Preparation of Ag-alloy top-electrode for ferrolectric films.

铁电薄膜银合金顶电极的制备。

• 批准号: 12555174
• 负责人: MASUMOTO Hiroshi
• 金额: $ 2.37万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555174/
• 关键词: ferroelectric thin film; nonvolatile memory; lead zirconate titanate; hydrogen atmosphere; Pt electrode; fatigue; Ag-alloy electrode; ferroelectricity; 耐水素特性; 銀電極

An Ag-alloy (97Ag-1Pd-2Cu in mol%) was proposed as a new top-electrode for lead zirconate titanate (PZT) films.1. The composition of the Ag-alloy was examined. The insulation resistance of the electrode has improved to the electrode of the composition which adds Pd of 0.1% or more to the pure silver. A heat-resistant, the insulation resistance, and adhesion characteristic have improved to the electrode of the composition which does Cu from 0.1 to 5% to the virgin silver.2. PZT ferroelectric thin film was prepared on the Pt/Ti/SiO_2/Si substrate by chemical solution deposition method (CSD method). Pt and the Ag-alloy top-electrode of 0.5mm in the diameter were made on this PZT thin film by the sputtering method. The obtained film was heat-treated by the oxygen and hydrogen atmosphere (N_2-4%H_2), and the following knowledge was obtained.(1) Oxygen atmosphereIt has been understood for both Pt and the Ag-alloy electrode to be able to maintain excellent ferroelectricity up to 500℃.(2) Hydrogen atmosphereIn the case of Pt top-electrode, the ferroelectricity of PZT films disappeared after annealing over 3CO℃. Exfoliations of Pt bottom-electrode from substrate were observed after annealing over 300℃.In the case of the Ag-alloy top-electrode, no chemical reaction between the Ag-alloy electrode and PZT film was observed after annealing at 400℃. The ferroelectricity of PZT film was maintain ed even after annealing at 350℃ using the Ag-alloy electrode.It is guessed that the Ag alloy electrode developed by this research can be used as new electrode for ferroelectric materials.

提出了一种银合金（97Ag-1Pd-2Cu (mol%)）作为锆钛酸铅（PZT）膜的新型顶电极。对合金的成分进行了分析。对于在纯银中添加0.1%或更多Pd的组合物的电极，该电极的绝缘电阻有所提高。该组合物的电极的耐热性、绝缘性能和粘附特性得到了改善，该组合物将铜从0.1 ~ 5%转化为纯银。2。采用化学溶液沉积法（CSD法）在Pt/Ti/SiO_2/Si衬底上制备了PZT铁电薄膜。采用溅射法在PZT薄膜上制备了直径为0.5mm的Pt和银合金顶电极。得到的薄膜在氧气和氢气气氛（N_2-4%H_2）中热处理，得到以下知识：(1)氧环境Pt和ag合金电极都能在500℃以下保持优异的铁电性。(2)在氢气气氛下，PZT薄膜在3CO℃以上退火后，铁电性消失。在300℃以上退火后，观察到Pt底电极从衬底脱落。对于ag合金顶电极，在400℃退火后，ag合金电极与PZT膜未发生化学反应。采用银合金电极对PZT薄膜进行350℃退火后，其铁电性仍保持不变。推测本研究开发的银合金电极可作为铁电材料的新型电极。

项目成果

T. Goto, T. Hirai and T. Ono: "Ir cluster films prepared by MOCVD as an electrode for a gas sensor"Mater. Res. Soc. Jpn.. 25. 225-228 (2000)

T. Goto、T. Hirai 和 T. Ono：“通过 MOCVD 制备的 Ir 簇薄膜作为气体传感器的电极”Mater。

H. Sugai, T. Iijima and H. Masumoto: "Preparation of lead titanate and PZT ultra-thin film using Langmuir-Blodgett film as precursor"Proc. 2000 12th IEEE Int. Symp. Applications of Ferroelectrics (ISAF 2000). II. 917-920 (2001)

H. Sugai、T. Iijima 和 H. Masumoto：“以 Langmuir-Blodgett 薄膜为前驱体制备钛酸铅和 PZT 超薄膜”Proc。

T. Goto, T. Ono and T. Hirai.: "Electrochemical properties of iridium-carbon nano composite films prepared by MOCVD"Scripta Mater.. 44. 1187-1190 (2001)

T. Goto、T. Ono 和 T. Hirai.：“MOCVD 制备的铱-碳纳米复合薄膜的电化学性能”Scripta Mater.. 44. 1187-1190 (2001)

T.Akashi, K.Morita, T.Hirai, H.Yamane, T.Goto: "Phase relationship in a BaO-Bi_2O_3-TiO_2 system and electrical properties of BaTiO_3 with addition of Bi_4Ti_3O_<12>"Mater. Trans. 42. 1823-1826 (2001)

T.Akashi、K.Morita、T.Hirai、H.Yamane、T.Goto：“BaO-Bi_2O_3-TiO_2 体系中的相关系以及添加 Bi_4Ti_3O_<12> 后 BaTiO_3 的电性能”材料。

T.Tohma, H.Masumoto, T.Goto: "Microstructure and dielectric properties of barium titanate film Prepared by MOCVD"Mater. Trans. 43. 2880-2884 (2002)

T.Tohma、H.Masumoto、T.Goto：“MOCVD 制备的钛酸钡薄膜的微观结构和介电性能”材料。