Low temperature preparation of nano composite thin films for titania-systems by ECR plasma CVD.

ECR 等离子体 CVD 低温制备二氧化钛系统纳米复合薄膜。

• 批准号: 16360321
• 负责人: MASUMOTO Hiroshi
• 金额: $ 9.54万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16360321/
• 关键词: ECR plasma; MOCVD; Titanium oxide; nano composite; low-temperature deposition; polyamide-imide resin; Rutile; photocatalytic; チタニア; 電子サイクロトロン共鳴; 化学気相析出法; ナノコンポジット膜; 有機金属錯体

Crystallized Zirconia (ZrO_2) thin films and titania nano composite thin films were deposited at low temperatures by liquid source electron cyclotron resonance (ECR) plasma MOCVD. The effects of deposition condition on the deposition rate, roughness, adhesiveness, structure, orientation, microstructure and behavior were investigated. The relationship among crystalline phases, microstructure and photocatalytic activity were investigated. The ECR plasma was significantly effective to prepare crystallized oxide (ZrO_2 and TiO_2) films at low temperatures. Ir system and Ru system double oxide film were prepared using MOCVD and a laser ablation as a catalyst electrode, and the electrode characteristic of the films were clarified.1.Preparation of ZrO_2 and TiO_2 Oxide Thin FilmThe films prepared by the liquid source ECR plasma MOCVD at low temperature were good crystalline films without cracks compared with the films prepared by thermal CVD. It succeeded in preparing crystalline ZrO_2 and TiO_2 (Anatase) film on polymer resin (polyamide-imide resin, melting point: 250C) without substrate heating.2.Photocatalytic Activity of TiO_2 FilmPhotocatalytic activity of the TiO_2 film prepared at O_2:N_2 = 9:1, substrate temperature=700 C and plasma power=900W became maximum value of 38%. The surface morphology of the film was granular structure, and its surface area was large. It was nano composite film of anatase with carbon.3.Electrode Characteristic of Ir System and Ru System Double Oxide FilmsThe relation between electrical conduction property and the crystal orientation of Ir system (IrO_2,SrIrO_3,BaIrO_3 and CaIrO_3) and Ru system (RuO_2,SrRuO_3,BaRuO_3 and CaRuO_3) double oxide epitaxial films were evaluated. It was clear that the optimal direction as electrode exists in each double oxide film.

采用液体源电子回旋共振等离子体MOCVD技术，在低温下制备了ZrO_2晶化薄膜和TiO_2纳米复合薄膜。研究了沉积条件对沉积速率、粗糙度、结晶度、结构、取向、显微组织和性能的影响。研究了晶相、微观结构与光催化活性之间的关系。ECR等离子体在低温条件下对制备ZrO_2和TiO_2薄膜有显著的效果。采用MOCVD和激光烧蚀法制备了Ir系和Ru系双氧化物薄膜，并对薄膜的电极特性进行了研究。1. ZrO_2和TiO_2氧化物薄膜的制备与热CVD法相比，低温ECR等离子体MOCVD法制备的薄膜结晶良好，无裂纹。2. TiO_2薄膜的光催化活性在O_2：N_2 = 9：1、衬底温度为700 ℃、等离子体功率为900 W时，制备的TiO_2薄膜的光催化活性达到最大值，为38%。薄膜的表面形貌为颗粒状结构，比表面积较大。Ir系和Ru系双氧化物薄膜的电极特性研究了Ir系（IrO_2，SrIrO_3，BaIrO_3和CaIrO_3）和Ru系（RuO_2，SrRuO_3，BaRuO_3和CaRuO_3）双氧化物外延薄膜的导电性能与晶体取向的关系。很明显，在每个双氧化物膜中存在作为电极的最佳方向。

项目成果

Preparation of noble metal (Ru,Ir)-carbon nano-composites by MOCVD as catalytic electrode for oxygen sensors

MOCVD制备贵金属(Ru,Ir)-碳纳米复合材料作为氧传感器催化电极

• 发表时间: 2005
• 期刊: J.Metasble and Nanocrystalline Materials 24-25
• 作者: T.Kimura;G.Suzuki;T.Goto
• 通讯作者: T.Goto

Microstructure and electrical conductivity of epitaxial SrRu0_3 thin films prepared on (001), (110) and (111) SrTiO_3 substrates by laser ablation

激光烧蚀在(001)、(110)和(111)SrTiO_3衬底上外延SrRu0_3薄膜的微观结构和电导率

• 发表时间: 2007
• 期刊: Mater. Trans. 48
• 作者: A.Ito;H.Masumoto;T.Goto
• 通讯作者: T.Goto

Preparation of calcium phosphate films by radiofrequeency magnetron sputtering

射频磁控溅射制备磷酸钙薄膜

• 发表时间: 2005
• 期刊: Mater.Trans. 46・10
• 作者: T.Narushima;K.Ueda;T.Goto;H.Masumoto;T.Katsube;H.Kawamura;C.Ouchi;Y.Iguchi
• 通讯作者: Y.Iguchi

High-speed deposition of yttria-stabilized zirconia and titatnia films by laser chemical vapor deposition

激光化学气相沉积高速沉积氧化钇稳定氧化锆和氧化钛薄膜

• 发表时间: 2006
• 期刊: J.Ceram.Soc.Jpn. 114
• 作者: A.Ito;H.Masumoto;T.Goto;T.Kimura
• 通讯作者: T.Kimura

Effect of TiO_2 solid solution on the thermal conductivity of YSZ

TiO_2固溶体对YSZ导热系数的影响

• 发表时间: 2004
• 期刊: J.Ceram.Soc.Jpn.Suppl., PacRim5 Special Issue 112・5
• 作者: T.Narushima;K.Ueda;T.Goto;H.Masumoto;T.Katsube;H.Kawamura;C.Ouchi;Y.Iguchi;H.Miyazaki
• 通讯作者: H.Miyazaki