Formation of Nanostructured Si-Ge alloy Thin Film Using an Organometallic Polymer as a precursor and the Optical and Electrical Properties
Formation of Nanostructured Si-Ge alloy Thin Film Using an Organometallic Polymer as a precursor and the Optical and Electrical Properties
批准号:
13650942
负责人:
WATANABE Akira
金额:
$1.86万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2002
中文摘要
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英文摘要
In this study, our purpose is the formation of the nanostructured silicon-germanium (Si-Ge) alloy films using organosilicon and germanium nanocluster as precursors. Such Si-Ge alloy films are expected to show unique optical and electrical properties owing to the nanostructure. The organosilicon and germanium nanoclusters are organometallic polymers which have a Si and Ge duster core substituted with organic groups, respectively, and the organic groups give them the solubility to common organic solvents. The layered film consisting of organosilicon and organogermanium nanocluster can be prepared by spin-coating technique due to the solubility. The block copolymerization of organosilicon and organogermanium monomers also gave the nanostrucured Si-Ge alloy polymers. The Raman spectra of them shows characteristic bands assigned to the vibrations of Si-Si, Si- Ge and Ge-Ge bonds. The compositions of the Si-Ge copolymers corresponded to the monomer feed compositions of organosilicon and Orga … More nogermanium monomers. Inorganic thin films of Si-Ge alloys were prepared by the combination of organosilicon nanocluster, organogermanium nanocluster and Si-Ge block copolymers. The conversion of the organometalic polymers into inorganic films were carried out by using laser-induced pyrolysis technique. The organogermanium nanocluster film was easily converted into microcryatalline Ge (μc-Ge) film by the irradiation of an Ar ion laser, where laser beam was focused on the precursor film by using an objective lens. The laser beam scan using x-y-z stage controller gave a micropattern of μc-Ge with a resolution of ca.1μm. On the other hand, the formation of inorganic film from the organosiliconl nanocluster needs the irradiation of a pulsed laser which have larger energy density. The formation of Si-Ge alloy film with a nanostructure can be achieved by the laser-induced pyrolysis of the layered film of organosilicon and organogermanium nanoclusters. /organosilicon nanocluster layered film providers a novel method to form a Si-Ge alloy. Less
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Akira WATANABE: "Origin of Broad Visible Emission from Branched Polysilane and Polygermane Chains"Jpn J. Appl. Phys.. 40. 6457-6463 (2001)
Akira WATANABE:“来自支化聚硅烷和聚锗烷链的广泛可见光发射的起源”Jpn J. Appl。
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Akira WATANABE: "Dynamics of the Excited State of Polysilane Dendrimers : Origin of the Broad Visible Emission of Branched Silicon Chains"J. Phys. Chem. A. 26. 6436-6442 (2001)
Akira WATANABE:“聚硅烷树枝状聚合物的激发态动力学:支化硅链的广泛可见发射的起源”J。
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A.Watanabe: "Silicon-Germanium Alloys Prepared by the Heat-Treatment of Silicon Substrate Spin-Coated with Prgano-Soluble Germanium Cluster"Materials Letters. 89. 89-94 (2001)
A.Watanabe:“通过旋涂硅基可溶性锗簇的热处理制备硅锗合金”材料快报。
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A.Watanabe, M.Unno, F.Hojo, and T.Miwa: "Electrical Properties of tert-Butyl-Substituted Germanium Cluster"Chem.Lett.. 1092-1093 (2001)
A.Watanabe、M.Unno、F.Hojo 和 T.Miwa:“叔丁基取代的锗簇的电特性”Chem.Lett.. 1092-1093 (2001)
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Akira WATANABE: "Spatially Selective Formation of Microcrystalline Germanium by Laser-Induced Pyrolysis of Organogermanium nanocluster"Chem.Left.. 662-663 (2002)
Akira WATANABE:“通过激光诱导热解有机锗纳米团簇空间选择性形成微晶锗”Chem.Left.. 662-663 (2002)
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