Pattern Transfer of 3-dimensional Fine Structures to the Si Substrate with expanding the Vertical Dimensions Using the Reactive Ion Etching

使用反应离子蚀刻将 3 维精细结构图案转移到硅基板并扩大垂直尺寸

• 批准号: 13650368
• 负责人: ITOH Kazuo
• 金额: $ 1.41万
• 依托单位: Gunma University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650368/
• 关键词: Expanded Pattern Transfer; 3-dimensional Structures; Reactive Ion Etching; Electron Beam Lithography; 形状転写; パターン転写

In this research, we aimed at developing a pattern transfer technique of 3-dimensional structures from a resist mask to a Si substrate with expanding their vertical dimensions. This key technique will be useful for fabricating a microlens and a micromachine etc. which need deeper vertical dimension than the resist thickness. Multi-level step structures were formed to a resist layer using the electron beam lithography with raster beam scan and multiplying exposures of different mask patterns. The pattern transfer was performed using the reactive ion etching utilizing the etching selectivity between the resist mask and the substrate.It is demonstrated that resist cross sections of multi-level steps can be transferred to Si substrates with expanding their vertical dimensions about 5 times by the RIE using SF_6 gas, while the cross sectional shapes were deformed by the pattern transfer. The isotropic nature of RIE degraded the quality of transferred patterns when their step widths were as fine as 1μm. These problems were improved by RIE with mixing CHF_3 (90%) gas to SF_6 (10%), whereas the degree of expanding the vertical dimension was decreased. It is also presented that the degree of expanded pattern transfer is controllable by changing the RF bias voltage at RIE process.

在本研究中，我们的目的是发展一种从抗蚀剂掩模到Si衬底的三维结构的图案转移技术，并扩展其垂直尺寸。这一关键技术将有助于制作垂直尺寸比抗蚀剂厚度更深的微透镜和微机械等。利用电子束光刻技术，通过光栅扫描和多次曝光不同的掩模图案，在光刻胶上形成了多层台阶结构。利用抗蚀剂掩模与衬底之间的选择性，采用反应离子刻蚀进行图形转移，结果表明，使用SF6气体的RIE可以将多级台阶的抗蚀剂截面转移到Si衬底上，其垂直尺寸扩大约5倍，而图形转移使抗蚀剂截面形状发生变形。RIE的各向同性特性使转移图形的质量下降，当它们的台阶宽度为1μm时。采用CHF_3（90%）和SF_6（10%）混合气体的反应离子刻蚀（RIE）工艺，可以改善上述问题，减小垂直尺寸的扩大程度。通过改变反应离子刻蚀工艺中的射频偏置电压，可以控制图形转移的扩展程度。

项目成果

Tomoaki Ubukata: "Pattern Transfer of Multi-step Structures to the Si Substrates Using Reactive Ion Etching"Extended Abstracts (The 50th Spring Meeting, 2003), The Japan Society of Applied Physics and Related Societies. 2. 801 (2003)

Tomoaki Ubukata：“使用反应离子蚀刻将多步结构图案转移到硅基板”扩展摘要（第 50 届春季会议，2003 年），日本应用物理学会及相关学会。

生方 朋章: "反応性イオンエッチングによる多段凹凸構造のSi基板への増幅転写"応用物理学関係連合講演会講演予稿集. 第50回・2. 801-801 (2003)

Tomoaki Ubukata：“通过反应离子蚀刻将多级不平坦结构放大转移到硅基板上”应用物理学会讲座会议记录第 50 期 2. 801-801 (2003)。

Kazuo Itoh: "Pattern Transfer of 3-dimensional Fine Structures to the Si Substrates Using Reactive Ion Etching"2002 Annual Report of Gunma University, Satellite Venture Business Laboratory. 7. 56-59 (2003)

Kazuo Itoh：“使用反应离子蚀刻将 3 维精细结构图案转移到硅基板”2002 年群马大学卫星创业商业实验室年度报告。

伊藤 和男: "反応性イオンエッチングによるSi基板への三次元微細構造の増幅転写技術の開発"群馬大学サテライト・ベンチャービジネス・ラボラトリー 平成14年度年報. 第7号. 56-59 (2003)

伊藤一夫：“通过反应离子蚀刻将三维微结构放大转移到硅基板上的技术的开发”群马大学卫星创业商业实验室2002年年度报告第7. 56-59号（2003年）。

生方 朋章: "反応性イオンエッチングによる多段凹凸構造のSi基板への増幅転写"応用物理学関係連合講演会予稿集. 第50回No.2. 801-801 (2003)

Tomoaki Ubukata：“通过反应离子蚀刻将多级不平坦结构放大转移到硅衬底上”应用物理协会会议记录第 50 期第 2. 801-801 (2003)。