissions caused by the different crystal structure.The results obtained in this study will be useful for the growth of CuInS_2 films without extra phases except for the chalcopyrite structure which have never been grown.

本文对Cu-In-S体系晶体薄膜的制备和表征进行了研究，为高转换效率太阳能电池的研究奠定了基础。采用多源蒸发法在Si（001）硅片上生长薄膜。随着铟源温度的变化，CuInS_2、cuins_5s_8及其混合物的薄膜均外延生长。XRD和RHEED观察表明，CuInS_2薄膜不是黄铜矿结构结晶，而是c轴垂直于衬底的Cu-Au结构，并与闪锌矿结构共存。CuIn_5S_8薄膜结晶为取向良好的松弛尖晶石结构。XRD图中未发现CuIn_3S_5的存在。在500℃下沉积的富Cu CuInS_2薄膜结晶为黄铜矿结构，与Cu- au结构和/或闪锌矿结构共存。然而，在具有化学计量组成的薄膜中，没有发现黄铜矿相。在近20K温度下，首次测定了含黄铜矿相的500℃生长薄膜的光致发光光谱。除了供体-受体对发射外，还观察到弱和宽外子发射。光子的能量和发射的展宽被解释为不同晶体结构引起的不同发射的叠加。本文的研究结果对制备除黄铜矿结构外无其他相的CuInS_2薄膜具有一定的指导意义。

项目成果

Masato Watanabe: "Growth of CuInS_2 on Si Wafers by Three-Sources Vacuum Evaporation Method"Technical Report of IEICE (The Institute of Electronics, Information and Communication Engineers). CPM2001-99. 43-48 (2001)

Masato Watanabe：“通过三源真空蒸发法在硅片上生长 CuInS_2”IEICE（电子信息与通信工程师协会）的技术报告。

渡辺将人, 小林敏志, 坪井望, 大石耕一郎, 金子双男: "Si(100)上へのCuInS_2結晶薄膜の堆積"第49回応用物理学関係連合講演会講演予稿集. 第3分冊. 1435-1435 (2002)

Masato Watanabe、Satoshi Kobayashi、Nozomi Tsuboi、Koichiro Oishi、Futao Kaneko：“在 Si(100) 上沉积 CuInS_2 晶体薄膜”第 49 届应用物理协会会议论文集第 3 卷。1435 -1435 (2002)。

渡辺将人: "Si(100)上へのCuInS_2結晶薄膜の堆積"第49回応用物理学関係連合講演会講演予稿集. 第3分冊. 1435-1435 (2002)

Masato Watanabe：“在 Si(100) 上沉积 CuInS_2 晶体薄膜”第 49 届应用物理会议论文集第 3 卷。1435-1435 (2002)。

渡辺将人: "3元蒸着法によるSi基板上へのCuInS_2薄膜成長"信学技報 (電子情報通信学会). CPM2001. 43-48 (2001)

Masato Watanabe：“通过三元蒸发法在硅衬底上生长 CuInS_2 薄膜” IEICE 技术报告 (IEICE) 43-48 (2001)。