Approach from crystal growth to overcome limits of Si integrated circuits

为了在Si衬底上制造III-V沟道MOSFET或gan基LED，研究了低角度入射微沟道外延（LAIMCE）。利用分子束外延可以大大减少横向生长区域的位错。利用金属-有机分子束外延技术，成功地生长出了直径超过4 μ m的平面氮化镓。虽然在GaN模板衬底中存在大量的位错（最大为10的10次方/平方厘米），但TEM未观察到侧向生长区域的位错或缺陷。此外，还研究了用于选择性生长的掩膜材料或其他重要的LAIMCE基础技术。

In order to fabricate III-V channel MOSFET or GaN-based LED on Si substrates, low-angle incidence microchannel epitaxy (LAIMCE) was investigated. LAIMCE is useful to greatly reduce dislocations in the laterally grown areas using molecular beam epitaxy. A lateral growth of a-plane GaN more than 4um-wide was successfully grown by metal-organic molecular beam epitaxy using LAIMCE. No dislocation or defect was observed in the laterally grown area by TEM though a large number of dislocations, as large as 10 to the 10th power per square cm, exists in the GaN template substrate. Mask materials for selective growth or other important fundamental technologies for LAIMCE were also investigated.