Formation of Nanostructured Si-Ge alloy Thin Film Using an Organometallic Polymer as a precursor and the Optical and Electrical Properties

在本研究中，我们的目的是利用有机硅和锗纳米团簇作为前驱体，形成纳米结构的硅锗（Si-Ge）合金薄膜。由于其纳米结构，这种硅锗合金薄膜有望表现出独特的光学和电学性能。有机硅和锗纳米团簇是一种有机金属聚合物，它们的硅和锗粉尘芯分别被有机基团取代，有机基团使它们具有对普通有机溶剂的溶解度。由于有机硅和有机锗纳米团簇的溶解性，可以采用自旋涂覆技术制备由有机硅和有机锗纳米团簇组成的层状薄膜。有机硅和有机锗单体的嵌段共聚也得到了纳米结构的硅锗合金聚合物。它们的拉曼光谱显示了Si-Si、Si- Ge和Ge-Ge键振动的特征带。硅锗共聚物的组成与有机硅和有机锗单体的组成一致。采用有机硅纳米团簇、有机锗纳米团簇和硅锗嵌段共聚物相结合的方法制备了硅锗合金无机薄膜。采用激光诱导热解技术将有机金属聚合物转化为无机薄膜。在氩离子激光的照射下，利用物镜将激光束聚焦在前驱体膜上，将有机锗纳米团簇膜转化为微晶锗（μc-Ge）薄膜。利用x-y-z级控制器进行激光束扫描，得到μc-Ge微图，分辨率约为0.1 μm。另一方面，有机硅纳米团簇形成无机薄膜需要能量密度较大的脉冲激光照射。通过激光诱导热解有机硅和有机锗纳米团簇的层状薄膜，可以形成具有纳米结构的硅锗合金薄膜。/有机硅纳米团簇层状薄膜提供了一种形成硅锗合金的新方法。少

In this study, our purpose is the formation of the nanostructured silicon-germanium (Si-Ge) alloy films using organosilicon and germanium nanocluster as precursors. Such Si-Ge alloy films are expected to show unique optical and electrical properties owing to the nanostructure. The organosilicon and germanium nanoclusters are organometallic polymers which have a Si and Ge duster core substituted with organic groups, respectively, and the organic groups give them the solubility to common organic solvents. The layered film consisting of organosilicon and organogermanium nanocluster can be prepared by spin-coating technique due to the solubility. The block copolymerization of organosilicon and organogermanium monomers also gave the nanostrucured Si-Ge alloy polymers. The Raman spectra of them shows characteristic bands assigned to the vibrations of Si-Si, Si- Ge and Ge-Ge bonds. The compositions of the Si-Ge copolymers corresponded to the monomer feed compositions of organosilicon and Orga … More nogermanium monomers. Inorganic thin films of Si-Ge alloys were prepared by the combination of organosilicon nanocluster, organogermanium nanocluster and Si-Ge block copolymers. The conversion of the organometalic polymers into inorganic films were carried out by using laser-induced pyrolysis technique. The organogermanium nanocluster film was easily converted into microcryatalline Ge (μc-Ge) film by the irradiation of an Ar ion laser, where laser beam was focused on the precursor film by using an objective lens. The laser beam scan using x-y-z stage controller gave a micropattern of μc-Ge with a resolution of ca.1μm. On the other hand, the formation of inorganic film from the organosiliconl nanocluster needs the irradiation of a pulsed laser which have larger energy density. The formation of Si-Ge alloy film with a nanostructure can be achieved by the laser-induced pyrolysis of the layered film of organosilicon and organogermanium nanoclusters. /organosilicon nanocluster layered film providers a novel method to form a Si-Ge alloy. Less