MOCVD Growth of InN using ArF Excier Laser
使用 ArF Excier Laser 进行 InN 的 MOCVD 生长
基本信息
- 批准号:14550296
- 负责人:
- 金额:$ 1.6万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2002
- 资助国家:日本
- 起止时间:2002 至 2003
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The MOCVD growth technique using an ArF excier laser (LA-MOCVD) has been developed as a new potential approach to obtain high qiial ity InN film.This growth technique enables deposition over a wide range of growth temperatures, ranging from room temperature (RT) to a very high temperature (700℃).Selective area growth of InN has been obtained at low growth temperature by radiating the laser beam in a selected area on the substrate surface.The technique provides a InN growth rate of wore than 0.5μm/h using a very little amount (〜100 sccm) of NH3 flow. Single crystalline InN films with good crystalline quality and excellent surface morphology have been successfully grown.The electrical properties of the LA-MOCVD grown InN films are still found to be poor compared to the recently reported good results.Important evidences as to what species is responsible for poor electrical properties in the grown InN are clarified.Effort has been made for determining the actual band gap energy of InN.The causes of the significant variation in the band gap value of InN have been clearly studied.Oxygen contamination in the InN grown film has been found to be a cause of a larger band gap absorption energy value even in the case of single crystalline film.In low temperature grown films, oxygen incorporation was significantly enhanced and seemed to exist as an alloy, which caused a larger absorption edge.Whereas, in films grown at higher temperatures, oxygen existed as a donor and caused a larger absorption edge due to a Burstein-Moss shift.This evaluation enables the conclusion that the actual optical band gap energy of InN is about 0.7 eV.
ArF准分子激光MOCVD生长技术(LA-MOCVD)是一种获得高质量InN薄膜的新方法,这种生长技术可以在较宽的生长温度范围内沉积,从室温(RT)到极高温度(700℃)通过在衬底表面上的选定区域中辐射激光束,在低生长温度下获得了InN的选择性区域生长。使用非常少量的NH3流(约100 sccm),磨损小于0.5μm/h。成功地生长出了结晶质量好、表面形貌好的单晶InN薄膜,并对薄膜的电学性能进行了测试。MOCVD生长的InN薄膜与最近报道的良好结果相比仍然很差。阐明了InN薄膜电学性能差的主要原因。对InN的实际带隙能量进行了测定。讨论了InN薄膜电学性能差的原因InN的带隙值的显著变化已经被清楚地研究。已经发现,即使在单晶膜的情况下,InN生长膜中的氧污染也是较大的带隙吸收能量值的原因。在低温生长的膜中,氧的掺入显著增强并且似乎作为合金存在,这导致较大的吸收边缘。然而,在较高温度下生长的膜中,氧作为施主存在,并由于Burstein-Moss位移而引起较大的吸收边,从而得出InN的实际光学带隙能量约为0.7eV的结论。
项目成果
期刊论文数量(11)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
A.G.Bhuiyan, T.Tanaka, K.Kasashima, A.Hashimoto, A.Yamamoto: "Growth and characterization of epitaxial InN films on sapphire substrate by an ArF excimer laser-assisted metalorganic vapor-phase epitaxy (LA-MOVPE)"Japanese Journal of Applied Physics. 42. 72
A.G.Bhuiyan、T.Tanaka、K.Kasashima、A.Hashimoto、A.Yamamoto:“通过 ArF 准分子激光辅助金属有机气相外延 (LA-MOVPE) 在蓝宝石衬底上生长和表征外延 InN 薄膜”日本期刊
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A.G.Bhuiyan: "Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy"Applied Physics Letters. 82. 4788-4790 (2003)
A.G.Bhuiyan:“使用不同技术生长的吸收边在 0.7 至 2 eV 之间的单晶 InN 薄膜以及实际带隙能量的证据”《应用物理快报》。
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K.Sugita: "Photoluminescence and optical absorption edge for MOVPE-grown InN"physica status solidi (b). 240. 421-424 (2003)
K.Sugita:“MOVPE 生长的 InN 的光致发光和光学吸收边缘”物理状态固体 (b)。
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V.Yu.Davydov: "Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys"physica status solidi (b). 240. 425-428 (2003)
V.Yu.Davydov:“六方 InN 和富 InGaN 合金的光致发光和拉曼研究”物理状态固体 (b)。
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A.G.Bhuiyan, K.Sugita, K.Kasashima, A.Hashimoto, A.Yamamoto, V.Yu.Davydov: "Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy"Applied Physics Letters. 83.
A.G.Bhuiyan、K.Sugita、K.Kasashima、A.Hashimoto、A.Yamamoto、V.Yu.Davydov:“使用不同技术生长的吸收边在 0.7 至 2 eV 之间的单晶 InN 薄膜以及实际能带的证据
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YAMAMOTO Akio其他文献
YAMAMOTO Akio的其他文献
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{{ truncateString('YAMAMOTO Akio', 18)}}的其他基金
Study on MOCVD growth of InN-based semiconductors using NH3 decomposition catalysts
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- 批准号:
24560370 - 财政年份:2012
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Study on Tactile Display Technologies to Render Human Skin Feelings
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20680005 - 财政年份:2008
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A Study on Realization of Electrostatic Motors that are Applicable to Experiments for Fundamental Science Performed within Special Environments
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16078203 - 财政年份:2004
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Fundamental study for development of novel catalytic reactions by transitionmetal complexes involving carbon-oxygen bond cleavage or formation steps
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10450346 - 财政年份:1998
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Study on electrochemical etching of nitride semiconductors
氮化物半导体电化学刻蚀研究
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09650350 - 财政年份:1997
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Study on bulk crystal growth for nitide semiconductors
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09555097 - 财政年份:1997
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08555231 - 财政年份:1996
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Study on thin-film growth and solar-cell application on InN
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06650360 - 财政年份:1994
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Catalysis of Reactive Organometallics
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05236106 - 财政年份:1993
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涉及过渡金属醇盐和硫醇盐配合物作为中间体的有机合成反应
- 批准号:
63470079 - 财政年份:1988
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