Development of zirconia film oxygen sensor controlled with piezoelectric material

在本研究中，利用压电式器件产生的振动，研制了工作在低温下的氧离子传感器，成功地提高了氧化钇稳定氧化锆(YSZ)的电导率。以Zr(DPM)_4和Y(DPM)_3为原料，采用MOCVD法制备了YSZ薄膜。在复阻抗测量中，YSZ薄膜在低频和高频分别出现了半圆形和尖峰，因此具有离子导电性。采用射频溅射法制备了钛酸锆酸盐(PZT)薄膜，研究了实验条件、结构、形貌与薄膜铁电性能的关系。以BaO(DPM)2和Ti(O-i-C3H7)2(DPM)2为原料，采用MOCVD法制备了BaTiO3(BTO：BaTiO3)薄膜。制备了由YSZ/BTO/Pt/MgO薄膜组成的离子导电/压电多功能薄膜。BTO的形貌致密，YSZ为柱状结构。制备了YSZ/压电多功能薄膜，研究了压电振动对YSZ薄膜电学特性的影响：(1)YSZ薄膜的阻抗随压电振幅值的增大而减小，(2)在频率为115 kHz，电压为40V时，YSZ薄膜的电导率约为2×10^&lt；-6&gt；Ω^&lt；-1&gt；m^&lt；-1&gt；在90℃。该电导率比无振动YSZ薄膜的电导率高出一位数甚至更多。认为可以通过压电振动来提高YSZ薄膜的电导率，目前正在研究通过压电振动来提高YSZ薄膜电导率的原因。

In this research, it succeeded in the improvement of electric conductivity of yttoria stabilized zirconia (YSZ) by using the vibration caused by a piezoelectric device to develop the oxygen ion sensor which worked at the low temperature.1. YSZ thin film was prepared by the MOCVD method used Zr(DPM)_4 and Y(DPM)_3 as sauces. The YSZ film had the ionic conduction because the semicircle and the spike had been admitted on the low frequency and the high frequency respectively in the complex impedance measurement.2. Read zirconate titanate (PZT) films which was the piezoelectric material were prepared by RF-sputtering method, and the relationship between experimental conditions, structure, and morphology and the ferroelectric characteristic of the films were investigated.3. Barium titanate (BTO : BaTiO_3) films were prepared by MOCVD using Ba(DPM)_2 and Ti(O-i-C_3H_7)_2(DPM)_2 as sauces. The ionic-conduction/piezoelectric multi-functional film composed of the YSZ/BTO/Pt/MgO film was fabricated. The morphology of BTO was compact, and of YSZ was a columnar-shaped structure.4. The YSZ/piezoelectric multi-functional film was fabricated, and the effect of the piezoelectric vibration on the electric characteristic of the YSZ film were investigated.(1) The impedance of the YSZ thin film was decreased with increasing amplitude of the piezoelectric vibration.(2) Conductivity of the YSZ thin film vibrated by the piezoelectric vibration (frequency 115kHz, 40V in the voltage) conductivity is about 2×10^<-6>Ω^<-1>m^<-1>.at 90℃. The value of this conductivity was about one digit or more higher than that of the no vibration YSZ thin film. It was suggested to be able to increase conductivity of the YSZ thin film by the piezoelectric vibration.The reason that conductiveity of YSZ increases by the piezoelectric vibration is researching now.