Low temperature preparation of nano composite thin films for titania-systems by ECR plasma CVD.

采用液源电子回旋共振（ECR）等离子体MOCVD技术，在低温条件下制备了氧化锆（ZrO_2）结晶薄膜和氧化钛纳米复合薄膜。研究了沉积条件对沉积速率、粗糙度、粘附性、组织、取向、显微组织和性能的影响。研究了其晶相、微观结构与光催化活性的关系。ECR等离子体在低温条件下制备ZrO_2和TiO_2晶化氧化物薄膜效果显著。采用MOCVD和激光烧蚀作为催化剂电极制备了Ir系和Ru系双氧化膜，并对膜的电极特性进行了研究。低温液源ECR等离子体MOCVD制备的ZrO_2和TiO_2氧化薄膜与热CVD制备的薄膜相比，具有良好的结晶膜，无裂纹。在不加热基体的情况下，成功地在聚酰胺-亚胺树脂（熔点250℃）上制备了ZrO_2和TiO_2（锐钛矿）晶体薄膜。在O_2:N_2 = 9:1、衬底温度=700℃、等离子体功率=900W条件下制备的TiO_2膜的光催化活性最高，达到38%。膜的表面形貌为颗粒状结构，表面积较大。它是锐钛矿与碳的纳米复合膜。研究了Ir系（IrO_2、SrIrO_3、BaIrO_3和CaIrO_3）和Ru系（RuO_2、SrRuO_3、BaRuO_3和CaRuO_3）双氧化外延膜的导电性能与晶体取向的关系。结果表明，双氧化膜中均存在最佳电极方向。

Crystallized Zirconia (ZrO_2) thin films and titania nano composite thin films were deposited at low temperatures by liquid source electron cyclotron resonance (ECR) plasma MOCVD. The effects of deposition condition on the deposition rate, roughness, adhesiveness, structure, orientation, microstructure and behavior were investigated. The relationship among crystalline phases, microstructure and photocatalytic activity were investigated. The ECR plasma was significantly effective to prepare crystallized oxide (ZrO_2 and TiO_2) films at low temperatures. Ir system and Ru system double oxide film were prepared using MOCVD and a laser ablation as a catalyst electrode, and the electrode characteristic of the films were clarified.1.Preparation of ZrO_2 and TiO_2 Oxide Thin FilmThe films prepared by the liquid source ECR plasma MOCVD at low temperature were good crystalline films without cracks compared with the films prepared by thermal CVD. It succeeded in preparing crystalline ZrO_2 and TiO_2 (Anatase) film on polymer resin (polyamide-imide resin, melting point: 250C) without substrate heating.2.Photocatalytic Activity of TiO_2 FilmPhotocatalytic activity of the TiO_2 film prepared at O_2:N_2 = 9:1, substrate temperature=700 C and plasma power=900W became maximum value of 38%. The surface morphology of the film was granular structure, and its surface area was large. It was nano composite film of anatase with carbon.3.Electrode Characteristic of Ir System and Ru System Double Oxide FilmsThe relation between electrical conduction property and the crystal orientation of Ir system (IrO_2,SrIrO_3,BaIrO_3 and CaIrO_3) and Ru system (RuO_2,SrRuO_3,BaRuO_3 and CaRuO_3) double oxide epitaxial films were evaluated. It was clear that the optimal direction as electrode exists in each double oxide film.