Development of zirconia film oxygen sensor controlled with piezoelectric material

压电材料控制氧化锆薄膜氧传感器的研制

• 批准号: 13650729
• 负责人: MASUMOTO Hiroshi
• 金额: $ 2.18万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650729/
• 关键词: piezoelectric material; barium titanate; lead zirconate titanate; ion conductivity; complex impedance; yttoria stabilized zirconia; vibration dependence; multi-functional film; 振動依存性; イツトリア安定化ジルコニア; 酸素センサー

In this research, it succeeded in the improvement of electric conductivity of yttoria stabilized zirconia (YSZ) by using the vibration caused by a piezoelectric device to develop the oxygen ion sensor which worked at the low temperature.1. YSZ thin film was prepared by the MOCVD method used Zr(DPM)_4 and Y(DPM)_3 as sauces. The YSZ film had the ionic conduction because the semicircle and the spike had been admitted on the low frequency and the high frequency respectively in the complex impedance measurement.2. Read zirconate titanate (PZT) films which was the piezoelectric material were prepared by RF-sputtering method, and the relationship between experimental conditions, structure, and morphology and the ferroelectric characteristic of the films were investigated.3. Barium titanate (BTO : BaTiO_3) films were prepared by MOCVD using Ba(DPM)_2 and Ti(O-i-C_3H_7)_2(DPM)_2 as sauces. The ionic-conduction/piezoelectric multi-functional film composed of the YSZ/BTO/Pt/MgO film was fabricated. The morphology of BTO was compact, and of YSZ was a columnar-shaped structure.4. The YSZ/piezoelectric multi-functional film was fabricated, and the effect of the piezoelectric vibration on the electric characteristic of the YSZ film were investigated.(1) The impedance of the YSZ thin film was decreased with increasing amplitude of the piezoelectric vibration.(2) Conductivity of the YSZ thin film vibrated by the piezoelectric vibration (frequency 115kHz, 40V in the voltage) conductivity is about 2×10^<-6>Ω^<-1>m^<-1>.at 90℃. The value of this conductivity was about one digit or more higher than that of the no vibration YSZ thin film. It was suggested to be able to increase conductivity of the YSZ thin film by the piezoelectric vibration.The reason that conductiveity of YSZ increases by the piezoelectric vibration is researching now.

本研究成功地利用压电元件产生的振动来改善氧化钇稳定氧化锆（YSZ）的电导率，研制出低温下工作的氧离子传感器.以Zr（Ⅲ）_4和Y（Ⅲ）_3为原料，采用MOCVD方法制备了YSZ薄膜。由于复阻抗测量中分别在低频和高频处允许半圆和尖峰，因此YSZ薄膜具有离子导电性。2.采用射频溅射法制备了压电材料锆钛酸盐（PZT）薄膜，研究了实验条件、结构、形貌与薄膜铁电特性的关系.以Ba（OH）_2和Ti（O-i-C_3H_7）_2（OH）_2为原料，采用MOCVD方法制备了钛酸钡（BTO：BaTiO_3）薄膜。制备了由YSZ/BTO/Pt/MgO薄膜组成的离子导电/压电多功能薄膜。BTO形貌致密，YSZ为柱状结构.制备了YSZ/压电复合多功能薄膜，研究了压电振动对YSZ薄膜电学特性的影响。(1)YSZ薄膜的阻抗随着压电振动振幅的增大而减小。(2)在压电振动（频率115 kHz，电压40 V）作用下，YSZ薄膜的电导率在90℃时约为2×10^<-6>Ω·<-1>m ~<-1>（-1）。该电导率的值比无振动的YSZ薄膜的电导率高约一位数或更多。压电振动可以提高YSZ薄膜的电导率，压电振动提高YSZ薄膜电导率的原因正在研究中。

项目成果

H. Sugai, T. Iijima and H. Masumoto: "Preparation of lead titanate and PZT ultra-thin film using Langmuir-Blodgett film as precursor"Proc. 2000 12th IEEE Int. Symp. Applications of Ferroelectrics (ISAF 2000). II. 917-920 (2001)

H. Sugai、T. Iijima 和 H. Masumoto：“以 Langmuir-Blodgett 薄膜为前驱体制备钛酸铅和 PZT 超薄膜”Proc。

R.Tu, T.Kimura, T.Goto: "Rapid synthesis of yttria-partially-stabilized zirconia films by metal-organic chemical vapor deposition"Mater.Trans.. 43. 2354-2356 (2002)

R.Tu、T.Kimura、T.Goto：“通过金属有机化学气相沉积快速合成氧化钇部分稳定的氧化锆薄膜”Mater.Trans.. 43. 2354-2356 (2002)

T.Akashi, K.Morita, T.Hirai, H.Yamane, T.Goto: "Phase relationship in a BaO-Bi_2O_3-TiO_2 system and electrical properties of BaTiO_3 with addition of Bi_4Ti_3O_<12>"Mater. Trans. 42. 1823-1826 (2001)

T.Akashi、K.Morita、T.Hirai、H.Yamane、T.Goto：“BaO-Bi_2O_3-TiO_2 体系中的相关系以及添加 Bi_4Ti_3O_<12> 后 BaTiO_3 的电性能”材料。

T.Tohma, H.Masumoto, T.Goto: "Microstructure and dielectric properties of barium titanate film Prepared by MOCVD"Mater. Trans. 43. 2880-2884 (2002)

T.Tohma、H.Masumoto、T.Goto：“MOCVD 制备的钛酸钡薄膜的微观结构和介电性能”材料。

H. Masumoto, A. Kojima, T. Iijima and T. Goto: "Preparation of Ag-alloy top-electrode for ferroelectric Pb(Zr,Ti)O_3 films under various atmospheres"Jpn. J. Appl. Phys.. 41. 6882-6885 (2002)

H. Masumoto、A. Kojima、T. Iijima 和 T. Goto：“不同气氛下铁电 Pb(Zr,Ti)O_3 薄膜银合金顶电极的制备”Jpn。