Preparation of Ag-alloy top-electrode for ferrolectric films.
铁电薄膜银合金顶电极的制备。
基本信息
- 批准号:12555174
- 负责人:
- 金额:$ 2.37万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2000
- 资助国家:日本
- 起止时间:2000 至 2002
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
An Ag-alloy (97Ag-1Pd-2Cu in mol%) was proposed as a new top-electrode for lead zirconate titanate (PZT) films.1. The composition of the Ag-alloy was examined. The insulation resistance of the electrode has improved to the electrode of the composition which adds Pd of 0.1% or more to the pure silver. A heat-resistant, the insulation resistance, and adhesion characteristic have improved to the electrode of the composition which does Cu from 0.1 to 5% to the virgin silver.2. PZT ferroelectric thin film was prepared on the Pt/Ti/SiO_2/Si substrate by chemical solution deposition method (CSD method). Pt and the Ag-alloy top-electrode of 0.5mm in the diameter were made on this PZT thin film by the sputtering method. The obtained film was heat-treated by the oxygen and hydrogen atmosphere (N_2-4%H_2), and the following knowledge was obtained.(1) Oxygen atmosphereIt has been understood for both Pt and the Ag-alloy electrode to be able to maintain excellent ferroelectricity up to 500℃.(2) Hydrogen atmosphereIn the case of Pt top-electrode, the ferroelectricity of PZT films disappeared after annealing over 3CO℃. Exfoliations of Pt bottom-electrode from substrate were observed after annealing over 300℃.In the case of the Ag-alloy top-electrode, no chemical reaction between the Ag-alloy electrode and PZT film was observed after annealing at 400℃. The ferroelectricity of PZT film was maintain ed even after annealing at 350℃ using the Ag-alloy electrode.It is guessed that the Ag alloy electrode developed by this research can be used as new electrode for ferroelectric materials.
提出了一种银合金(97 Ag-1 Pd-2Cu,mol%)作为锆钛酸铅(PZT)薄膜的新型上电极.检查了银合金的组成。对于在纯银中添加0.1%以上的Pd的组合物的电极,电极的绝缘电阻得到改善。具有相对于纯银添加0.1 ~ 5%的Cu的组合物的电极的耐热性、绝缘电阻、粘接性提高.采用化学溶液沉积法(CSD)在Pt/Ti/SiO_2/Si基片上制备了PZT铁电薄膜。用溅射法在PZT薄膜上制备了直径为0.5mm的Pt和Ag合金上电极。将所得膜在氧和氢气氛(N_2-4%H_2)中热处理,并获得以下知识。(1)氧气气氛据了解,铂和银合金电极在500℃以下都能保持优异的铁电性。(2)氢气氛对于Pt上电极,PZT薄膜的铁电性在30 ℃以上退火后消失。当退火温度超过300℃时,Pt下电极与衬底发生剥离,而Ag合金上电极经400℃退火后,Ag合金电极与PZT薄膜之间没有发生化学反应。PZT薄膜经350℃退火后仍保持艾德的铁电性,推测本研究开发的银合金电极可作为铁电材料的新型电极。
项目成果
期刊论文数量(48)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T. Goto, T. Hirai and T. Ono: "Ir cluster films prepared by MOCVD as an electrode for a gas sensor"Mater. Res. Soc. Jpn.. 25. 225-228 (2000)
T. Goto、T. Hirai 和 T. Ono:“通过 MOCVD 制备的 Ir 簇薄膜作为气体传感器的电极”Mater。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
T. Goto, T. Ono and T. Hirai.: "Electrochemical properties of iridium-carbon nano composite films prepared by MOCVD"Scripta Mater.. 44. 1187-1190 (2001)
T. Goto、T. Ono 和 T. Hirai.:“MOCVD 制备的铱-碳纳米复合薄膜的电化学性能”Scripta Mater.. 44. 1187-1190 (2001)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
H. Sugai, T. Iijima and H. Masumoto: "Preparation of lead titanate and PZT ultra-thin film using Langmuir-Blodgett film as precursor"Proc. 2000 12th IEEE Int. Symp. Applications of Ferroelectrics (ISAF 2000). II. 917-920 (2001)
H. Sugai、T. Iijima 和 H. Masumoto:“以 Langmuir-Blodgett 薄膜为前驱体制备钛酸铅和 PZT 超薄膜”Proc。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
T.Akashi, K.Morita, T.Hirai, H.Yamane, T.Goto: "Phase relationship in a BaO-Bi_2O_3-TiO_2 system and electrical properties of BaTiO_3 with addition of Bi_4Ti_3O_<12>"Mater. Trans. 42. 1823-1826 (2001)
T.Akashi、K.Morita、T.Hirai、H.Yamane、T.Goto:“BaO-Bi_2O_3-TiO_2 体系中的相关系以及添加 Bi_4Ti_3O_<12> 后 BaTiO_3 的电性能”材料。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
T.Tohma, H.Masumoto, T.Goto: "Microstructure and dielectric properties of barium titanate film Prepared by MOCVD"Mater. Trans. 43. 2880-2884 (2002)
T.Tohma、H.Masumoto、T.Goto:“MOCVD 制备的钛酸钡薄膜的微观结构和介电性能”材料。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
MASUMOTO Hiroshi其他文献
多孔質Mn3O4/C複合粒子によるコンバージョン型リチウムイオン二次電池負極のサイクル性能向上
使用多孔Mn3O4/C复合颗粒改善转换型锂离子二次电池负极的循环性能
- DOI:
- 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
SHIRAISHI Naru;MASUMOTO Hiroshi;TAKAHASHI Kenta;TENKUMO Taichi;ANADA Takahisa;SUZUKI Osamu;OGAWA Toru;SASAKI Keiichi;中山将伸;小澤隆弘,北林史弥,福山香代,内藤牧男 - 通讯作者:
小澤隆弘,北林史弥,福山香代,内藤牧男
Histomorphometric assessments of peri-implant bone around Ti-Nb-Sn alloy implants with low Young’s modulus
低杨氏模量 Ti-Nb-Sn 合金种植体周围种植体周围骨的组织形态计量学评估
- DOI:
10.4012/dmj.2018-376 - 发表时间:
2020 - 期刊:
- 影响因子:2.5
- 作者:
SHIRAISHI Naru;MASUMOTO Hiroshi;TAKAHASHI Kenta;TENKUMO Taichi;ANADA Takahisa;SUZUKI Osamu;OGAWA Toru;SASAKI Keiichi - 通讯作者:
SASAKI Keiichi
新しい材料モデルによる超音速衝突結合現象の数値解析
使用新材料模型对超音速碰撞耦合现象进行数值分析
- DOI:
- 发表时间:
2020 - 期刊:
- 影响因子:0
- 作者:
SHIRAISHI Naru;MASUMOTO Hiroshi;TAKAHASHI Kenta;TENKUMO Taichi;ANADA Takahisa;SUZUKI Osamu;OGAWA Toru;SASAKI Keiichi;中山将伸;小澤隆弘,北林史弥,福山香代,内藤牧男;麻寧緒,Qian Wang - 通讯作者:
麻寧緒,Qian Wang
Liイオン導電性 NASICON型材料の固固界面構造と材料計算
锂离子导电NASICON型材料的固-固界面结构及材料计算
- DOI:
- 发表时间:
2021 - 期刊:
- 影响因子:0
- 作者:
SHIRAISHI Naru;MASUMOTO Hiroshi;TAKAHASHI Kenta;TENKUMO Taichi;ANADA Takahisa;SUZUKI Osamu;OGAWA Toru;SASAKI Keiichi;中山将伸 - 通讯作者:
中山将伸
Effect of surface modification of Ti-6Al-4V alloy by electron cyclotron resonance plasma oxidation
电子回旋共振等离子体氧化对Ti-6Al-4V合金表面改性的影响
- DOI:
10.4012/dmj.2020-051 - 发表时间:
2021 - 期刊:
- 影响因子:2.5
- 作者:
OIKAWA Mayumi;MASUMOTO Hiroshi;SHIRAISHI Naru;ORII Yusuke;ANADA Takahisa;SUZUKI Osamu;SASAKI Keiichi - 通讯作者:
SASAKI Keiichi
MASUMOTO Hiroshi的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('MASUMOTO Hiroshi', 18)}}的其他基金
Establishment and application of SXP-MS analysis
SXP-MS分析方法的建立及应用
- 批准号:
15K14461 - 财政年份:2015
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Analysis of mechanism involved in the assembly balance between centromere chromatin and/or heterochromatin and in higher cellular regulation.
分析着丝粒染色质和/或异染色质之间的组装平衡以及高级细胞调节所涉及的机制。
- 批准号:
23247030 - 财政年份:2011
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
The analysis of basic chromosomal functions using human artificial chromosomes (HACs) and the development of novel HACs.
使用人类人工染色体 (HAC) 分析基本染色体功能以及新型 HAC 的开发。
- 批准号:
20247019 - 财政年份:2008
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Preparation of multiferroic thin film by low temperature vapor deposition
低温气相沉积制备多铁性薄膜
- 批准号:
19360292 - 财政年份:2007
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Low temperature preparation of nano composite thin films for titania-systems by ECR plasma CVD.
ECR 等离子体 CVD 低温制备二氧化钛系统纳米复合薄膜。
- 批准号:
16360321 - 财政年份:2004
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of zirconia film oxygen sensor controlled with piezoelectric material
压电材料控制氧化锆薄膜氧传感器的研制
- 批准号:
13650729 - 财政年份:2001
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Construction of mammalian artificial chromosomes using YAC
使用 YAC 构建哺乳动物人工染色体
- 批准号:
09044213 - 财政年份:1997
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for international Scientific Research
Structural and Functional Analyzes of Human Artificial Chromosomes
人类人工染色体的结构和功能分析
- 批准号:
09480185 - 财政年份:1997
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of Human Artificial Chromosome
人类人工染色体的研制
- 批准号:
06044273 - 财政年份:1994
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Overseas Scientific Survey.
相似海外基金
Theoretical Study on Low-Power Neural Network Devices with High-Error Nonvolatile Memory
高误差非易失性存储器低功耗神经网络器件的理论研究
- 批准号:
20K12003 - 财政年份:2020
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Developement of nonvolatile memory devices utilizing charge-glass and charge-crystal states realized in strongly correlated pi-electron systems
利用强相关π电子系统中实现的电荷玻璃态和电荷晶态开发非易失性存储器件
- 批准号:
18H01853 - 财政年份:2018
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of high-speed nonvolatile memory using intersubband transitions in GaN-based resonant tunneling diodes
利用基于 GaN 的谐振隧道二极管的子带间跃迁开发高速非易失性存储器
- 批准号:
17K06409 - 财政年份:2017
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
SHF:Small:Data Structures and Transactions for Emerging Nonvolatile Memory
SHF:Small:新兴非易失性存储器的数据结构和事务
- 批准号:
1717712 - 财政年份:2017
- 资助金额:
$ 2.37万 - 项目类别:
Standard Grant
XPS: FULL: Emerging Nonvolatile Memory for Analog-iterative Numerical Methods
XPS:FULL:用于模拟迭代数值方法的新兴非易失性存储器
- 批准号:
1628384 - 财政年份:2016
- 资助金额:
$ 2.37万 - 项目类别:
Standard Grant
Development of nanoionics-based nonvolatile memory using field effect transistor structure
使用场效应晶体管结构开发基于纳米离子的非易失性存储器
- 批准号:
16K17520 - 财政年份:2016
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Young Scientists (B)
Light switchable magnetic materials for nonvolatile memory applications: LI-RAM
用于非易失性存储器应用的光可切换磁性材料:LI-RAM
- 批准号:
500189-2016 - 财政年份:2016
- 资助金额:
$ 2.37万 - 项目类别:
Idea to Innovation
Nonvolatile memory devices with metallo-supramolecular polymers
具有金属超分子聚合物的非易失性存储器件
- 批准号:
24350097 - 财政年份:2012
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of advanced metal oxide materials for next generation nonvolatile memory devices
开发用于下一代非易失性存储器件的先进金属氧化物材料
- 批准号:
DP110102391 - 财政年份:2011
- 资助金额:
$ 2.37万 - 项目类别:
Discovery Projects
Development of high-performance and low-power consumption many-core microprocessors using nonvolatile memory elements
使用非易失性存储元件开发高性能、低功耗多核微处理器
- 批准号:
22760248 - 财政年份:2010
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Young Scientists (B)