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Research on Blue Semiconductor Lasers Based on MOCVD

基于MOCVD的蓝光半导体激光器研究

基本信息

批准号：
07555094
负责人：
SUEMUNE Ikuo
金额：
$ 7.1万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555094/
关键词：
blue semiconductor lasers MOCVD p-type conductivity MOMBE Nitrogen plasma band offset ハンド不連続

项目摘要

Realization of blue semiconductor lasers is highly requested for high-density data storage and for full-color displays. II-VI semiconductors and GaN-based widegap semiconductors are actively studied for this purpose. This project was performed to establish the basis for realizing such blue lasers based on the II-VI semiconductors. MOCVD is the key technology for mass production of optical devices, but the p-type doping in ZnSe based heterostructures is the remaining serious problem. We have analyzed the doping problem with an amphoteric native defect model and could give reasonable interpretation to the reported measurements. From this result, we found the growth temperature can be one of the key factor for realizing higher p-type doping, which is also consistent with the existing reports with different growth methods. We also demonstrated a new doping method based on the periodic submonolayr insertion of ZnTe : Li, and the net acceptor concentration above 1x10^<18>cm^<-3> could be realized in ZnSe. Although ZnTe is highly mismatched to ZnSe and misfit dislocations may be induced, the similar scheme of doping GaAs : Zn in ZnSe is also effective for this problem. From these results, the doping issue for the MOCVD growth of II-VI blue semiconductor lasers will be cleared.Increase of the band offset in II-VI heterostructures is another key issue to prevent leakage currents in laser diodes. For this purpose, we proposed the use of short period MgS/ZnSe superlattices and demonstrated the high barrier height with photoluminescence and XPS measurements. Self-organized dot formation was also demonstrated, which will reduce the threshold current for the laser operations. By the combination of these fruitful results in this project, realization of high-performance blue semiconductor lasers can be expected.

实现蓝色半导体激光器是高密度数据存储和全色显示的高要求。II-VI族半导体和GaN基宽禁带半导体正为此目的积极研究。该项目旨在为实现基于II-VI族半导体的蓝色激光器奠定基础。MOCVD是大规模生产光学器件的关键技术，但ZnSe基异质结的p型掺杂是目前存在的严重问题。我们用两性本征缺陷模型分析了掺杂问题，并对报道的测量结果给出了合理的解释。从这一结果中，我们发现生长温度可以是实现更高的p型掺杂的关键因素之一，这也与现有的报道与不同的生长方法相一致。我们还展示了一种新的掺杂方法，基于ZnTe：Li的周期性亚单层插入，并且可以在ZnSe中实现超过1 × 10 ~（-4）cm ~ 3的净受主浓度<18><-3>。虽然ZnTe与ZnSe高度失配，并且可能诱发失配位错，但是在ZnSe中掺杂GaAs：Zn的类似方案对于该问题也是有效的。这些结果将有助于解决MOCVD生长II-VI族蓝光半导体激光器的掺杂问题，增加II-VI族异质结的能带偏移是防止激光二极管漏电流的另一个关键问题。为此，我们提出了使用短周期的MgS/ZnSe超晶格，并证明了光致发光和XPS测量的高势垒高度。自组织点的形成也被证明，这将降低阈值电流的激光器操作。通过本项目的这些成果的结合，可以预期实现高性能的蓝色半导体激光器。