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Preparation of Ag-alloy top-electrode for ferrolectric films.

Preparation of Ag-alloy top-electrode for ferrolectric films.
铁电薄膜银合金顶电极的制备。
批准号:
12555174
负责人:
MASUMOTO Hiroshi
金额:
$2.37万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2002

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中文摘要
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英文摘要
An Ag-alloy (97Ag-1Pd-2Cu in mol%) was proposed as a new top-electrode for lead zirconate titanate (PZT) films.1. The composition of the Ag-alloy was examined. The insulation resistance of the electrode has improved to the electrode of the composition which adds Pd of 0.1% or more to the pure silver. A heat-resistant, the insulation resistance, and adhesion characteristic have improved to the electrode of the composition which does Cu from 0.1 to 5% to the virgin silver.2. PZT ferroelectric thin film was prepared on the Pt/Ti/SiO_2/Si substrate by chemical solution deposition method (CSD method). Pt and the Ag-alloy top-electrode of 0.5mm in the diameter were made on this PZT thin film by the sputtering method. The obtained film was heat-treated by the oxygen and hydrogen atmosphere (N_2-4%H_2), and the following knowledge was obtained.(1) Oxygen atmosphereIt has been understood for both Pt and the Ag-alloy electrode to be able to maintain excellent ferroelectricity up to 500℃.(2) Hydrogen atmosphereIn the case of Pt top-electrode, the ferroelectricity of PZT films disappeared after annealing over 3CO℃. Exfoliations of Pt bottom-electrode from substrate were observed after annealing over 300℃.In the case of the Ag-alloy top-electrode, no chemical reaction between the Ag-alloy electrode and PZT film was observed after annealing at 400℃. The ferroelectricity of PZT film was maintain ed even after annealing at 350℃ using the Ag-alloy electrode.It is guessed that the Ag alloy electrode developed by this research can be used as new electrode for ferroelectric materials.
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T. Goto, T. Hirai and T. Ono: "Ir cluster films prepared by MOCVD as an electrode for a gas sensor"Mater. Res. Soc. Jpn.. 25. 225-228 (2000)
T. Goto、T. Hirai 和 T. Ono:“通过 MOCVD 制备的 Ir 簇薄膜作为气体传感器的电极”Mater。
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T. Goto, T. Ono and T. Hirai.: "Electrochemical properties of iridium-carbon nano composite films prepared by MOCVD"Scripta Mater.. 44. 1187-1190 (2001)
T. Goto、T. Ono 和 T. Hirai.:“MOCVD 制备的铱-碳纳米复合薄膜的电化学性能”Scripta Mater.. 44. 1187-1190 (2001)
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T.Akashi, K.Morita, T.Hirai, H.Yamane, T.Goto: "Phase relationship in a BaO-Bi_2O_3-TiO_2 system and electrical properties of BaTiO_3 with addition of Bi_4Ti_3O_<12>"Mater. Trans. 42. 1823-1826 (2001)
T.Akashi、K.Morita、T.Hirai、H.Yamane、T.Goto:“BaO-Bi_2O_3-TiO_2 体系中的相关系以及添加 Bi_4Ti_3O_<12> 后 BaTiO_3 的电性能”材料。
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