Study of High-Performance Blue Semiconductor Lasers Based on Localized Excitons

基于局域激子的高性能蓝光半导体激光器研究

• 批准号: 04402032
• 负责人: SUEMUNE Ikuo
• 金额: $ 17.6万
• 依托单位: Hokkaido University (1993-1994)Hiroshima University (1992)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (A)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-04402032/
• 关键词: Blue Laser; II-VI Semiconductor; Exciton; Superlattice; Atomic Force Microscope; ΙΙ-VΙ半導体; II-VI半導体

Three-dimensional quantum confinement of excitons increases exciton binding energies and oscillator strengths of excitons. This has a possibility of enhanced optical gains for high-performance blue semiconductor lasers. We have observed three-dimensionally quantum confined exciton states formed by well-barrier interface fluctuations in superlattices, and have proposed to use these localized exciton states for realizing high-performance blue semiconductor lasers.This work consists of three parts. (1) Optical characterization of heterointerfaces and study of stimulated emission from localized exciton states with photopumping. Sharp heterointerfaces with one-mono-layr flatness(terraced structure) was observed in ZnSe/ZnSSe superlattices grown by MOVPE.A clear exiton absorption peak was observed from the terrace region with the lower energy. An excitonic stiumulated emission from the localized states was observed. (2) Development of characterization method of heterointerfaces with atomic force microscope for the purpose of studying the atomic arrangement at the heterointerfaces. The capability of discriminating semiconductors was demonstrated with a multi-probe method. (3) p-Type doping with metalorganic vapor phase epitaxy (MOVPE).p-Type conduction up to the acceptor concentration of mid 10^<16>cm^<-3> and light emission with current injection in pn heterojunction diodes were demonstrated.

激子的三维量子限制增加了激子的结合能和激子的振子强度。这有可能提高高性能蓝色半导体激光器的光学增益。我们在超晶格中观察到由阱势垒界面涨落形成的三维量子局域激子态，并提出利用这些局域激子态实现高性能蓝光半导体激光器。(1)异质界面的光学特性和局域激子态受激辐射的泵浦研究。在MOVPE生长的ZnSe/ZnSSe超晶格中观察到了尖锐的单层平坦异质界面（台阶结构），在能量较低的台阶区域观察到了清晰的激子吸收峰。从局域态观察到激子受激发射。(2)发展异质界面原子力显微镜表征方法，以研究异质界面原子排列。用多探针法验证了该方法对半导体的鉴别能力。(3)用金属有机物气相外延（MOVPE）进行p型掺杂，在受主浓度为10 ~ 10 cm ~ 3时实现了p型导电<16><-3>，并在pn异质结二极管中实现了电流注入发光。

项目成果

G.Satoh: "MOMBE Growth of ZnSe with New Zn and Se Precursers without Precracking" J.Cryst.Growth. (印刷中).

G.Satoh：“使用新的 Zn 和 Se 前体进行 ZnSe 的 MOMBE 生长，无需预裂纹”J.Cryst.Growth（正在印刷中）。

I.Suemune, K.Nakanishi, Y.Fujii, Y.Kuroda, M.Fujimoto and M.Yamanishi: ""Photopumped ZnSe/ZnSSe Blue Semiconductor Lasers and Theoretical Calculation of Optical Gain"" J.Cryst.Growth. Vol.117. 1068-1072 (1992)

I.Suemune、K.Nakanishi、Y.Fujii、Y.Kuroda、M.Fujimoto 和 M.Yamanishi：“光泵浦 ZnSe/ZnSSe 蓝色半导体激光器和光学增益的理论计算”J.Cryst.Growth。

Y.Fujii, I.Suemune, Y.Kuroda, M.Fujimoto and M.Yamanishi: ""Lasing Properties and Lasing Mechanism in a Multiple ZnSe/ZnSSe Quantum Well Heterostructure"" Jpn.J.Appl.Phys.Vol.31, No.6A. L692-L695 (1992)

Y.Fujii、I.Suemune、Y.Kuroda、M.Fujimoto 和 M.Yamanishi：“多 ZnSe/ZnSSe 量子阱异质结构中的激光特性和激光机制”Jpn.J.Appl.Phys.Vol.31，

M.Dabbicco, R.Cingolani, M.Ferrara, I.Suemune, and Y.Kuroda: ""Room Temperature Stimulated Emission in Optically Pumped Narrow ZnSe/ZnS_XSe_<1-X> Multiple Quantum-Well Structures"" J.Appl.Phys.Vol.72, No.10. 4969-4971 (1992)

M.Dabbicco、R.Cingolani、M.Ferrara、I.Suemune 和 Y.Kuroda：“光泵浦窄 ZnSe/ZnS_XSe_<1-X> 多量子阱结构中的室温受激发射”J.Appl。

M.Dabbicco: "Radiative recombination processes in ZnSe/ZnSxSe_<1-X> Multiple Quantum Well Structures" Physica B. 185. 352-356 (1993)

M.Dabbicco：“ZnSe/ZnSxSe_<1-X> 多量子阱结构中的辐射复合过程”Physica B. 185. 352-356 (1993)