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Fabrication of VCSEL on dislocation free GaAs epitaxial layer grown on Si substrate

在 Si 衬底上生长的无位错 GaAs 外延层上制造 VCSEL

基本信息

批准号：
12555096
负责人：
NARITSUKA Shigeya
金额：
$ 8.64万
依托单位：
Meijo University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

"Opto-Electronic Integrated Circuit (OEIC)" is a key device in future information and communications society. Besides electronic signal processing, it makes full use of optoelectronics information processing technology. In order to realize the OEIC, hetero-epitaxial technology is important. For example, dislocation free layer is essential to realize a long lifetime laser as light source. However, dislocation density of GaAs grown on Si is an order of 10^6 cm^<-2> now and is still too high.In order to overcome the above problems and to grow dislocation free crystals, we proposed "microchannel epitaxy (MCE)". In MCE, the information of crystal of substrate is transmitted through the narrow window ("microchannel"), but the information of defects in the substrate is cut off, and reduction of dislocation density can be realized. In this research subject, we grew dislocation free GaAs epitaxial layer on Si substrate and tried to fabricate Vertical Cavity Surface Emitting Laser (VCSEL). Through this research, the following outcome was rewarded.1. A high-performance laser with gain-guided structure was realized on Si substrate. Though the laser was operated only by a pulsed current, the performance of the laser was found no less inferior than that of the laser fabricated on GaAs substrate.2. Incorporation mechanism of oxygen into AlGaAs layers was investigated, because reduction of oxygen impurity is mandatory for the improvement of laser characteristics.3. The performance of the laser was found strongly related to the concentration of oxygen, and it was experimentally confirmed that reduction of oxygen concentration is essential to decrease the threshold current density.4. VCSEL with oxide-confinement structure was fabricated on GaAs substrate and it showed a high-grade performance of laser operation.5. "Oxide block effect" was also tried to utilize in order to improve the flexibility of VCSEL processing.

光电集成电路是未来信息通信社会的关键器件。除了电子信号处理外，它还充分利用了光电子信息处理技术。为了实现OEIC，异质外延技术是重要的。例如，位错自由层对于实现作为光源的长寿命激光器至关重要。然而，目前在Si衬底上生长的GaAs晶体位错密度高达10^6cm ~ 3量级<-2>，而且仍然很高，为了克服上述问题，生长出无位错的GaAs晶体，我们提出了“微通道外延（MCE）"。在MCE中，衬底晶体的信息通过窄窗口（“微通道”）传输，但衬底中缺陷的信息被切断，可以实现位错密度的降低。本课题在硅衬底上生长无位错GaAs外延层，并尝试制作垂直腔面发射激光器（VCSEL）。通过本研究，获得了以下成果：1.在硅衬底上实现了一种高性能的增益引导结构激光器。虽然激光器仅由脉冲电流操作，但发现激光器的性能并不比GaAs衬底上制造的激光器差.研究了氧在AlGaAs层中的掺入机理，因为氧杂质的减少是提高激光器性能的必要条件.激光器的性能与氧浓度密切相关，实验证实降低氧浓度对降低阈值电流密度至关重要.在GaAs衬底上制备了氧化物限制结构的VCSEL，并显示出良好的激光性能.为了提高VCSEL加工的灵活性，还尝试利用“氧化物阻挡效应”。