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Realization of dislocation-free epitaxy using nanochannel epitaxy

利用纳米通道外延实现无位错外延

基本信息

批准号：
14350172
负责人：
NARITSUKA Shigeya
金额：
$ 9.6万
依托单位：
Meijo University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2005
项目状态：
已结题

项目摘要

In highly mismatched heteroepitaxy, dislocation-free layer can be grown in case the layer is laterally grown from an extremely narrow line opening cut in a selective growth mask. It is because the residual stress should be reduced below the threshold for the generation of dislocations with the help of the 3-dimentional structure shaped by the narrow opening. The new method of lateral growth with the extremely narrow channel was named as "nanochannel epitaxy (NCE)" and set as the main target of this research project.The following items should be addressed to fabricate a narrow opening with nanometer size and to perform NCE :1)Development of nano-lithographic technique using scanning tunnel microscopy (STM),2)Development of lateral growth technique performed by molecular beam epitaxy (MBE).The following themes were also studied in the research project,3)Droplet epitaxy of nano structures, e.g.quantum dots,4)Fabrication of vertical-cavity surface-emitting laser (VCSEL) using molecular bea … More m epitaxy in situ reflectance monitor.Consequently, the following results were obtained :1)STM lithography was realized on an oxide on (001)GaAs substrates, on an native and thermal oxides on (111)Si substrates. The lithography conditions were optimized and the mechanism for nano-lithography were studied.2)Beam induced lateral epitaxy (BILE), which enables a lateral growth using MBE, was studied. BILE of GaAs layer was performed on (111)GaAs substrates. BILE was also applied on the lateral growth of GaAs layer on (111)Si substrates and, consequently, dislocation-free areas of GaAs were successfully grown on the substrates.3)Importance of GaN-related materials and the fine matching between droplet epitaxy and NCE led us to the study on droplet epitaxy of GaN dots. As a result, high density (10^<11> cm^<-2>) and small sized (10nm in diameter) GaN dots were successfully fabricated and the effect of annealing on the degree of the nitridation was also ascertained.4)A VCSEL was fabricated using an in situ reflectance monitor by MBE. Both the center wavelength of the stop band of the distributed Bragg reflector (DBR) and the resonant wavelength of the optical cavity were successfully controlled using the monitor. The desirable laser performance of the VCSEL fabricated from the wafer indicates marked increases in the controllability and reproducibility of growth with the aid of the in situ reflectance monitor. Less

在高度失配的异质外延中，如果层从选择性生长掩模中切割的极窄的线开口横向生长，则可以生长无位错层。这是因为在窄开口形成的三维结构的帮助下，残余应力应被降低到位错产生的阈值以下。本研究课题的主要目标是将横向生长极窄沟道的新方法命名为“纳米沟道外延（NCE）”。为了制作纳米尺寸的窄开口并进行NCE，需要解决以下问题：1）利用扫描隧道显微镜（STM）发展纳米光刻技术，2）利用分子束外延（MBE）发展横向生长技术。本研究项目还研究了以下主题：3）纳米结构的液滴外延，4）利用分子束制作垂直腔面发射激光器（VCSEL） ...更多信息 1）在（001）GaAs衬底上的氧化物、（111）Si衬底上的自然氧化物和热氧化物上实现了STM光刻。优化了光刻工艺条件，并对纳米光刻机理进行了研究。2）研究了利用分子束外延实现横向生长的束诱导横向外延技术。在（111）GaAs衬底上进行了GaAs层的BILE。BILE也被应用于GaAs层在（111）Si衬底上的横向生长，并因此在衬底上成功地生长了GaAs的无位错区域。3）GaN相关材料的重要性以及液滴外延和NCE之间的良好匹配导致了我们对GaN点的液滴外延的研究。结果表明，成功地制备出了高密度（10 μ <11>cm ~ 2<-2>）、小尺寸（直径10 nm）的GaN量子点，并研究了退火对GaN量子点氮化程度的影响。4）利用分子束外延（MBE）原位反射监测技术制备了VCSEL。该监控器成功地控制了分布式布拉格反射器（DBR）的阻带中心波长和光腔的谐振波长。从晶片制造的VCSEL的理想的激光性能表明，在原位反射率监测器的帮助下，生长的可控性和再现性显着增加。少