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Formation of Nanostructured Si-Ge alloy Thin Film Using an Organometallic Polymer as a precursor and the Optical and Electrical Properties

以有机金属聚合物为前驱体的纳米结构硅锗合金薄膜的形成及其光学和电学性能

基本信息

批准号：
13650942
负责人：
WATANABE Akira
金额：
$ 1.86万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650942/
关键词：
organometaric polymer precursor Si-Ge alloy nanostructure

项目摘要

In this study, our purpose is the formation of the nanostructured silicon-germanium (Si-Ge) alloy films using organosilicon and germanium nanocluster as precursors. Such Si-Ge alloy films are expected to show unique optical and electrical properties owing to the nanostructure. The organosilicon and germanium nanoclusters are organometallic polymers which have a Si and Ge duster core substituted with organic groups, respectively, and the organic groups give them the solubility to common organic solvents. The layered film consisting of organosilicon and organogermanium nanocluster can be prepared by spin-coating technique due to the solubility. The block copolymerization of organosilicon and organogermanium monomers also gave the nanostrucured Si-Ge alloy polymers. The Raman spectra of them shows characteristic bands assigned to the vibrations of Si-Si, Si- Ge and Ge-Ge bonds. The compositions of the Si-Ge copolymers corresponded to the monomer feed compositions of organosilicon and Orga … More nogermanium monomers. Inorganic thin films of Si-Ge alloys were prepared by the combination of organosilicon nanocluster, organogermanium nanocluster and Si-Ge block copolymers. The conversion of the organometalic polymers into inorganic films were carried out by using laser-induced pyrolysis technique. The organogermanium nanocluster film was easily converted into microcryatalline Ge (μc-Ge) film by the irradiation of an Ar ion laser, where laser beam was focused on the precursor film by using an objective lens. The laser beam scan using x-y-z stage controller gave a micropattern of μc-Ge with a resolution of ca.1μm. On the other hand, the formation of inorganic film from the organosiliconl nanocluster needs the irradiation of a pulsed laser which have larger energy density. The formation of Si-Ge alloy film with a nanostructure can be achieved by the laser-induced pyrolysis of the layered film of organosilicon and organogermanium nanoclusters. /organosilicon nanocluster layered film providers a novel method to form a Si-Ge alloy. Less

在本研究中，我们的目的是以有机硅和锗纳米团簇为前驱体，形成纳米结构的硅-锗(Si-Ge)合金薄膜。由于这种纳米结构，这种硅-锗合金薄膜有望表现出独特的光学和电学性能。有机硅和锗纳米团簇是以有机基团分别取代硅和锗的金属有机聚合物，有机基团赋予了它们在普通有机溶剂中的溶解性。由于有机硅和有机锗纳米团簇的溶解性，旋涂技术可以制备出由有机硅和有机锗纳米团簇组成的层状薄膜。有机硅和有机锗单体的嵌段共聚也得到了纳米结构的硅-锗合金聚合物。它们的拉曼光谱显示出属于Si-Si、Si-Ge和Ge-Ge键振动的特征谱带。硅-锗共聚物的组成与有机硅和有机…的单体进料组成相对应更多的锗单体。采用有机硅纳米团簇、有机锗纳米团簇和硅-锗嵌段共聚物复合的方法制备了硅-锗合金无机薄膜。利用激光诱导热解技术实现了有机金属聚合物向无机薄膜的转化。利用Ar离子激光将激光聚焦在前驱体薄膜上，使有机Ge纳米团簇薄膜容易转变为微晶Ge(μc-Ge)薄膜。采用x-y-z级控制器的激光扫描得到了μc-Ge的微图形，分辨率约为1μm。另一方面，有机硅纳米团簇形成无机薄膜需要更高能量密度的脉冲激光照射。激光诱导热解有机硅和有机锗纳米团簇的层状薄膜可以形成具有纳米结构的Si-Ge合金薄膜。/有机硅纳米团簇层状薄膜为形成硅-锗合金提供了一种新的方法。较少