Low temperature preparation of nano composite thin films for titania-systems by ECR plasma CVD.

采用液体源电子回旋共振等离子体MOCVD技术，在低温下制备了ZrO_2晶化薄膜和TiO_2纳米复合薄膜。研究了沉积条件对沉积速率、粗糙度、结晶度、结构、取向、显微组织和性能的影响。研究了晶相、微观结构与光催化活性之间的关系。ECR等离子体在低温条件下对制备ZrO_2和TiO_2薄膜有显著的效果。采用MOCVD和激光烧蚀法制备了Ir系和Ru系双氧化物薄膜，并对薄膜的电极特性进行了研究。1. ZrO_2和TiO_2氧化物薄膜的制备与热CVD法相比，低温ECR等离子体MOCVD法制备的薄膜结晶良好，无裂纹。2. TiO_2薄膜的光催化活性在O_2：N_2 = 9：1、衬底温度为700 ℃、等离子体功率为900 W时，制备的TiO_2薄膜的光催化活性达到最大值，为38%。薄膜的表面形貌为颗粒状结构，比表面积较大。Ir系和Ru系双氧化物薄膜的电极特性研究了Ir系（IrO_2，SrIrO_3，BaIrO_3和CaIrO_3）和Ru系（RuO_2，SrRuO_3，BaRuO_3和CaRuO_3）双氧化物外延薄膜的导电性能与晶体取向的关系。很明显，在每个双氧化物膜中存在作为电极的最佳方向。

Crystallized Zirconia (ZrO_2) thin films and titania nano composite thin films were deposited at low temperatures by liquid source electron cyclotron resonance (ECR) plasma MOCVD. The effects of deposition condition on the deposition rate, roughness, adhesiveness, structure, orientation, microstructure and behavior were investigated. The relationship among crystalline phases, microstructure and photocatalytic activity were investigated. The ECR plasma was significantly effective to prepare crystallized oxide (ZrO_2 and TiO_2) films at low temperatures. Ir system and Ru system double oxide film were prepared using MOCVD and a laser ablation as a catalyst electrode, and the electrode characteristic of the films were clarified.1.Preparation of ZrO_2 and TiO_2 Oxide Thin FilmThe films prepared by the liquid source ECR plasma MOCVD at low temperature were good crystalline films without cracks compared with the films prepared by thermal CVD. It succeeded in preparing crystalline ZrO_2 and TiO_2 (Anatase) film on polymer resin (polyamide-imide resin, melting point: 250C) without substrate heating.2.Photocatalytic Activity of TiO_2 FilmPhotocatalytic activity of the TiO_2 film prepared at O_2:N_2 = 9:1, substrate temperature=700 C and plasma power=900W became maximum value of 38%. The surface morphology of the film was granular structure, and its surface area was large. It was nano composite film of anatase with carbon.3.Electrode Characteristic of Ir System and Ru System Double Oxide FilmsThe relation between electrical conduction property and the crystal orientation of Ir system (IrO_2,SrIrO_3,BaIrO_3 and CaIrO_3) and Ru system (RuO_2,SrRuO_3,BaRuO_3 and CaRuO_3) double oxide epitaxial films were evaluated. It was clear that the optimal direction as electrode exists in each double oxide film.